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Thickness effect on the stability of unipolar resistance switching in tin ferrite thin films
Guodong Gong,Changjin Wu,Pengfei Hu,Ying Li,Namic Kwon,Chunli Liu 한국물리학회 2016 Current Applied Physics Vol.16 No.9
We report the reproducible unipolar resistance switching behavior in Pt/SnFe2O4/Pt structures. The amorphous SnFe2O4 thin film was spin-coated on the Pt/TiO2/SiO2/Si substrate by a sol-gel method. The current-voltage characterization showed that as the spin coating cycles increased, the resistive switching (RS) characteristics became stable, and an excellent RS performance showing uniform set voltage distribution, stable resistance of both low resistance and high resistance states, and narrow reset current distribution can be obtained in SFO films with a thickness about 220 nm. Based on the conducting filament model, the variation of the RS behavior was ascribed to the increase of the electroforming voltage in the thicker films, which consequently induced more oxygen vacancies to participate in the RS process. Our results indicated that the electroforming voltage performs a significant role in the RS properties of the amorphous SnFe2O4 and the optimized RS behavior through the regulation of preparation process can be used for the resistance random access memory applications.
Thickness effect on the stability of unipolar resistance switching in tin ferrite thin films
Gong, Guodong,Wu, Changjin,Hu, Pengfei,Li, Ying,Kwon, Namic,Liu, Chunli Elsevier 2016 CURRENT APPLIED PHYSICS Vol.16 No.9
<P>We report the reproducible unipolar resistance switching behavior in Pt/SnFe2O4/Pt structures. The amorphous SnFe2O4 thin film was spin-coated on the Pt/TiO2/SiO2/Si substrate by a sol-gel method. The current-voltage characterization showed that as the spin coating cycles increased, the resistive switching (RS) characteristics became stable, and an excellent RS performance showing uniform set voltage distribution, stable resistance of both low resistance and high resistance states, and narrow reset current distribution can be obtained in SFO films with a thickness about 220 nm. Based on the conducting filament model, the variation of the RS behavior was ascribed to the increase of the electroforming voltage in the thicker films, which consequently induced more oxygen vacancies to participate in the RS process. Our results indicated that the electroforming voltage performs a significant role in the RS properties of the amorphous SnFe2O4 and the optimized RS behavior through the regulation of preparation process can be used for the resistance random access memory applications. (C) 2016 Elsevier B.V. All rights reserved.</P>
High-performance Zinc-Tin-Oxide thin film transistors based on environment friendly solution process
Qian Zhang,Guodong Xia,Lubin Li,Wenwen Xia,Hong-Yu Gong,Sumei Wang 한국물리학회 2019 Current Applied Physics Vol.19 No.2
Zinc-Tin-Oxide (ZTO) thin films were fabricated using a simple and eco-friendly sol-gel method and their application in thin film transistors (TFTs) was investigated. Annealing temperature has a crucial influence on the structure and electrical properties of sol-gel ZTO thin films. The ZTO thin films annealed at 300–600 °C revealed smooth and uniform surfaces with amorphous state, in addition, a high optical transparency over 90% of the ZTO films in the visible range was obtained. The electrical performance of ZTO TFTs showed obvious dependence on annealing temperature. The ZTO TFTs annealed at 500 °C showed a high carrier mobility of 5.9 cm2 /V, high on/off current ratio (Ion/off) of 106 -107 , and threshold voltage (Vth) of 1.03 V. To demonstrate the application of sol-gel ZTO films in low-power display fields, we also fabricated ZTO TFTs with a solution-processed high-permittivity (high-k) ZrTiOx dielectric layer. The ZTO/ZrTiOx TFTs showed high mobility of 17.9 cm2 /V and Ion/off of 105 -106 at a low operation voltage of 3 V, indicating that Indium-free ZTO thin films would be potential candidates for low cost, high performance oxide TFT devices.