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지홍구,오대곤,김도영,황대환,차재선,김정태,최윤호,Ji, H.K.,Oh, D.K.,Kim, D.Y.,Hwang, D.H.,Cha, J.S.,Kim, J.T.,Choi, Y.H. 한국전자통신연구원 2019 전자통신동향분석 Vol.34 No.2
Korea has pursued economic development based on ICT through R&D policy incorporating CDMA. However, the future society of the Fourth Industrial Revolution is expected to include a new type of industrial development that combines ICT with the non-ICT industry, making it impossible to secure national competitiveness without the source technology of the ICT industry. Therefore, in this thesis, we examine the ICT industry and ICT R&D policy from the point of view of the current ICT as a future source technology source of Korea, and identify strategies to determine ICT as a future technology source through a SWOT analysis.
오대곤,지홍구,김영호,강만구,최병건,이일우,이병탁,김병운,홍태철,성단근,Oh, D.K.,Ji, H.G.,Kim, Y.H.,Kang, M.K,Choi, B.G,Lee, I.W.,Lee, B.T.,Kim, B.U.,Hong, T.C.,Sung, D.K. 한국전자통신연구원 2018 전자통신동향분석 Vol.33 No.4
On a global level, the energy problem is a very important policy topic, particularly at a time when the nation relies on imports for more than 95% of its energy demand. The starting point of an energy policy should be in line with the international community's concern and cooperation regarding climate warming, and the logic of the new policy on renewable energy expansion in Korea, the pre-developed energy sector, and policy of deserting coal all support this aspect. In particular, to accommodate the rapid urbanization of mankind, the key words of the 4th Industrial Revolution are linking energy to IoT, artificial intelligence, block chain, cloud, and big data.
5G 이동통신을 위한 GaN RF 전자소자 및 집적회로 기술 동향
이종민,민병규,장우진,지홍구,조규준,강동민,Lee, J.M.,Min, B.G.,Chang, W.J.,Ji, H.G.,Cho, K.J.,Kang, D.M. 한국전자통신연구원 2021 전자통신동향분석 Vol.36 No.3
As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.