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Preparation of nano aluminum nitride powders by polymer network method
Ning Zhang,Tingting Fu,Feiyi Yang,Hongmin Kan,Xiaoyang Wang,Haibo Long,Liuyan Wang 한양대학교 세라믹연구소 2014 Journal of Ceramic Processing Research Vol.15 No.2
In this work, aluminum nitrate (Al(NO3)3), active carbon and C12H22O11 were used as raw materials. The nano aluminum nitride powders (AlN) were synthesis by polymer network method. Aluminum nitride (AlN) exhibits high thermal conductivity, low dielectric permittivity and good electric insulativity. It has a very high synthetic temperature, however, results in a high cost. The aim of this investigation is to develop a new method of fabricating ultra-fine AlN powders to lower the synthetic temperature of AlN. The influences of different carbon sources and the synthetic temperature on fabricating AlN powders via polymer network method were investigated, and the mechanism of AlN formation was also identified. The results indicated that as using sucrose (C12H22O11) as the carbon source, the optimum synthetic process condition for fabricating ultrafine AlN powders was at 1500 °C for 2 h. Comparing with the mechanical ball-milling method, the temperature of synthesizing AlN powders was lowered about 100 °C. Furthermore, the size of as-synthesized AlN was finer from 50 nm to 80 nm.
( Jinni Hong ),( Tingting Fu ),( Weizhen Liu ),( Yu Du ),( Junmin Bu ),( Guojian Wei ),( Miao Yu ),( Yanshan Lin ),( Cunyun Min ),( Datao Lin ) 한국미생물생명공학회 2024 Journal of microbiology and biotechnology Vol.34 No.3
In this study, we aim to investigate the precise alterations in the gut microbiota during the onset and advancement of diabetic nephropathy (DN) and examine the impact of Ruminococcus gnavus (R. gnavus) on DN. Eight-week-old male KK-Ay mice were administered antibiotic cocktails for a duration of two weeks, followed by oral administration of R. gnavus for an additional eight weeks. Our study revealed significant changes in the gut microbiota during both the initiation and progression of DN. Specifically, we observed a notable increase in the abundance of Clostridia at the class level, higher levels of Lachnospirales and Oscillospirales at the order level, and a marked decrease in Clostridia_UCG-014 in DN group. Additionally, there was a significant increase in the abundance of Lachnospiraceae, Oscillospiraceae, and Ruminococcaceae at the family level. Moreover, oral administration of R. gnavus effectively aggravated kidney pathology in DN mice, accompanied by elevated levels of urea nitrogen (UN), creatinine (Cr), and urine protein. Furthermore, R. gnavus administration resulted in down-regulation of tight junction proteins such as Claudin-1, Occludin, and ZO-1, as well as increased levels of uremic toxins in urine and serum samples. Additionally, our study demonstrated that orally administered R. gnavus up-regulated the expression of inflammatory factors, including nucleotide-binding oligomerization domain-like receptor pyrin domain-containing protein 3 (NLRP3) and Interleukin (IL)-6. These changes indicated the involvement of the gut-kidney axis in DN, and R. gnavus may worsen diabetic nephropathy by affecting uremic toxin levels and promoting inflammation in DN.
Investigation of Photoelectrochemical Water Splitting for Mn-Doped In2O3 Film
Xianke Sun,Xinhe Fu,Tingting You,Qiannan Zhang,Liuyang Xu,Xiaodong Zhou,Honglei Yuan,Kuili Liu 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
Undoped and Mn-doped In 2 O 3 fi lms were prepared by radiofrequency magnetron sputtering technique. The eff ects of Mn dopingon the structural and optical properties of as-prepared fi lms were investigated using X-ray diff raction, X-ray photoelectronspectroscopy and ultraviolet–visible spectroscopy. Mn doping can enhance the intensity of (222) peak in Mn-doped In 2 O 3thin fi lm, indicating Mn dopant promotes preferred orientation of crystal growth along (222) plane. XPS analyses revealedthat the doped Mn ions exist at + 2 oxidation states, substituting for the In 3+ sites in the In 2 O 3 lattice. UV–Vis measurementsshow that the optical band gap E g decreases from 3.33 to 2.87 eV with Mn doping in In 2 O 3 , implying an increasing sp–dexchange interaction in the fi lm. Our work demonstrates a practical means to manipulate the band gap energy of In 2 O 3 thinfi lm via Mn impurity doping, and signifi cantly improves the photoelectrochemical activity.