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The Influence of Al Underlayer on the Optical and Electrical Properties of GZO/Al Thin Films
Kim, Sun-Kyung,Kim, So-Young,Kim, Seung-Hong,Jeon, Jae-Hyun,Gong, Tae-Kyung,Kim, Daeil,Choi, Dong-Hyuk,Son, Dong-Il The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.6
100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.
Effects of Electron Irradiation on the Properties of ZnO Thin Films
Kim, Seung-Hong,Kim, Sun-Kyung,Kim, So-Young,Kim, Daeil,Choi, Dae-Han,Lee, Byung-Hoon,Kim, Min-Gyu The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.4
ZnO films were deposited on glass substrates by radio frequency (RF) magnetron sputtering and exposed to intense electron beam irradiation to investigate the effects of electron irradiation on the properties of the films. Although all of the films had ZnO (002) textured structure regardless of electron irradiation, the grain sizes of the films decreased with electron irradiation. Surface roughness also depended on electron irradiation. The surface roughness varied between 2.3 and 1.6 nm, depending on the irradiation energy. Based on photoluminescence (PL) characterization, the most intense UV emission was observed from ZnO films irradiated at 900 eV. Since the intensity of UV emission is dependent upon the stoichiometric of ZnO films, we conclude that 900 eV was the optimum electron irradiation energy to achieve the best stoichiometric of ZnO films in this study.
Influence of ZnO Thickness on the Optical and Electrical Properties of GZO/ZnO Bi-layered Films
Kim, Sun-Kyung,Kim, So-Young,Kim, Seung-Hong,Jeon, Jae-Hyun,Gong, Tae-Kyung,Kim, Daeil,Yoon, Dae Young,Choi, Dong Yong The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.4
100 nm thick Ga doped ZnO (GZO) thin films were deposited with RF magnetron sputtering on polyethylene terephthalate (PET) and ZnO coated PET substrate and then the effect of the ZnO thickness on the optical and electrical properties of the GZO films was investigated. GZO single layer films had an optical transmittance of 83.7% in the visible wavelength region and a sheet resistance of $2.41{\Omega}/{\square}$, while the optical and electrical properties of the GZO/ZnO bi-layered films were influenced by the thickness of the ZnO buffer layer. GZO films with a 20 nm thick ZnO buffer layer showed a lower sheet resistance of $1.45{\Omega}/{\square}$ and an optical transmittance of 85.9%. As the thickness of ZnO buffer layer in GZO/ZnO bi-layered films increased, both the conductivity and optical transmittance in the visible wavelength region were increased. Based on the figure of merit (FOM), it can be concluded that the ZnO buffer layer effectively increases the optical and electrical performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.
Keumsun Kim,Hyunsuk Shin,Youngjae Oh,Sewon Oh,Jungyeon Won,Hyeondae Han,Yoon-Kyeong Kim,Seolah Kim,Sung-Il Oh,Mingi Lee,Daeil Kim 한국육종학회 2015 한국육종학회 심포지엄 Vol.2015 No.07
In this study, we sought to identify primary pears species and Korean native pears, without the use of morphological characteristics. In addition, this study was to establish pear DNA fingerprinting data for Korean native pears using 12 microsatellite markers, and to accurately classify a database for management of the Korean pear collection. Forty two pear accessions (7 primary pears, 5 Asian pears, 29 Korean pears, and 2 reference pears) were analyzed with twelve primers covering whole pear genome. In the present study, all pear accessions were successfully classified along with their pedigrees, and the distribution of primary pears was parallel to those of the previous taxonomic results. Korean pears were divided into 3 groups. Group I was characterized by Pyrus calleryana, and included Korean pea pears. Group II was characterized by P. pyrifolia, and was classified into 2 small groups. The first small group comprised of ‘Najucheongbae’, ‘Sunchanggulimdolbae’, ‘Andongmookbae’, ‘Andongdangsilri’, and ‘Najucheongbae’ and was presumed to be cultivars of P. pyrifolia. The second small group consisted of ‘Cheongdangrori’ and ‘Pyeongchangsuhyangri’. These two accessions were assumed to be a hybrid of P. pyrifolia and the other cultivar. Group III was characterized by P. ussuriensis. ‘Goesanhwangbae’, ‘Andongcheongsilri’, ‘Gongjucheongsilri’, and ‘Yecheoncheongbae’ were assumed to be cultivars of P. ussuriensis. Contrary to ‘Ulreungdocheongbae A’, ‘Ulreungdocheongbae B’ was classified as belonging to the P. ussuriensis group. It is possible that this is a consequence of, P. ussuriensis genes being transferred into ‘Ulreungdocheongbae B’. The result of this research reaffirmed the efficiency of a standard set of microsatellite markers and provides data, which will be useful for developing a core collection of pears.