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Gender and migration : Employment of rural migrants in South China’s factories
Chunlan GUO,Jianfa SHEN 이화여자대학교 아시아여성학센터 2016 Asian Journal of Women's Studies(AJWS) Vol.22 No.3
Drawing on rural migrants’ experiences and narratives collected through indepth fieldwork in the Pearl River Delta in 2008–2009, we discovered that rural women are more successful than men in securing factory employment. We looked at the ways in which the employment of rural migrants in South China’s factories was an outcome of the interweaving of gender, migrant status, the segmented labor market, and the hukou (household registration) system. The factories have tended to recruit women as it is believed that femininity can contribute to increasing production efficiency, creating a “safe” space for production and minimizing labor costs. At the same time, masculinity is associated with “carelessness,” “laziness,” “naughtiness,” “conflict,” “violence,” and “trouble-makers.” In addition, the identity of “migrant” has helped women break free from the traditional gender regime and strengthen their labor market participation. 透過2008及2009年全球金融海嘯對在珠江三角洲工廠就業的農民工的深入田野調查, 我們發現在女性比男性在工廠就業上更有優勢。我們研究農民工在南中國工廠的就業是如何受性別、遷移、分割勞動市場和戶口制度影響及共同建構。工廠傾向雇用女工, 因為它們相信女性特質能夠提升生產效率、創造安全的工作空間和節省生產成本。同時, 工廠內男性特質被歸類為粗心、懶惰、調皮、衝突、暴力和麻煩製造者。再者, 遷移和移民的身份幫助女性農民工從農村傳統性別角色解放, 加強她們在勞動市場的參與程度。
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Chunlan Wang,Yebo Jin,Yuqing Li,Gangying Guo,Yongle Song,Hao Huang,Aolin Wang,Han He 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.4
Amorphous InGaZnO (a-InGaZnO) thin film transistors (TFTs) with stability and low-temperature deposition are importantchallenges for their application in flexible electronics. Herein, a-InGaZnO films were successfully obtained throughout thewhole process in the room-temperature sputtering system. An intermediate nitrogen treatment a-InGaZnO film link contributedto high performance a-InGaZnO TFTs. The current switching ratio of the optimal nitrogen treatment transistor is closeto 107,the field-effect mobility (μFE) is 11.7 cm2/Vs and threshold voltage (VTH) is − 0.12 V, respectively. And the 4-daythreshold voltage offset (ΔVTH) is reduced from 12.98 to 4.92 V. The improved electrical properties may be attributed to thereduction of defect concentration and average interfacial trap density due to nitrogen occupation of oxygen vacancies (VO).
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