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실리콘 미세 가공을 이용한 열전형 미소유량센서 제작 및 특성
이영화 ( Young Hwa Lee ),노성철 ( Sung Cheoul Roh ),나필선 ( Pil Sun Na ),김국진 ( Kook Jin Kim ),이광철 ( Kwang Chul Lee ),최용문 ( Yong Moon Choi ),박세일 ( Se Il Park ),임영언 ( Young Eon Ihm ) 한국센서학회 2005 센서학회지 Vol.14 No.1
N/A A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the Si₃N₄/ SiO₂/Si₃N₄ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities ((??(ΔV)/??(q)); AV : voltage difference, 4 : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.
Carbon Rich 분위기에서의 KHR45강의 침탄특성 평가 연구
임재균,양기모,임영언,Lim, Jae Kyun,Yang, Gimo,Ihm, Young Eon 한국재료학회 2013 한국재료학회지 Vol.23 No.5
In this study, an HP-mod. type(KHR-45A), which is used as a heater tube material in the pyrolysis process, was evaluated for its carburizing properties. It was confirmed from the microstructural observation of the tubes that the volume fraction of carbide increased and that the coarsening of Cr-carbide generated as a degree of carburization increased. The depth of the hardened layer, which is similar to the thickness of the carburized region of each specimen, due to carburization is confirmed by measurement of the micro-Vickers hardness of the cross section tube, which thickness is similar to that of the carburized region of each specimen. Two types of chromium carbides were identified from the EBSD (electron back-scattered diffraction) image and the EDS (energy-dispersive spectroscopy) analysis: Cr-rich $M_{23}C_6$ in the outer region and Cr-rich $M_7C_3$ in the inner region of tubes. The EDS analysis revealed a correlation between the ferromagnetic behavior of the tubes and the chromium depletion in the matrix. The chromium depletion in the austenite matrix is the main cause of the magnetization of the carburized tube. The method used currently for the measurement of the carburization of the tubes is confirmed; carburizing evaluation is useful for magnetic flux density measurement. The volume fraction of the carbide increased as the measuring point moved into the carburized side; this was determined from the calculation of the volume fraction in the cross-section image of the tubes. These results are similar to the trends of carburization measurement when those trends were evaluated by measurement of the magnetic flux density.
연료극 지지체식 원통형 고체산화물 연료전지의 제조 및 특성
송근숙,송락현,임영언,Song, Keun-Sik,Song, Rak-Hyun,Ihm, Young-Eon 한국재료학회 2002 한국재료학회지 Vol.12 No.9
A low temperature anode-supported tubular solid oxide fuel cell was developed. The anode-supported tube was fabricated using extrusion process. Then the electrolyte layer and the cathode layer were coated onto the anode tube by slurry dipping process, subsequently. The anode tube and electrolyte were co-fired at $140^{\circ}C$, and the cathode was sintered at $1200^{\circ}C$. The thickness and gas permeability of the electrolyte depended on the number of coating and the slurry concentration. Anode-supported tube was satisfied with SOFC requirements, related to electrical conductivity, pore structure, and gas diffusion limitations. At operating temperature of $800^{\circ}C$, open circuit voltage of the cell with gastight and dense electrolyte layer was 1.1 V and the cell showed a good performance of 450 mW/$\textrm{cm}^2$.
Ni-Cr계 합금을 이용한 정밀 박막저항체의 제조 및 특성
이영화,박세일,김국진,임영언,Lee Young Hwa,Park Se Il,Kim Kook Jin,Ihm Young Eon 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.1
Precision thin film resistors using evanohm R alloy were fabricated by do magnetron sputtering method. The physical and electrical properties of the resistors were studied after treatment of thermal annealing. The crystallization of the film was increased as the annealing temperature increase. Diffusion and oxidation of Cr and Al elements were occurred into the film surface. The minimum TCR values of 10.46 ppm/$^{\circ}C$ and 10.65 ppm/$^{\circ}C$ were measured at the annealing temperatures of $200^{\circ}C$ and $300^{\circ}C$, respectively. We are conducting additional studies to improve characteristics of our resistors for practical device application.
반응성 때려내기 방법에 의한 스피넬 형 ZnCo<sub>2</sub>O<sub>4</sub> 박막의 성장과 전기적 물성
송인창,김현중,심재호,김효진,김도진,임영언,주웅길,Song, In-Chang,Kim, Hyun-Jung,Sim, Jae-Ho,Kim, Hyo-jin,Kim, Do-jin,Ihm, Young-Eon,Choo, Woong-Kil 한국재료학회 2003 한국재료학회지 Vol.13 No.8
We report the synthesis of cubic spinel $ZnCo_2$$O_4$thin films and the tunability of the conduction type by control of the oxygen partial pressure ratio. Zinc cobalt oxide films were grown on$ SiO_2$(200 nm)/Si substrates by reactive magnetron sputtering method using Zn and Co metal targets in a mixed Ar/$O_2$atmosphere. We found from X-ray diffraction measurements that the crystal structure of the zinc cobalt oxide films grown under an oxygen-rich condition (the $O_2$/Ar partial pressure ratio of 9/1) changes from wurtzite-type $Zn_{1-x}$ $Co_{X}$O to spinel-type $ZnCo_2$$O_4$with the increase of the Co/Zn sputtering ratio,$ D_{co}$ $D_{zn}$ . We noted that the above structural change accompanied by the variation of the majority electrical conduction type from n-type (electrons) to p-type (holes). For a fixed $D_{co}$ $D_{zn}$ / of 2.0 yielding homogeneous spinel-type $_2$O$ZnCo_4$films, the type of the majority carriers also varied, depending on the$ O_2$/Ar partial pressure ratio: p-type for an $O_2$-rich and n-type for an Ar-rich atmosphere. The maximum electron and hole concentrations for the Zn $Co_2$ $O_4$films were found to be 1.37${\times}$10$^{20}$ c $m^{-3}$ and 2.41${\times}$10$^{20}$ c $m^{-3}$ , respectively, with a mobility of about 0.2 $\textrm{cm}^2$/Vs and a high conductivity of about 1.8 Ω/$cm^{-1}$ /.
심재호(Jae Ho Sim),김효진(Hyojin Kim),김도진(Dojin Kim),임영언(Young Eon Ihm),윤순길(Soon Kil Yoon),김현중(Hyun Jung Kim),주웅길(Woong Kil Choo) 한국자기학회 2005 韓國磁氣學會誌 Vol.15 No.3
We have investigated the effects of Al codoping on the structural, electrical transport, and magnetic properties of oxide diluted magnetic semiconductor Zn_(1-x)Cr_xO thin films prepared by reactive sputtering. Nondoped Zn_(0.99)Cr_(0.01)O thin films show semiconducting transport behavior and weak ferromagnetic characteristic. The Al doping increases the carrier concentration and results in an decrease of resistivity and metal-insulator transition behavior. With increasing carrier concentration, the magnetic properties drastically change, exhibiting a remarkable increase of the saturation magnetization. These results show carrier-enhanced ferromagnetic order in Cr-doped ZnO.
비정질 Ge<SUB>1 − x</SUB>Mn<SUB>x</SUB> 박막의 전기적, 자기적 특성에 미치는 열처리 효과
이병철(Byeong Cheol Lee),김동휘(Dong Hwi Kim),찬티난안(Tran Thi Lan Anh),임영언(Young Eon Ihm),김도진(Dojin Kim),김효진(Hyojin Kim),유상수(Sang Soo Yu),백귀종(Kui Jong Baek),김창수(Chang Soo Kim) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.3
Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were 1,000~5,000 A thick. Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were annealed at 300 ℃, 400 ℃, 500 ℃, 600 ℃ and 700 ℃ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films varies with Mn concentration. Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic Ge3Mn5 phase causes the change of magnetic and electrical properties of annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films.
Hyeong Kyu Lim(임형규),Tran Thi Lan Anh(찬티난안),Sang Soo Yu(유상수),Kui-Jong Baek(백귀종),Young Eon Ihm(임영언),Dojin Kim(김도진),Hyojin Kim(김효진),Chang Soo Kim(김창수) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.3
Magnetic phases of polycrystalline Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were studied. The Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were grown at 400 ℃ by using a molecular beam epitaxy. The Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin films were p-type and electrical resistivities were 4.0 × 10<SUP>?2</SUP>~1.5 × 10<SUP>?4</SUP> ohm-㎝. Based on the analysis of magnetic characteristics and microstructures, it was concluded that the ferromagnetic phase formed on the Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB>/SiO₂/Si(100) thin films was Ge₃Mn? phase which has about 310 K of Curie temperature. Moreover, the Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> thin film which had Ge₃Mn? phase showed the negative magnetoresistance to be about 9% at 20 K when the magnetic field of 9 T was applied.
비정질 Ge<SUB>1 − x</SUB>Mn<SUB>x</SUB> 박막의 자기수송특성에 미치는 열처리 효과
김동휘(Dong Hwi Kim),이병철(Byeong Cheol Lee),찬티난안(Tran Thi Lan Anh),임영언(Young Eon Ihm),김도진(Dojin Kim),김효진(Hyojin Kim),유상수(Sang Soo Yu),백귀종(Kui Jong Baek),김창수(Chang Soo Kim) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.4
Amorphous Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> semiconductor thin films grown by low temperature vapor deposition were annealed at various temperatures from 400 to 700 ℃ for 3 minutes in high vaccum chamber. The electrical and magnetotransport properties of as-grown and annealed samples have been studied. X-ray diffraction patterns analysis revealed that the samples still maintain amorphous state after annealling at 500 ℃ for 3 minutes and they were crystallized when annealing temperature increase to 600 ℃. Temperature dependence of resistivity measurement implied that as-grown and annealed Ge<SUB>1 ? x</SUB>Mn<SUB>x</SUB> films have semiconductor characteristics, the increase of resistivity with annealling temperature was obseved. The 700 ℃-annealed sample exhibited negative magnetoresistance (MR) at low temperatures and the MR ratio was ~8.5% at 10 K. The asymmetry was present in all MR curves. The anomalous Hall Effect was also observed at 250 K.