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이온 주입과 기판 온도 효과에 의한 Al-1%Si 박막의 Hillock 형성 특성
최창억,이용봉,김정호,Choi, Chang-Auk,Lee, Yong-Bong,Kim, Jeong-Ho 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.1
As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.
고종수(Jong Soo Ko),이대식(Dae-Sik Lee),이명래(Myung Lae Lee),최창억(Chang Auk Choi),김윤태(Youn Tae Kim) 대한기계학회 2002 대한기계학회 춘추학술대회 Vol.2002 No.5
A laterally driven electromagnetic microactuator (LaDEM) is introduced, and a micro-optical switch is<br/> designed and fabricated as an application. LaDEM offers parallel movement of the microactuator to the<br/> silicon substrate surface (in-plane mode). Poly-silicon-on-insulator (poly-SOI) wafers and a reactive ion<br/> etching (RIE) process were used to fabricate high-aspect-ratio vertical microstructures, which allowed the<br/> equipping of vertical micro-mirrors. A fabricated single leaf spring had a width of 1.2 mm, thickness of 16 mm,<br/> and length of 800 mm. The resistance of the fabricated leaf spring for the optical switch was 5 W. The<br/> deflection of the leaf spring started to profoundly increase at about 400 mA, and it showed snap-through<br/> phenomenon over that current value. Owing to the snap-though phenomenon, a large deflection of 60 mm was<br/> detected at 566 mA.