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산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향
배재현,이현섭,박재홍,니시자와 히데키,키노시타 마사하루,정해도,Bae, Jae-Hyun,Lee, Hyun-Seop,Park, Jae-Hong,Nishizawa, Hideaki,Kinoshita, Masaharu,Jeong, Hae-Do 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.