Phenomenal study on the dopant activation behavior in polysilicon thin films doped by non-mass separated ion mass doping technique

윤진영,최덕균,Yoon, Jin-Young,Choi, Duck-Kyun The Korea Association of Crystal Growth 1997 韓國結晶成長學會誌 Vol.7 No.1

본 연구는 수소로 희석된 $B_2H_6$를 도판트 소스 가스로 사용하여 이온 질량 주입(ion mass doping)을 하였을 때 다결정 박막의 전기적 특성과 도판트의 활성화시 방사 손상(radiation damage)의 효과에 대하여 고찰하였다. 다결정 박막에서 보론(boron)의 SIMS 분석과 컴퓨터 시뮬레이션인 TRIM92를 비교해서 가장 주입 확률이 높은 이온의 종류는 $B_2H_x\;^+$(x=1, 2, 3‥‥) 형태의 분자 이온임을 알았다. 높은 에너지의 질량 이온 주입 결과 시간에 따라 변화하는 비정질화된 층의 분율이 다결정 박막 내에 연속적인 비정질 충으로 존재하였다. 주입 이온의 질량 분리가 일어나지 않는 이온 질량 주입법(ion mass doping technique)에 의해 비정질화는 유발된다. 손상된 시편의 중간 열처리 온도 범위에서 도판트 활성화 거동과 역 열처리(reverse annealing) 효과가 관찰되었다. 이와 같은 연구의 결과 p-채널 다결정 박막 트랜지스터의 오프 스테이트(off-state) 전류는 방사 손상(radiation damage)에 의존한다. The electrical properties of polysilicon thin films implanted with $B_2H_6$ diluted in $H_2$ as dopant source using ion mass doping technique and the effect of radiation damage on the dopant activation behavior were investigated. Comparing the SIMS profiles of boron in polysilicon films with that obtained from computer simulation using TRIM92 the most probable ion species were $B_2H_x\;^+$(x=1, 2, 3‥‥) type molecular ions. As a result of the Implantation of energetic massive ions, a continuous amorphized layer was created in polysilicon films where the fraction of amorphized layer varied with doping time. This amorphization comes from the fact that mass separation of implanting species is not employed in this ion mass doping technique. In the dopant activation behavior, reverse annealing phenomenon appeared in the intermediate annealing temperature range for a severely damaged specimen. The experimental result showed that the off-state current of the p-channel polysilicon thin film transistor is dependent on the degree of radiation damage.

RF Magnetron Sputtering으로 증착된 ZnO의 증착 특성과 이를 이용한 Thin Film Transistor특성

김영웅,최덕균,Kim, Young-Woong,Choi, Duck-Kyun 한국마이크로전자및패키징학회 2007 마이크로전자 및 패키징학회지 Vol.14 No.3

플라스틱 기판에 적용이 가능한 최대 공정온도 $270^{\circ}C$ 이하에서 ZnO-TFT 소자를 제작하였다. ZnO-TFT 소자는 bottom gate 구조로 제작되었으며, ICP-CVD로 형성된 $SiO_2$ 산화물 게이트 공정을 제외하고는 모든 박막증착 공정은 RF-magnetron sputtering process를 이용하였다. ZnO 박막은 Ar과 $O_2$ gas 유량의 비율에 따라 여러 가지 조건에서 RF-magnetron sputtering 시스템을 이용하여 상온에서 증착하였다. Ar과 $O_2$ gas의 비율에 따라 제작된 TFT 소자는 모두 enhancement 모드의 소자특성을 나타내었고, 또한 가시광선영역에 있어 80% 이상의 높은 투과율을 보였다. ZnO 증착시 순수 Ar을 사용하여 제작된 ZnO-TFT의 경우에, $1.2\;cm^2/Vs$의 field effect mobility, 8.5 V의 threshold voltage, 그리고 $5{\times}10^5$의 높은 on/off ratio, 1.86 V/decade의 swing voltage로 가장 우수한 전기적 특성을 보였다. Low temperature processed ZnO-TFTs on glass below $270^{\circ}C$ for plastic substrate applications were fabricated and their electrical properties were investigated. Films in ZnO-TFTs with bottom gate configuration were made by RF magnetron sputtering system except for $SiO_2$ gate oxide deposited by ICP-CVD. ZnO channel films were grown on glass with various Ar and $O_2$ flow ratios. All of the fabricated ZnO-TFTs showed perfectly the enhancement mode operation, a high optical transmittance of above 80% in visible ranges of the spectrum. In the ZnO-TFTs with pure Ar process, the field effect mobility, threshold voltage, and on/off ratio were measured to be $1.2\;cm^2/Vs$, 8.5 V, and $5{\times}10^5$, respectively. These characteristic values are much higher than those of the ZnO-TFTs of which ZnO channel layers were processed with additional $O_2$ gas. In addition, ZnO-TFT with pure Af process showed smaller swing voltage of 1.86v/decade compared to those with $Ar+O_2$ process.

PDP 무연 투명유전체 후막의 형성 및 특성

허성철,최덕균,오영제,Heo, Sung-Cheol,Choi, Duck-Kyun,Oh, Young-Jei 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.10

Dry film method for large size of PDP(Plasma Display Panel) module has been actively investigated. This method for lead-free transparent dielectric formation depends on green sheet technology. By adjusting the composition of transparent dielectric powders and organics, uniformly dispersed slurry was fabricated, Viscosity of the slurry exhibited pseudoplastic behavior for tape casting, Cast green sheets were tested under tensile condition at room temperature. It was found that the increase in transparent dielectric powder and binder ratio leads to decrease in strain to failure of green sheets from 120 % to 34 % and from 255 % to 4 %, respectively. Tensile strength of green sheets decreased abruptly with increase of transparent dielectric powder ratio, with minimum at 0.13 MPa. On the other hand, tensile strength increased continuously from 0.1 MPa to 2.4 MPa with increase of binder ratio. The green sheets were attached on the glass substrate and heated by following firing schedule. As a result, the best result was obtained when fired at 580 $^{\circ}C$ for 15 min and had transmittance of 78 % in visible range 550 nm.

알루미나 여과막의 상전이와 미세구조 변화

정훈,최덕균,정덕수,Cheong, Hun,Choi, Duck-Kyun,Cheong, Deck-Soo 한국재료학회 2000 한국재료학회지 Vol.10 No.9

Alumina membrane was prepared by sol-gel coating method using boehmite powder(${\Upsilon}-AlOOH$). The supported and the unsupported alumina membrane were fabricated to investigate the phase transformation and change of microstructure. It is important to control the homogeneous pore size and distribution in application of filtering process. The ${\theta}-to\;{\alpha}-AL_2O_3$ phase transformation (XRD) and the change of microstructure was investigated using scanning electron microscopy(SEM). XRD patterns showed that the supported membrane had $100^{\circ}C$ higher ${\theta}-to\;{\alpha}-AL_2O_3$ transformation temperature compared to the unsupported membrane. The similar effect was also observed for microstructural change of the membrane. 알루미나 여과막은 boehmite 분말 (${\Upsilon}-AlOOH$)을 이용하여 졸-겔법으로 준비되어졌다. 제조된 여과막은 상전이 온도와 미세구조 변화를 관찰하기 위해 지지체 없이 형성된 여과막을 제조하였다. 여과 공정의 응용에서 균일한 기공크기와 분포를 제어하는 것이 중용하다. 다공성 담체 위에 형성된 여과막과 다공성 담체 없이 형성된 여과막의 ${\theta}-to\;{\alpha}-AL_2O_3$로의 상전이는 박막 XRD를 이용하여 분석하였고, 미세구조의 변화의 관찰은 주사전자현미경(SEM)을 사용하여 관찰하였다. XRD에서 분석된 결과는 다공성 담체 위에 형성된 여과막이 다공성 담체 없이 형성된 여과막과 비교하여 $100^{\circ}C$ 더 높은 상전이 온도를 가지는 것을 보여주었다. 이런 유사한 효과는 여과막의 미세구조 변화에서도 관찰되었다.

LiNbO₃ 섬유 단결정의 분극에 관한 연구

강봉훈,장재혁,최덕균,신태희,주기태,Kang, Bong-Hoon,Jang, Jae-Hyuk,Choi, Duck-Kyun,Shin, Tae-Hee,Joo, Gi-Tae 한국세라믹학회 2009 한국세라믹학회지 Vol.46 No.4

Congruent or stoichiometric $LiNbO_3$ fiber single crystals were grown by the $\mu$-PD method, and the grown fiber crystals have the several (2 or 3) ridges with a diameter of $1.35{\sim}1.5\;mm$ and a length of $40{\sim}100\;mm$. In this $\mu$-PD process, different growth rates ($10{\sim}60\;mm/h$) were applied. Pt wire or $LiNbO_3$ crystal was used as a seed. The properties of grown $LiNbO_3$ fiber single crystals having a-axis or c-axis according to seeds were effected by the grown conditions(Pt tube diameter, pulling speed, after heater etc.). Disk-type $LiNbO_3$ samples were poled in condition of DC 5 V/cm at 1050, 1075 or $1100^{\circ}C$. XRD, SEM, conoscope image through the polarized microscope, $T_C$ measuring apparatus, optical transmittance measuring instrument are used to identify the properties of $LiNbO_3$.

알루미나 여과막의 상전이와 미세구조 변화: I. 지지체의 기공율에 의한 영향

정훈,황광택,최덕균,정덕수,Cheong, Hun,Hwang, Kwang-Taek,Choi, Duck-Kyun,Cheong, Deock-Soo 한국재료학회 2002 한국재료학회지 Vol.12 No.3

The HPS(High Porosity Support, 39.3%) and the LPS( Low Porosity Support, 18.7%) were fabricated to investigate the phase transformation and the chance of microstructure with porosity of alumina support. Alumina sol was made using aluminum tri-sec $butoxide(ATSB,\; Al(O-Bu)_3)$, the membrane on porous support with different porosity and the membrane without support were fabricated. The $\theta$-to ${\alpha}-A1_2O_3$ phase transformation in the membranes was investigated using thin film X-ray diffraction (XRD), and the change of microstructure was observed using scanning electron microscopy(SEM). XRD patterns showed that the membrane on LPS and HPS had 10$0^{\circ}C$, 5$0^{\circ}C$ higher $\theta$-to ${\alpha}-A1_2O_3$ transformation temperature compared to the unsupported membrane. A similar effect was also observed in microstructure of the membranes, theoritical temperature difference were 97$^{\circ}C$ and 44$^{\circ}C$ by Crapeyron equation.

RF 마그네트론 스퍼터링에 의해 제조된 AlN 박막의 증착 특성

송종한,전명표,최덕균,Song, Jong-Han,Chun, Myoung-Pyo,Choi, Duck-Kyun 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.12

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

솔보써말 방법을 이용한 구리분말 제조 및 전자파 차폐제로의 응용

이효원,김수룡,권우택,최덕균,김영희,Lee, Hyo-Won,Kim, Soo-Ryong,Kwon, Woo-Teck,Choi, Duck-Kyun,Kim, Young-Hee 한국재료학회 2006 한국재료학회지 Vol.16 No.5

Copper powders have been widely used in electrically conductive coatings, electrode materials et al. and are very prospective since they are cheaper than noble metal powders such as silver or palladium. In this study, copper powders for metal filler of EMI shielding have been prepared using a solvothermal process from $CuSO_4$, NaOH, Glucose, mixed solvent ($H_2O$: Ethanol) and hydrazine which was used as a reducing agent at various reaction conditions. The prepared copper powders showed finely dispersed spherical shape without agglomerate, uniform morphology, narrow size distribution, high purity and were about 400-700 nm in size. The prepared powders were characterized using XRD, SEM, TGA, XPS, particle size measurement and EMI shielding efficiency.

Ion Mass Doping 법을 이용한 Phosphorus 주입된 실리콘 박막의 Annealing 특성

강창용(Chang Yong Kang),최덕균(Duck Kyun Choi),주승기(Seung Ki Joo) 한국표면공학회 1994 한국표면공학회지 Vol.27 No.4

(Bi_1?2Na_1?2)_1-xCa_xTiO₃ 세라믹스의 압전 특성 및 상전이 거동

이용현,조정호,김병익,최덕균,Lee, Yong-Hyun,Cho, Jeong-Ho,Kim, Byung-Ik,Choi, Duck-Kyun 한국세라믹학회 2008 한국세라믹학회지 Vol.45 No.5

$(Bi_{1/2}Na_{1/2})TiO_3$-based ceramics have been intensively studied as lead-free piezoelectric ceramics. In this study, the piezoelectric properties and phase transition behaviors of BNT based solid solution $(Bi_{0.5}Na_{0.5})_{1-x}Ca_xTiO_3$ ($X=0.01{\sim}0.25$) were investigated. The morphotropic phase boundary(MPB) zone which BNT is transformed from rhombohedral to cubic structure was appeared by adding $CaTiO_3$ with 0.12 mol by the measurement of permittivity and X-ray diffraction. The behavior which ferroelectric BNT with adding $CaTiO_3$ was changed to antiferroelectric and paraelectric state was confirmed by the measurement ofhysterisis loop and depolarization temperature as a function of temperature. As $CaTiO_3$ concentration was increased, the phase transition temperature was decreased. The piezoelectric properties were highest at 0.01 mol of $CaTiO_3$ concentration. The electromechanical coupling factor($K_t$) and mechanical quality factor($Q_m$) were 42% and 254, respectively.