http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Jia, Yuefa,Wu, Changjin,Kim, Deok-Hyeon,Lee, B.W.,Rhee, S.J.,Park, Yun Chang,Kim, Chul Sung,Wang, Q.J.,Liu, Chunli Elsevier 2018 CHEMICAL ENGINEERING JOURNAL -LAUSANNE- Vol.337 No.-
<P><B>Abstract</B></P> <P>In the present work, N doped BiFeO<SUB>3</SUB> (N-BFO) nanoparticles have been synthesized via a sol-gel rapid calcination technique using melamine (C<SUB>3</SUB>H<SUB>6</SUB>N<SUB>6</SUB>) as the N precursor. It is found that N-doping could effectively narrow the band gap of BFO, which obviously enhanced the visible light adsorption capability. Meanwhile, N-doping could lead to significant increase in the magnetization of BFO. Particularly, the saturation magnetization (<I>M<SUB>s</SUB> </I>) was increased up to 0.35 emu/g (as compared to that of pure BFO: 0.07 emu/g) when 12.5 mmol N doping precursor was used (12.5N-BFO). The catalytic performance of N-BFO nanoparticles was evaluated through the degradation of bisphenol A (BPA) under visible light irradiation. 12.5N-BFO was found to be an efficient catalyst of BPA, and the addition of H<SUB>2</SUB>O<SUB>2</SUB> (10 mmol/L) or H<SUB>2</SUB>O<SUB>2</SUB> (10 mmol/L)/<SMALL>L</SMALL>-cysteine (0.25 mmol/L) can further enhance the degradation efficiency up to 60% and 94% within 120 min, respectively. The 12.5N-BFO nanoparticles were very stable during photocatalytic processes and their photo-Fenton catalytic activity can be retained even after three recycling processes.</P> <P><B>Highlights</B></P> <P> <UL> <LI> N doped BiFeO<SUB>3</SUB> have been synthesized using melamine as the N precursor. </LI> <LI> The band gap and saturation magnetization of N doped BiFeO<SUB>3</SUB> is tunable. </LI> <LI> N doped BiFeO<SUB>3</SUB>/H<SUB>2</SUB>O<SUB>2</SUB> shows enhanced efficient degradation of bisphenol A. </LI> <LI> Addition of <SMALL>L</SMALL>-cysteine can further enhanced photodegradation performance. </LI> <LI> A mechanism of bisphenol A degradation was proposed. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Thickness effect on the stability of unipolar resistance switching in tin ferrite thin films
Guodong Gong,Changjin Wu,Pengfei Hu,Ying Li,Namic Kwon,Chunli Liu 한국물리학회 2016 Current Applied Physics Vol.16 No.9
We report the reproducible unipolar resistance switching behavior in Pt/SnFe2O4/Pt structures. The amorphous SnFe2O4 thin film was spin-coated on the Pt/TiO2/SiO2/Si substrate by a sol-gel method. The current-voltage characterization showed that as the spin coating cycles increased, the resistive switching (RS) characteristics became stable, and an excellent RS performance showing uniform set voltage distribution, stable resistance of both low resistance and high resistance states, and narrow reset current distribution can be obtained in SFO films with a thickness about 220 nm. Based on the conducting filament model, the variation of the RS behavior was ascribed to the increase of the electroforming voltage in the thicker films, which consequently induced more oxygen vacancies to participate in the RS process. Our results indicated that the electroforming voltage performs a significant role in the RS properties of the amorphous SnFe2O4 and the optimized RS behavior through the regulation of preparation process can be used for the resistance random access memory applications.
Thickness effect on the stability of unipolar resistance switching in tin ferrite thin films
Gong, Guodong,Wu, Changjin,Hu, Pengfei,Li, Ying,Kwon, Namic,Liu, Chunli Elsevier 2016 CURRENT APPLIED PHYSICS Vol.16 No.9
<P>We report the reproducible unipolar resistance switching behavior in Pt/SnFe2O4/Pt structures. The amorphous SnFe2O4 thin film was spin-coated on the Pt/TiO2/SiO2/Si substrate by a sol-gel method. The current-voltage characterization showed that as the spin coating cycles increased, the resistive switching (RS) characteristics became stable, and an excellent RS performance showing uniform set voltage distribution, stable resistance of both low resistance and high resistance states, and narrow reset current distribution can be obtained in SFO films with a thickness about 220 nm. Based on the conducting filament model, the variation of the RS behavior was ascribed to the increase of the electroforming voltage in the thicker films, which consequently induced more oxygen vacancies to participate in the RS process. Our results indicated that the electroforming voltage performs a significant role in the RS properties of the amorphous SnFe2O4 and the optimized RS behavior through the regulation of preparation process can be used for the resistance random access memory applications. (C) 2016 Elsevier B.V. All rights reserved.</P>
Xu, Hongtao,Wu, Changjin,Xiahou, Zhao,Jung, Ranju,Li, Ying,Liu, Chunli Springer US 2017 Nanoscale research letters Vol.12 No.1
<P>Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO<SUB>2</SUB>/SiO<SUB>2</SUB>/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications.</P>