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YONGLING FANG,SONG XU,ZHONGYU LI,DANAN HAN,DAYONG LU 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2014 NANO Vol.9 No.3
A 1,3-bis[(3,3-dimethylindolin-2-ylidene)methyl]squaraine (ISQ) dye sensitized ZnO nanocompo-sites via two di®erent preparation methods including hydrothermal and ultrasonic sensitizationprocesses are discussed in this paper. The as-prepared composites were characterized by the X-raydi®raction (XRD), UV-Vis di®use re°ectance spectroscopy (DRS), Raman spectroscopy, andtransmission electron microscopy (TEM). Based on the XRD patterns and TEM images, the ISQ/ZnO nanocomposites still kept the characteristic peaks and the basic morphology of ZnO and ISQdye. The photocatalytic activity of ISQ/ZnO nanocomposites was investigated by degradingmethylene blue (MB) under visible-light illumination. Compared with the MB self-degradation rate,the photocatalytic activity of the ISQ/ZnO composites was enhanced remarkably. The ISQ/ZnOnanocomposites fabricated by ultrasonic sensitization method exhibited excellent photocatalyticdegradation rate, approximately 20% higher than that of the hydrothermal sensitization one.
Numerical investigation of tip clearance effects on the performance of ducted propeller
Ding Yongle,Song Baowei,Wang Peng 대한조선학회 2015 International Journal of Naval Architecture and Oc Vol.7 No.5
Tip clearance loss is a limitation of the improvement of turbomachine performance. Previous studies show the Tip clearance loss is generated by the leakage flow through the tip clearance, and is roughly linearly proportional to the gap size. This study investigates the tip clearance effects on the performance of ducted propeller. The investigation was carried out by solving the Navier-Stokes equations with the commercial Computational Fluid Dynamic (CFD) code CFX14.5. These simulations were carried out to determine the underlying mechanisms of the tip clearance effects. The calculations were performed at three different chosen advance ratios. Simulation results showed that the tip loss slope was not linearly at high advance due to the reversed pressure at the leading edge. Three type of vortical structures were observed in the tip clearance at different clearance size.
Chunlan Wang,Yebo Jin,Yuqing Li,Gangying Guo,Yongle Song,Hao Huang,Aolin Wang,Han He 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.4
Amorphous InGaZnO (a-InGaZnO) thin film transistors (TFTs) with stability and low-temperature deposition are importantchallenges for their application in flexible electronics. Herein, a-InGaZnO films were successfully obtained throughout thewhole process in the room-temperature sputtering system. An intermediate nitrogen treatment a-InGaZnO film link contributedto high performance a-InGaZnO TFTs. The current switching ratio of the optimal nitrogen treatment transistor is closeto 107,the field-effect mobility (μFE) is 11.7 cm2/Vs and threshold voltage (VTH) is − 0.12 V, respectively. And the 4-daythreshold voltage offset (ΔVTH) is reduced from 12.98 to 4.92 V. The improved electrical properties may be attributed to thereduction of defect concentration and average interfacial trap density due to nitrogen occupation of oxygen vacancies (VO).