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Deep blue organic light emitting diode based on anthracene derivative as a dopant
Bangdong Ding,Wenqing Zhu,Xueyin Jiang,Zhilin Zhang 한국물리학회 2008 Current Applied Physics Vol.8 No.5
This letter presents a deep blue organic light emitting diode which was fabricated by using 9,10-di(2-naphthyl)anthracene as a dopant and 4,4'-N,N'-dicarbazole-biphenyl as a host. The Commission Internationale de l’Eclairage coordinates of (0.1516, 0.0836) were achieved in the cell, which is very close to the National Television Standards Committee standard of (0.14, 0.08). Meanwhile, maximum luminance over 6500 cd/cm2 and maximum current efficiency of 3.5 cd/A were also obtained. This letter presents a deep blue organic light emitting diode which was fabricated by using 9,10-di(2-naphthyl)anthracene as a dopant and 4,4'-N,N'-dicarbazole-biphenyl as a host. The Commission Internationale de l’Eclairage coordinates of (0.1516, 0.0836) were achieved in the cell, which is very close to the National Television Standards Committee standard of (0.14, 0.08). Meanwhile, maximum luminance over 6500 cd/cm2 and maximum current efficiency of 3.5 cd/A were also obtained.
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Pure blue emission from undoped organic light emitting diode based on anthracene derivative
Bangdong Ding,Wenqing Zhu,Xueyin Jiang,Zhilin Zhang 한국물리학회 2008 Current Applied Physics Vol.8 No.5
This paper presents organic light emitting diodes (OLEDs) which were fabricated by using undoped 9,10-di(2-naphthyl)anthracene (ADN) as the emitting layer, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-amine (TPD) as the hole transporting layer, and one of tris-(8-hydroxy-quinolinato) aluminum (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 2-tert-butylphenyl-5-biphenyl- 1,3,4-oxadiazole (PBD) as the electron transporting layer. By optimization for the thickness of device, efficient pure blue organic light emitting diodes were obtained, which is attributed to the synergy of both the hole transporting layer and the electron transporting layer. This paper presents organic light emitting diodes (OLEDs) which were fabricated by using undoped 9,10-di(2-naphthyl)anthracene (ADN) as the emitting layer, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-amine (TPD) as the hole transporting layer, and one of tris-(8-hydroxy-quinolinato) aluminum (Alq3), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 2-tert-butylphenyl-5-biphenyl- 1,3,4-oxadiazole (PBD) as the electron transporting layer. By optimization for the thickness of device, efficient pure blue organic light emitting diodes were obtained, which is attributed to the synergy of both the hole transporting layer and the electron transporting layer.
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Red organic light-emitting devices based on a pentacene derivative
Xiangdong Luo,Hong Gu,Bangdong Ding,Li Wang,Xiaowen Zhang,Wenqing Zhu,Xueyin Jiang,Zhilin Zhang 한국물리학회 2011 Current Applied Physics Vol.11 No.3
A more steric hindrance pentacene derivative, 6,13-di-(3,5-diphenyl) phenylpentacene (PDT) is synthesized in this experiment. And this manuscript presents the red emission organic light-emitting devices based on tris-(8-hydroxy- quinolinato) aluminum (Alq_3) co-doped with 6,13-di-(3,5-diphenyl) phenylpentacene (PDT), and 5,6,11,12-tetraphenylnaphthacene (rubrene). By measuring and analyzing the intensity of red emission and Commission Internationale de l’Eclairage (CIE) coordinates of the devices with different rubrene concentrations and thicknesses of active layer, an optimized structure of [ITO/TPD (50 nm)/Alq_3: 3mol%PDT:1mol%rubrene(60 nm)/Bphen(25 nm)/LiF/Al] is obtained. The experimental results suggest that rubrene assists energy transfer from Alq3 to PDT in composite of Alq_3:PDT:rubrene,which results in relatively pure red emission. A red emission with chromaticity coordinates (x = 0.61,y = 0.37) is also obtained with the emitting layer of [Alq_3:3 mol% PDT:1 mol% rubrene] within the driving current density range of 12―120 mA/cm^2. A maximum luminance efficiency of 2.4 cd/A is measured at current density of 120 mA/cm^2 and high brightness of 2894 cd/m^2.
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Jin Cao,Xiang Liu,M.A. Khan,WenQing Zhu,XueYin Jiang,ZhiLin Zhang,ShaoHong Xu 한국물리학회 2007 Current Applied Physics Vol.7 No.3
RGB pixels by microcavity top-emitting organic light-emitting diode (TOLED) is benecial to both minimizing the loss of light andimproving the color purity and the eciency. Based on the multi-emitting layers, white organic light-emitting diodes (OLEDs) andmicrocavity TOLEDs were prepared. TOLEDs were fabricated using Ag/ITO as the reector and adjusting layer, Al/Ag as semi-trans-cavity and the color of the device have been changed. So we get RGB tricolor devices. The peak wavelengths are 476 nm, 539 nm,601 nm, Commission Internationale d’Eclairage (CIE) coordinates are (0.133,0.201), (0.335,0.567), (0.513,0.360), FWHM are 32 nm,50 nm, 73 nm for blue, green and red, respectively.
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Xing-Wei Ding,Jianhua Zhang,Weimin Shi,Hao Zhang,Chuanxin Huang,Jun Li,Xueyin Jiang,Zhilin Zhang 한국물리학회 2014 Current Applied Physics Vol.14 No.12
The instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with different active layer thicknesses under temperature stress has been investigated through using the density-of-states (DOS). Interestingly, the a-IGZO TFT with 22 nm active layer thickness showed a better stability than the others, which was observed from the decrease of interfacial and semiconductor bulk trap densities. The DOS was calculated based on the experimentally-obtained activation energy (EA), which can explain the experimental observations. We developed the high-performance Al2O3 TFT with 22 nm IGZO channel layer (a high mobility of 7.4 cm2/V, a small threshold voltage of 2.8 V, a high Ion/Ioff 1.8 107, and a small SS of 0.16 V/dec), which can be used as driving devices in the next-generation flat panel displays.
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