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요통 치료를 위한 경막외강내 스테로이드 투여의 장기 효과
최 훈(Huhn Choe),황정한(Chung Han Whang),이준례(Ju 대한통증학회 1998 The Korean Journal of Pain Vol.11 No.2
N/A Background: Epidural steroid therapy has been well-established for the treatment of sciatica and low back pain. Disappointing results following surgical decompression or discectomy have led to wide trials of corticosteroids injected either systemically or into the intraspinally. Although epidural steroid is known to be very effective in the treatment of the patients with low back pain, few data showed the therapeutic duration of epidural steroid. Methods: We studied 120 patients who were treated with epidural steroid for the treatment of low back pain or sciatica or both. We retrospectively analysed the duration of analgesia, number of injections per each session, and complications. Results: The duration of analgesia ranged from 17 days to 300 days, and the mean duration was 73.7 ±70.5 (SD) days. The mean number of injections per each session was 1.8±1.3 (range: 1 to 12). There were no significant complications with epidural steroid injections. Conclusions: One to three epidural steroid injections at one week interval leads more than two months of pain relief without significant complications.
성김,석호 최,형선 황,Kyung Joong Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.I
Single-, double-, and 50- period SiOx/SiO2 have been prepared on Si wafers by ion beam sputtering deposition and subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. For 50-period SiOx/SiO2 multilayers, the flat-band voltage shift (VFB) of the C-V curves is found to be inversely proportional to the photoluminescence peak wavelength and intensity, which indicates that larger-sized and more dense Si NCs will exhibit a stronger nonvolatile memory. In single-layer devices, a reduction in the tunnel-oxide thickness strongly enhances VFB, and an asymmetry exists between electron and hole storage. The retention time is improved by increasing the thickness of the tunnel oxide rather than the control oxide. The defect states in these devices are considerably reduced by hydrogenation passivation, enhancing VFB in the hole storage. VFB is enhanced on both polarities by reducing the thickness of the center oxide in doubly-stacked devices. A longer retention time is found in the doubly-stacked memory, which seems to result from suppressed charge leakage between the upper NC layer and the substrate due to an energy barrier in the lower NC layer.