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Jun Li,Chuanxin Huang,Yi-Zhou Fu,Jianhua Zhang,Xue-Yin Jiang,Zhi-Lin Zhang 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.1
Amorphous LaZnSnO thin films with different La doping concentrationare prepared by a combustion solution process and theelectrical performances of thin film transistors (TFTs) areinvestigated. The influence of La content on the structure, oxygenvacancies, optical and electrical performance of LaZnSnO thinfilms are investigated. At an appropriate amount of La doping(15 mol.%), LaZnSnO-TFT shows a superior electrical performanceincluding a mobility of 4.2 cm2/V s, a subthreshold swing of 0.50 V/decade and an on/off current ratio of 1.9 × 107. The highperformance LaZnSnO-TFT is attributed to the better interfacebetween SiO2 and LaZnSnO channel layer and the suppression ofoxygen vacancies by optimizing La content. It suggests that Ladoping can be a useful technique for fabricating high performancesolution-processed oxide TFTs.
Su, Yongbo,She, Yue,Huang, Qiang,Shi, Chuanxin,Li, Zhongchao,Huang, Chengfei,Piao, Xiangshu,Li, Defa Asian Australasian Association of Animal Productio 2015 Animal Bioscience Vol.28 No.12
This experiment was conducted to determine the effects of inclusion level of soybean oil (SO) and palm oil (PO) on their digestible and metabolism energy (DE and ME) contents when fed to growing pigs by difference and regression method. Sixty-six crossbred growing barrows (Duroc${\times}$Landrace${\times}$Yorkshire and weighing $38.1{\pm}2.4kg$) were randomly allotted to a $2{\times}5$ factorial arrangement involving 2 lipid sources (SO and PO), and 5 levels of lipid (2%, 4%, 6%, 8%, and 10%) as well as a basal diet composed of corn and soybean meal. The barrows were housed in individual metabolism crates to facilitate separate collection of feces and urine, and were fed the assigned test diets at 4% of initial body weight per day. A 5-d total collection of feces and urine followed a 7-d diet adaptation period. The results showed that the DE and ME contents of SO and PO determined by the difference method were not affected by inclusion level. The DE and ME determined by the regression method for SO were greater compared with the corresponding respective values for PO (DE: 37.07, ME: 36.79 MJ/kg for SO; DE: 34.11, ME: 33.84 MJ/kg for PO, respectively). These values were close to the DE and ME values determined by the difference method at the 10% inclusion level (DE: 37.31, ME: 36.83 MJ/kg for SO; DE: 34.62, ME: 33.47 MJ/kg for PO, respectively). A similar response for the apparent total tract digestibility of acid-hydrolyzed ether extract (AEE) in lipids was observed. The true total tract digestibility of AEE in SO was significantly (p<0.05) greater than that for PO (97.5% and 91.1%, respectively). In conclusion, the DE and ME contents of lipid was not affected by its inclusion level. The difference method can substitute the regression method to determine the DE and ME contents in lipids when the inclusion level is 10%.
Xing-Wei Ding,Jianhua Zhang,Weimin Shi,Hao Zhang,Chuanxin Huang,Jun Li,Xueyin Jiang,Zhilin Zhang 한국물리학회 2014 Current Applied Physics Vol.14 No.12
The instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with different active layer thicknesses under temperature stress has been investigated through using the density-of-states (DOS). Interestingly, the a-IGZO TFT with 22 nm active layer thickness showed a better stability than the others, which was observed from the decrease of interfacial and semiconductor bulk trap densities. The DOS was calculated based on the experimentally-obtained activation energy (EA), which can explain the experimental observations. We developed the high-performance Al2O3 TFT with 22 nm IGZO channel layer (a high mobility of 7.4 cm2/V, a small threshold voltage of 2.8 V, a high Ion/Ioff 1.8 107, and a small SS of 0.16 V/dec), which can be used as driving devices in the next-generation flat panel displays.
Jun Li,You-Hang Zhou,De-Yao Zhong,Chuanxin Huang,Jian Huang,Jianhua Zhang 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
In this work, the high κ Zr x Al 1−x O y fi lms with a diff erent Zr concentration have been deposited by atomic layer deposition,and the eff ect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric propertiesof Zr x Al 1−x O y fi lms is analyzed by Atomic force microscopy, X-ray diff raction, X-ray photoelectron spectroscopy andcapacitance-frequency measurement. The eff ect of Zr concentrations of Zr x Al 1-x O y gate insulator on the electrical propertyand stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is fi rstlyinvestigated. Under NBIS and TS, the much better stability of ZTO TFTs with Zr x Al 1−x O y fi lm as a gate insulator is due tothe suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeationat the ZTO/Zr x Al 1−x O y interface. It provides a new strategy to fabricate the low consumption and high stability ZTOTFTs for application.