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구형 집속 빔 핵융합 장치에서 그리드 음극 구조의 최적 설계
주흥진,박정호,황휘동,최승길,고광철,Ju, Heung-Jin,Park, Jeong-Ho,Hwang, Hwui-Dong,Choi, Seung-Kil,Ko, Kwang-Cheol 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.4
Neutron production rate in spherically convergent beam fusion(SCBF) device as a portable neutron source strongly depends on the ion current and the grid cathode structure. In this paper, as the process of design and analysis, Design of Experiment(DOE) based on the results by Finite Element Method-Flux Corrected Transport(FEM-FCT) method is employed to calculate the ion current. This method is very useful to find optimal design conditions in a short time. Number of rings, radius of rings, and distance between the grid cathode and center are selected as control factors. From the results in the optimized model, the higher ion current is calculated and deeper potential well is also observed.
SCBF 장치에서 이온전류에 대한 포텐셜 우물 구조의 영향
주흥진,박정호,고광철,Ju, Heung-Jin,Park, Jeong-Ho,Ko, Kwang-Cheol 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.5
SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.
주흥진,김봉석,황휘동,박정호,최승길,고광철,Ju, Heung-Jin,Kim, Bong-Seok,Hwang, Hui-Dong,Park, Jeong-Ho,Choi, Seung-Kil,Ko, Kwang-Cheol 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.9
We have proposed a new configuration on the cathode structure to improve a neutron yield without the application of external ion sources in an inertial electrostatic confinement (IEC) device. A neutron yield in the IEC device is closely related to the potential well structure generated inside the cathode and is proportional to the ion current. Therefore, the application of a double grid cathode structure to the IEC device is expected to produce a higher ion current and neutron yield than at a single grid cathode due to a high electric field strength generated around the cathode. These possibilities were verified as compared with the ion current calculated from both shape of the single and double grid cathode. Additionally from the results of ion's lives and trajectories examined at various outer cathode voltages and grid cathode configurations by using particle simulations, the validity of the double grid cathode was confirmed.
SCBF 장치에서 그리드 음극 구조의 영향에 대한 입자 시뮬레이션
주흥진,박정호,고광철,Ju, Heung-Jin,Park, Jeong-Ho,Ko, Kwang-Cheol 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.8
In 2-dimensional SCBF (Spherically Convergent Beam Fusion) device, the effect on neutron production rate of the grid cathode geometry was simulated. The motion of Particles was tracked using Monte Carlo Method including the atomic and molecular collision processes and potential distribution was calculated by Finite Element Method, Main processes of the discharge were the ionization of $D_2$ by fast $D_2^+\;ion$. As the number of cathode rings was small and the size of grid cathode decreased, the ion current increased and neutron production rate will also increase. The star mode discharge which is a very important characteristic in SCBF device, was confirmed by the ionization position.
절연성능 향상을 위한 가스절연 개폐장치에서의 경사 기능성 재료 스페이서 및 전극 형상 연구
주흥진(Heung-Jin Ju),김봉석(Bong-Seok Kim),고광철(Kwang-Cheol Ko) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
가스 절연 개폐장치(Gas Insulated Switchgear : GIS)의 고체 스페이서에 경사기능성 재료(Functionally Graded Material : FGM)를 적용할 때, 전계의 완화를 예상할 수 있다. 특히, 균일 유전율 분포를 가지는 스페이서에서 양극 근처에 집중된 높은 전계가 FGM 스페이서를 사용할 때, 스페이서와 SF? 가스의 접촉부로 옮겨지며, 그 크기가 완화됨을 확인할 수 있었다[1]. 본 연구에서는 상용 고체 스페이서의 양극 부근에서의 전계 집중을 감소시키기 위해 전극 형상의 최적화를 수행하였다. 최적화 기법으로는 완전계승계획법(Full Factorial Design : FFD)과 결합된 반응표면법(Response Surface Method : RSM)을 이용하였으며, 균일 유전율 스페이서에서 양극 형상을 최적화하였다. 또한 타원형 유전율 분포를 가지는 FGM 스페이서를 이용함으로써, 상용 GIS 모델에 비해 최대 전계가 크게 완화될 수 있음을 확인하였으며, 상용 GIS의 외함부의 크기를 줄여 실제 소형화 가능 여부를 확인하였다.