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Chunlan Wang,Yebo Jin,Yuqing Li,Gangying Guo,Yongle Song,Hao Huang,Aolin Wang,Han He 대한금속·재료학회 2023 ELECTRONIC MATERIALS LETTERS Vol.19 No.4
Amorphous InGaZnO (a-InGaZnO) thin film transistors (TFTs) with stability and low-temperature deposition are importantchallenges for their application in flexible electronics. Herein, a-InGaZnO films were successfully obtained throughout thewhole process in the room-temperature sputtering system. An intermediate nitrogen treatment a-InGaZnO film link contributedto high performance a-InGaZnO TFTs. The current switching ratio of the optimal nitrogen treatment transistor is closeto 107,the field-effect mobility (μFE) is 11.7 cm2/Vs and threshold voltage (VTH) is − 0.12 V, respectively. And the 4-daythreshold voltage offset (ΔVTH) is reduced from 12.98 to 4.92 V. The improved electrical properties may be attributed to thereduction of defect concentration and average interfacial trap density due to nitrogen occupation of oxygen vacancies (VO).