Over-expression of GmHAL3 modulates salt stresses tolerance in transgenic arabidopsis

Na Guo,Ming-xia Wang,Chen-chen Xue,Dong Xue,Jin-yan Xu,Hai-tang Wang,Jun-Yi Gai,Han Xing,Jin-ming Zhao;Han Xing 한국식물학회 2016 Journal of Plant Biology Vol.59 No.5

The halotolerance protein HAL3, also known as SIS2, is a yeast protein that regulates the cell cycle and tolerance to salt stress through inhibition of the Ppz1 type 1 protein phosphatase. Although the roles of HAL3 have been demonstrated during the growth, development, and stress adaptation of Arabidopsis thaliana and Nicotiana tabacum, the function of HAL3 in other plant species, including soybean (Glycine max), has not been elucidated. In this study, GmHAL3a and GmHAL3b were isolated from Glycine max, and their roles were analyzed. GmHAL3a and GmHAL3b transcripts were detected in the roots, stems, leaves and seeds, with higher levels in the roots, and were induced by sodium chloride (NaCl), lithium chloride (LiCl), sorbitol, cold and ABA treatment. Overexpression of GmHAL3a or GmHAL3b in Arabidopsis accelerated the onset of flowering and resulted in more vigorous seed germination and increased tolerance to NaCl, LiCl, and sorbitol stress in seedlings, compared with wild type (WT) and empty vector control (VC) plants. Transgenic Arabidopsis plants accumulated proline and eliminated superoxide radical (O2 −) in response to the stress. In addition, transcription levels of the stress-related genes RD22 and P5CS1 were substantially higher in transgenic Arabidopsis than in WT and VC plants. Taken together, the data indicate that GmHAL functions as a positive regulator of the response to salt, lithium cations and sorbitol stress.

Ginsengenin derivatives synthesized from 20(R)-panaxotriol: Synthesis, characterization, and antitumor activity targeting HIF-1 pathway

Guo, Hong-Yan,Xing, Yue,Sun, Yu-Qiao,Liu, Can,Xu, Qian,Shang, Fan-Fan,Zhang, Run-Hui,Jin, Xue-Jun,Chen, Fener,Lee, Jung Joon,Kang, Dongzhou,Shen, Qing-Kun,Quan, Zhe-Shan The Korean Society of Ginseng 2022 Journal of Ginseng Research Vol.46 No.6

Background: Ginseng possesses antitumor effects, and ginsenosides are considered to be one of its main active chemical components. Ginsenosides can further be hydrolyzed to generate secondary saponins, and 20(R)-panaxotriol is an important sapogenin of ginsenosides. We aimed to synthesize a new ginsengenin derivative from 20(R)-panaxotriol and investigate its antitumor activity in vivo and in vitro. Methods: Here, 20(R)-panaxotriol was selected as a precursor and was modified into its derivatives. The new products were characterized by ¹H-NMR, ¹³C-NMR and HR-MS and evaluated by molecular docking, MTT, luciferase reporter assay, western blotting, immunofluorescent staining, colony formation assay, EdU labeling and immunofluorescence, apoptosis assay, cells migration assay, transwell assay and in vivo antitumor activity assay. Results: The derivative with the best antitumor activity was identified as 6,12-dihydroxy-4,4,8,10,14-pentamethyl-17-(2,6,6-trimethyltetrahydro-2H-pyran-2-yl)hexadecahydro-1H-cyclopenta[a]phenanthren-3-yl(tert-butoxycarbonyl)glycinate (A11). The focus of this research was on the antitumor activity of the derivatives. The efficacy of the derivative A11 (IC₅₀ < 0.3 µM) was more than 100 times higher than that of 20(R)- panaxotriol (IC₅₀ > 30 µM). In addition, A11 inhibited the protein expression and nuclear accumulation of the hypoxia-inducible factor HIF-1α in HeLa cells under hypoxic conditions in a dose-dependent manner. Moreover, A11 dose-dependently inhibited the proliferation, migration, and invasion of HeLa cells, while promoting their apoptosis. Notably, the inhibition by A11 was more significant than that by 20(R)-panaxotriol (p < 0.01) in vivo. Conclusion: To our knowledge, this is the first study to report the production of derivative A11 from 20(R)-panaxotriol and its superior antitumor activity compared to its precursor. Moreover, derivative A11 can be used to further study and develop novel antitumor drugs.

A Medical Image Fusion Algorithm based on Non-subsampled Shearlet Transform and Non-negative Matrix Factorization

Chen Zhen,Xing Xiaoxue,Guo Pan,Fan Qinyin 보안공학연구지원센터 2016 International Journal of Hybrid Information Techno Vol.9 No.8

After the image decomposition with Non-subsampled Shearlet Transform (NSST), the transform coefficients have a larger redundancy. In order to reduce the redundant information, an image fusion algorithm based on NSST and non-negative matrix factorization (NMF) is introduced. The source images are decomposed with NSST into the low-frequency coefficients and the high-frequency sub-band coefficients. The low-frequency coefficients are fused based on NMF theory. The high-frequency coefficients are fused based on Regional Sum Modified-Laplacian (SML) Maximum. Finally, the inverse NSST is used to reconstruct the final fused image. The proposed algorithm can effectively remove redundant information, extract global features and capture more direction details information of multi-source image. Experiments show that the proposed algorithm has obvious advantages and the fused image quality has been greatly improved. The presented algorithm is superior to other fusion algorithms from the objective parameters.

Molecular Orbital Gating Surface-Enhanced Raman Scattering

Guo, Chenyang,Chen, Xing,Ding, Song-Yuan,Mayer, Dirk,Wang, Qingling,Zhao, Zhikai,Ni, Lifa,Liu, Haitao,Lee, Takhee,Xu, Bingqian,Xiang, Dong American Chemical Society 2018 ACS NANO Vol.12 No.11

<P>One of the promising approaches to meet the urgent demand for further device miniaturization is to create functional devices using single molecules. Although various single-molecule electronic devices have been demonstrated recently, single-molecule optical devices which use external stimulations to control the optical response of a single molecule have rarely been reported. Here, we propose and demonstrate a field-effect Raman scattering (FERS) device with a single molecule, an optical counterpart to field-effect transistors (a key component of modern electronics). With our devices, the gap size between electrodes can be precisely adjusted at subangstrom accuracy to form single molecular junctions as well as to reach the maximum performance of Raman scattering via plasmonic enhancement. Based on this maximum performance, we demonstrated that the intensity of Raman scattering can be further enhanced by an additional ∼40% if the orbitals of the molecules bridged two electrodes were shifted by a gating voltage. This finding not only provides a method to increase the sensitivity of Raman scattering beyond the limit of plasmonic enhancement, but also makes it feasible to realize addressable functional FERS devices with a gate electrode array.</P> [FIG OMISSION]</BR>

Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition

Xing Li,Hong-Liang Lu,Hong-Ping Ma,Jian-Guo Yang,Jin-Xin Chen,Wei Huang,Qixin Guo,Jijun Feng,David Wei Zhang 한국물리학회 2019 Current Applied Physics Vol.19 No.2

Thin Ga2O3 films were grown on Si (100) using trimethylgallium (TMG) and oxygen as the precursors through plasma-enhanced atomic layer deposition. The depositions were made over a temperature range of 80–250 °C with a growth per cycle of around 0.07 nm/cycle. Surface self-saturating growth was obtained with TMG pulse time ≥20 ms at a temperature of 150 °C. The root mean square surface roughness of the obtained Ga2O3 films increased from 0.1 nm to 0.3 nm with increasing the growth temperature. Moreover, the x-ray photoelectron spectroscopy analysis indicated that the obtained film was Ga-rich with the chemical oxidation states Ga3+ and Ga1+, and no carbon contamination was detected in the films after Ar+ sputtering. The electron density of films measured by x-ray reflectivity varied with the growth temperature, increasing from 4.72 to 5.80 g/cm3 . The transmittance of Ga2O3 film deposited on a quartz substrate was obtained through ultraviolet visible (UV–Vis) spectroscopy. An obvious absorption in the deep UV region was demonstrated with a wide band gap of 4.6–4.8 eV. The spectroscopic ellipsometry analysis indicated that the average refractive index of the Ga2O3 film was 1.91 at 632.8 nm and increased with the growth temperature due to the dense structure of the films. Finally, the I-V and C-V characteristics proved that the Ga2O3 films prepared in this work had a low leakage current of 7.2 × 10−11 A/cm2 at 1.0 MV/cm and a high permittivity of 11.9, suitable to be gate dielectric.

LDMOS with Variable-k Dielectric for Improved Breakdown Voltage and Specific On-resistance

Songnan Guo,Junji Cheng,Xing Bi Chen 대한전자공학회 2019 Journal of semiconductor technology and science Vol.19 No.5

A silicon-on-insulator (SOI) lateral double-diffused MOSFET (LDMOS) with variable-k dielectric is proposed, which features three-section high-k dielectrics placed over the drift region. Beneficial from the modulation, by high-k dielectrics, on electric fluxes in the drift region, the electric field strength is locally enhanced, and has a more uniform distribution along the surface of the drift region, which an increment of the breakdown voltage (BV) ascribes to. Moreover, due to the electric fluxes prefer to flow towards and through a high-k dielectric, an increase in the dose of the drift region is thus possible to reduce the specific on-resistance (Ron,sp), since the extra electric fluxes caused by those increased impurities would flow, upwards, into the high-k dielectric, and barely make contributions to the x-component of the surface electric field, which indicates that the BV would not be affected. Based on a comparison with the conventional LDMOS, the BV of the proposed LDMOS increased by 31% with a decrease of 13% in the Ron,sp. The figure of merit (FOM) increased approximately 2 times.

Ds9 was isolated encoding as OsHAP3H and its C-terminus was required for interaction with HAP2 and HAP5

Qikai Xing,Zhimin Zheng,Xiangui Zhou,Xujun Chen,Zejian Guo 한국식물학회 2015 Journal of Plant Biology Vol.58 No.1

Heading date is one of the most important agronomic traits in rice. Here, we analyzed an early flowering mutant ds9 under long day (LD) conditions and found that the early flowering phenotype was controlled by a single dominant gene. Mapping the Ds9 revealed that it was located near SSR marker RM5432 on chromosome 8, close to the known heading date-related DTH8/Ghd8 locus. Sequence analysis indicated that Ds9 was allelic to Ghd8, encoding the OsHAP3H subunit of CCAAT-box binding proteins (HAPs), and transformation of ds9 mutant with the OsHAP3H gene from wild type XS11 plants significantly increased the heading date under LD conditions. Yeast two hybrid and three hybrid assays revealed that the C-terminus of OsHAP3H is required for its interactions with OsHAP2 and OsHAP5. The data demonstrated that OsHAP3H plays a critical role as a repressor of photoperiodic flowering in rice.

β-elemene Induces Caspase-dependent Apoptosis in Human Glioma Cells in vitro through the Upregulation of Bax and Fas/FasL and Downregulation of Bcl-2

Li, Chen-Long,Chang, Liang,Guo, Lin,Zhao, Dan,Liu, Hui-Bin,Wang, Qiu-Shi,Zhang, Ping,Du, Wen-Zhong,Liu, Xing,Zhang, Hai-Tao,Liu, Yang,Zhang, Yao,Xie, Jing-Hong,Ming, Jian-Guang,Cui, Yu-Qiong,Sun, Ying Asian Pacific Journal of Cancer Prevention 2014 Asian Pacific journal of cancer prevention Vol.15 No.23

Background: ${\beta}$-elemene, extracted from herb medicine Curcuma wenyujin has potent anti-tumor effects in various cancer cell lines. However, the activity of ${\beta}$-elemene against glioma cells remains unclear. In the present study, we assessed effects of ${\beta}$-elemene on human glioma cells and explored the underlying mechanism. Materials and Methods: Human glioma U87 cells were used. Cell proliferation was determined with MTT assay and colony formation assay to detect the effect of ${\beta}$-elemene at different doses and times. Fluorescence microscopy was used to observe cell apoptosis with Hoechst 33258 staining and change of glioma apoptosis and cell cycling were analyzed by flow cytometry. Real-time quantitative PCR and Western-blotting assay were performed to investigated the influence of ${\beta}$-elemene on expression levels of Fas/FasL, caspase-3, Bcl-2 and Bax. The experiment was divided into two groups: the blank control group and ${\beta}$-elemne treatment group. Results: With increase in the concentration of ${\beta}$-elemene, cytotoxic effects were enhanced in the glioma cell line and the concentration of inhibited cell viability ($IC_{50}$) was $48.5{\mu}g/mL$ for 24h. ${\beta}$-elemene could induce cell cycle arrest in the G0/G1 phase. With Hoechst 33258 staining, apoptotic nuclear morphological changes were observed. Activation of caspase-3,-8 and -9 was increased and the pro-apoptotic factors Fas/FasL and Bax were upregulated, while the anti-apoptotic Bcl-2 was downregulated after treatment with ${\beta}$-elemene at both mRNA and protein levels. Furthermore, proliferation and colony formation by U87 cells were inhibited by ${\beta}$-elemene in a time and does-dependent manner. Conclusions: Our results indicate that ${\beta}$-elemene inhibits growth and induces apoptosis of human glioma cells in vitro. The induction of apoptosis appears to be related with the upregulation of Fas/FasL and Bax, activation of caspase-3,-8 and -9 and downregulation of Bcl-2, which then trigger major apoptotic cascades.

Static behavior of bolt connected steel-concrete composite beam without post-cast zone

Ying Xing,Yun Zhao,Qi Guo,Jin-feng Jiao,Qing-wei Chen,Ben-zhao Fu 국제구조공학회 2021 Steel and Composite Structures, An International J Vol.38 No.4

Although traditional steel-concrete composite beams have excellent structural characteristics, it cannot meet the requirement of quick assembly and repair in the engineering. This paper presents a study on static behavior of bolt connected steel-concrete composite beam without post-cast zone. A three-dimensional finite element model was developed with its accuracy and reliability validated by available experimental results. The analysis results show that in the normal service stage, the bolt is basically in the state of unidirectional stress with the loss of pretightening can be ignored. Parametric studies are presented to quantify the effects of the post-cast zone, size and position of splicing gap on the behavior of the beam. Based on the studies, suggested size of gap and installation order were proposed. It is also confirmed that optimized concrete slab in mid-span can reduce the requirement of construction accuracy.

Fatigue performance and life prediction methods research on steel tube-welded hollow spherical joint

Qi Guo,Ying Xing,Honggang Lei,Jingfeng Jiao,Qingwei Chen 국제구조공학회 2020 Steel and Composite Structures, An International J Vol.36 No.1

The grid structures with welded hollow spherical joint (WHSJ) have gained increasing popularity for use in industrial buildings with suspended cranes, and usually welded with steel tube (ST). The fatigue performance of steel tube-welded hollow spherical joint (ST-WHSJ) is however not yet well characterized, and there is little research on fatigue life prediction methods of ST-WHSJ. In this study, based on previous fatigue tests, three series of specimen fatigue data with different design parameters and stress ratios were compared, and two fatigue failure modes were revealed: failure at the weld toe of the ST and the WHSJ respectively. Then, S–N curves of nominal stress were uniformed. Furthermore, a finite element model (FEM) was validated by static test, and was introduced to assess fatigue behavior with the hot spot stress method (HSSM) and the effective notch stress method (ENSM). Both methods could provide conservative predictions, and these two methods had similar results. However, ENSM, especially when using von Mises stress, had a better fit for the series with a non- positive stress ratio. After including the welding residual stress and mean stress, analyses with the local stress method (LSM) and the critical distance method (CDM, including point method and line method) were carried out. It could be seen that the point method of CDM led to more accurate predictions than LSM, and was recommended for series with positive stress ratios.