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박재홍,키노시타마사하루,요시다 코이치,박기현,정해도,Park, Jae-Hong,Kinoshita, Masaharu,Yoshida, Koichi,Park, Ki-Hyun,Jeong, Hae-Do 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.10
In this paper, a polishing pad has been analyzed in detail, to understand surface phenomena of polishing process. The polishing pad plays a key role in polishing process and is one of the important layer in polishing process, because it is a reaction layer of polishing[1]. Pad surface physical property is also ruled by pad profile. The profile and roughness of pad is controlled by different types of conditioning tool. Conditioning tool add mechanical force to pad, and make some roughness and profile. Formed pad surface will affect on polishing performance such as RR (Removal Rate) and uniformity in CMP Pad surface condition is changed by conditioning tool and dummy run and is stable at final. And this research, we want to reduce break-in and dummy polishing process by analysis of pad surface and artificial machining to make stable pad surface. The surface treatment or machining enables to control the surface of polishing pad. Therefore, this research intends to verify the effect of the buffing process on pad surface through analysis of the removal rate, friction force and temperature. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied because, this type of pad is most conventional type.
실리콘 연마에서 패드 버핑 공정이 연마특성에 미치는 영향
박기현,정해도,박재홍,마사하루키노시타,Park, Ki-Hyun,Jeong, Hae-Do,Park, Jae-Hong,Kinoshita, Masaharu 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.4
This paper investigated the effect of the pad buffing process on the material removal characteristics and pad stabilization during silicon chemical mechanical polishing. The pads surface were controlled by the buffing process using a buffer made by the sandpaper. The buffing process is based on abrasive machining by using a high speed sandpaper. The controlled pad by the buffing process show less deformation deviation and stable material removal rate during the CMP process. In addition, the controlled pad ensure better uniformity of removal rate than comparative pads. As a result of monitoring, the controlled pad by the buffing process demonstrated constant and stable friction force signals from initial polishing stage. Therefore, the tufting process could control the pad surface to be uniform and improve the performance of the polishing pad.
W CMP 공정에서의 연마패드표면 안정화 상태와 그 개선
박재홍,키노시타 마사하루,요시다 코이치,신이치 마츠무라,정해도,Park, Jae-Hong,Kinoshita, Masaharu,Yoshida, Koichi,Matsumura, Shinichi,Jeong, Hae-Do 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.12
In this research, the polishing pad for W CMP has been analyzed to understand stabilization of polishing performance. For stabilization of process, the polishing pad condition is one of important factors. The polishing pad plays a key role in polishing process, because it contact with reacted surface of wafer[1]. The physical property of pad surface is ruled by conditioning tool which makes roughness and profile of pad surface. Pad surface affects on polishing performance such as RR(Removal Rate) and uniformity in CMP. The stabilized pad surface has stable roughness. And its surface has high level of wettability which can increase the probability of abrasive adhesion on pad. The result of this research is that the reduction of break-in and dummy polishing process were achieved by artificial machining to make stable pad surface. In this research, urethane polishing pad which is named IC pad(Nitta-Haas Inc.) and has micro pore structure, is studied. Because, this type of pad is the most conventional type.
산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향
배재현,이현섭,박재홍,니시자와 히데키,키노시타 마사하루,정해도,Bae, Jae-Hyun,Lee, Hyun-Seop,Park, Jae-Hong,Nishizawa, Hideaki,Kinoshita, Masaharu,Jeong, Hae-Do 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.