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Reverse Bias Leakage Current Mechanism of AlGaN/InGaN/GaN Heterostructure
Apurba Chakraborty,Saptarsi Ghosh,Partha Mukhopadhyay,Sanjay K. Jana,Syed Mukulika Dinara,Ankush Bag,Mihir K. Mahata,Rahul Kumar,Subhashis Das,Palash Das,Dhrubes Biswas 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.2
The reverse bias leakage current mechanism of AlGaN/InGaN/GaNheterostructure is investigated by current-voltage measurement intemperature range from 298 K to 423 K. The Higher electric field acrossthe AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructuredue to higher polarization charge is found to be responsible for strongFowler-Nordheim (FN) tunnelling in the electric field higher than3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse biasleakage current is also found to follow the trap assisted Frenkel-Poole(FP) emission in low negative bias region. Analysis of reverse FPemission yielded the barrier height of trap energy level of 0.34 eV withrespect to Fermi level.
Relative Rota-Baxter systems on Leibniz algebras
Apurba Das,Shuangjian Guo 대한수학회 2023 대한수학회지 Vol.60 No.2
In this paper, we introduce relative Rota-Baxter systems on Leibniz algebras and give some characterizations and new constructions. Then we construct a graded Lie algebra whose Maurer-Cartan elements are relative Rota-Baxter systems. This allows us to define a cohomology theory associated with a relative Rota-Baxter system. Finally, we study formal deformations and extendibility of finite order deformations of a relative Rota-Baxter system in terms of the cohomology theory.
Das, Debabrata,Rai, Avdhesh Kumar,Kataki, Amal Chandra,Barmon, Debabrata,Deka, Pankaj,Sharma, Jagannath Dev,Sarma, Anupam,Shrivastava, Sushruta,Bhattacharyya, Mouchumee,Kalita, Apurba Kumar,Sharma, Mo Asian Pacific Journal of Cancer Prevention 2013 Asian Pacific journal of cancer prevention Vol.14 No.2
Background: Persistent infection of one or more of about 15 high-risk human papillomaviruses (HR-HPVs), most commonly HPV types 16/18, has a significant role in cervical cancer initiation and progression. There are limited data available from north-east India about HPV prevalence though this region has high incidence rates of cervical cancer. The aim of this study was to investigate the HPV genotypes prevalent in cervical cancer patients of north-east India. Materials and Methods: We analyzed 107 cervical cancer patient samples. Nested multiplex PCR assays were employed for detection of 13 high risk and 5 low risk HPV types. Results: HPV was confirmed in 105 samples. The presence of 6 'carcinogenic' HPV types, HPV-16 (88%), -18 (15%), -31(4%),-45 (3%), -59 (4%), -58(1%), and one non carcinogenic, HPV-6/11 (6%), was recorded. Among various demographic and clinical factors only tumour stage showed a statistically significant association with HPV type infection (P=0.019). Conclusions: We suggest that the most prevalent genotype is HPV-16 followed by HPV-18 in cervical carcinoma patients of the north-eastern region of India. Advanced tumour stage may be associated with increased possibility of harbouring multiple HPV genotypes.
Sudipta Das,Krista R. Khiangte,Rajveer S. Fandan,Jaswant S. Rathore,Ravindra S. Pokharia,Suddhasatta Mahapatra,Apurba Laha 한국물리학회 2017 Current Applied Physics Vol.17 No.3
We report growth, structural, and electrical properties of epitaxial Ge layers on Si (001) wafers for next generation complementary metal oxide semiconductor devices. The epi-Ge layers were grown by solid source molecular beam epitaxy (MBE) at substrate temperatures (TG) varying from 200 C to 500 C. A two-step growth process, where an initial layer of thickness ~30 nm is grown at a substrate temperature of 250 C (except those grown below/at 250 C), and the remaining layer is grown at a higher temperature, was found to be an efficient approach to improve the crystal quality of the Ge layers. The epi-Ge on Si exhibits bulk hole-mobility as high as 736 cm2/V-s at room temperature. Ti/Ge/Ti metalsemiconductor-metal (MSM) back-to-back Schottky diodes, fabricated on these epitaxial Ge layers, show excellent electrical properties. Further, metal oxide semiconductor (MOS) capacitors fabricated with HfO2 as the gate oxide exhibit low leakage current density of 4.7 102 A/cm2 (at VgVFB ¼ 1 V) and mid-gap interface trap density of 5.0 1012cm2eV1.
Dry Electrostatic Spray Coated Towpregs for Thermoplastic Composites
Vijay Goud,Ramasamy Alagirusamy,Apurba Das,Dinesh Kalyanasundaram 한국섬유공학회 2018 Fibers and polymers Vol.19 No.2
Though the processing steps for the manufacture of thermoplastic composites present little difficulty when compared to those for thermoset composites, it is not cost effective as a result of difficulty in accomplishing thorough infusion of resin into fibers and fibrous structures. Tremendously high viscosity for thermoplastic resin leads to numerous problems in the manufacturing process of thermoplastic composites. Pre-impregnation processes such as melt impregnation or solution impregnation, tend to form a stiff towpreg that cannot be used for any textile preforming operation. Powder coating can be a destined to be a cost effective as well as efficient processing technology to produce a flexible towpreg. A method for production of flexible towpregs for thorough infusion of resin into fibers using electrostatic spray gun, which involves powder coating a bundle of filaments is described. During the powder coating process using electrostatic spray gun, powder particles fetched by a conveying air stream, from a fluidizing hopper, are charged in the high voltage corona discharge by ion bombardment and transported to the fiber tow through the combination of electrostatic, aerodynamic and gravitational forces. Aerodynamic forces have the obligation to carry the powder particles to the tow where electrostatic forces dominate and cause the adherence of powder particles to the potentially grounded tow. After the powder deposition, tow is made to pass through convective oven where powder particles glue to the reinforcement as a result of partial liquefaction of the powder. The towpreg formed is then wound by the take up device. Take up device is equipped with dancerarm which ensures constant line tension and thereby consistent powder deposition. The effects of process variables of the electrostatic spray process such as corona voltage, fluidizing air pressure, conveying air pressure, distance of gun from tow and tow velocity on maximum powder deposition are investigated and reported.
Rahul R. Gadkari,Ashutosh Gupta,Uddesh Teke,Atul Awadhiya,Mohammad Shahadat,Wazed Ali,Apurba Das,Ramasamy Alagirusamy 한국공업화학회 2021 Journal of Industrial and Engineering Chemistry Vol.99 No.-
In this study, a novel eco-friendly chitosan-cinnamaldehyde cross-linked nanoparticles (CSN) weresynthesised via a green route and deposited, in alternating combination with sodium tripolyphosphate(TPP), over polyester (PET) nonwoven fabric using layer-by-layer (L-B-L) coating technique. Thesuccessful deposition of a nano-level coating (upto 684.7 nm) of 10.5 bi-layers of CSN and TPP, i.e. (CSN/TPP)10.5, with CSN at the top, was achieved at individualfibre surface as confirmed via scanning electronmicroscopy. Fabric coated with (CSN/TPP)10.5 showed remarkable antibacterial activity against both theGram-positive (Staphylococcus aureus) and Gram-negative (Escherichia coli) bacteria, even with a lowconcentration of the nanoparticles (0.1 w/v). Moreover, the coating material possesses very low toxicityas revealed by the cytotoxicity test. The developed fabric could also adsorb metal ions like Pb2+, Cu2+, Fe3+,Ni2+, Zr4+ and Cd2+, etc. from water. The coating was found to be stable in alkaline and neutral pHenvironments. The slight reduction in the pore dimensions, air permeability and tensile strength of fabricafter coating were insignificant with respect to its potential applications in developing health careproducts, medical and health care textiles and dry or wet purification media.