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김준식,정호균,최병덕,이기용,이준신,Kim, Jun-Sik,Chung, Ho-Kyoon,Choi, Byoung-Deog,Lee, Ki-Yong,Yi, Jun-Sin 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4
Poly silicon TFT requires high quality dielectric film; conventional method of growing silicon dioxide needs highly hazardous chemicals such as silane. We have grown high quality dielectric film of silicon dioxide using non-hazardous chemical such as TFOS and ozone as reaction gases by APCVD. The films grown were characterized through C-V curves of MOS structures. Conventional APCVD requires high temperature processing where as in the process of current study, we developed a low temperature process. Interface trap density was substantially decreased in the silicon surface coated with the silicon dioxide film after annealing in nitrogen ambient. The interface with such low trap density could be used for poly silicon TFT fabrication with cheaper cost and potentially less hazards.
이정인(Jeoung-In Lee),황성현(Sung-hyun Hwang),정성욱(Sung-wook Jung),장경수(Kyung-Soo Jang),이광수(Kwang-Soo Lee),정호균(Ho-kyoon Chung),최병덕(Byoung-Deog Choi),이기용(Ki-Yong Lee),이준신(Jun-Sin Yi) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.10
Recently, poly-Si TFT-LCD starts to be mass produced using excimer laser annealing (ELA) poly-Si. The main reason for this is the good quality poly-Si and large area uniformity. We report the influence of channel length and width on poly -Si TFTs performance. Transfer characteristics of n-channel poly-Si thin film transistors fabricated on polycrystalline silicon (poly-Si) thin film transistors (TFTs) with various channel lengths and widths of 2-30 ㎛ has been investigated. In this paper, we analyzed the data of n -type TFTs. We studied threshold voltage (VTH), on/off current ratio (I<SUB>ON</SUB>/I<SUB>OFF</SUB>), saturation current (I<SUB>DSAT</SUB>), and transconductance (g<SUB>m</SUB>) of n-channel poly-Si thin film transistors with various channel lengths and widths.
고지수(Ko, Ji-Soo),정한욱(Jeong, Han-Wook),공대영(Gong, Dae-Yeong),이원백(Lee, Won-Baek),김광열(Kim, Kwang-Ryul),신성욱(Shin, Sung-Wook),박홍진(Park, Hong-Jin),최병덕(Choi, Byoung-Deog) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.06
One of the most important issues of crystalline silicon solar cell is minimizing reflectance at the surface. Laser texturing is an isotropic process that will sculpt the surface of a silicon wafer, regardless of its crystallographic orientation. We investigated surface texturing process using Nd-YAG laser (lambda=1064 nm) on multi-crystalline silicon wafer. Removal of slag formed after the laser process was performed using acid solution (HF : HNO₃ : CH₃COOH : DI water). The reflectance and carrier lifetime of the samples were measured and analyzed using UV-Vis spectrophotometer and carrier lifetime tester. It was found that the minimum reflectance of the samples was 16.39% and maximum carrier life time was 21.8;{mu}s.
Laser texturing on the surface for improvement of multi-crystalline solar cells
김태훈(Kim, Tae-Hoon),김선용(Kim, Sun-Young),고지수(Ko, Ji-Soo),박현호(Park, Hyun-Ho),김광열(Kim, Kwang-Ryul),조창현(Jo, Chang-Hyun),신성욱(Shin, Sung-Wook),최병덕(Choi, Byoung-Deog) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.11
The solar cell is in the spotlight as a future green energy source. In the solar cells based on silicon wafer, the improvement of efficiency is one of crucial issues. One of techniques for high efficiency is texturing on the surface of solar cells. We studied the laser texturing on the surface of multi-crystalline silicon solar cells. The laser texturing followed by chemical etching is adequate for the multi-crystalline structure which have random crystallographic directions. We used the fiber laser for texturing and the SiNx as a masking layer for etching process. We investigated the shapes of holes for texturing in the various laser power conditions and analyzed the holes after removal of thermal damages caused by laser ablation through a 3D profiler.