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Programming/Erasing Characteristics of 45 nm NOR-Type Flash Memory Based on SOI FinFET Structure
한경록,이종호,박기흥,Byung-Kil Choi 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
A novel NOR-type ash memory structure, based on SOI FinFET, is proposed for high-density and high-performance ash memories. This ash memory structure has oating gate on both sides of the fin body. To know the characteristics of this device, device simulation was performed extensively. We examined the programming/erasing characteristics depending on the coupling ratio (CR). The etching depth of buried oxide (BOX) layer and the oating-gate height were changed for different CR. By controlling the oating-gate height, we could obtain CR higher than 0.6. Regardless of the CR, the threshold-voltage (Vth) shift for programming was very small. However, erasing time due to Fowler-Nordheim (FN) was signicantly reduced on increasing the CR.
한경록,유창식,양석균,정영학,박인자,이강홍,김희철,김진천 대한대장항문학회 2005 Annals of Coloproctolgy Vol.21 No.1
Malignant intestinal lymphoma complicating ulcerative colitis has been reported. Although the association of colorectal cancer with ulcerative colitis is well described, the association of intestinal lymphoma, ulcerative colitis and prior immunosuppression remains unclear. However, it is important to be aware of the possible risk of lymphoma and carcinoma when patients shows unexpected signs of deterioration or when the clinical course of ulcerative colitis is atypical. Substantial biopsies with colonoscopy are required to make an unequivocal diagnosis in such patients. We report the case of non-Hodgkin's lymphoma in ulcerative colitis with review of the literature.