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이복희(B.H. Lee),정현욱(H.U. Jung),이태형(T.H. Lee),백영환(Y.H. Baek),이동문(D.M. Lee),정동철(D.C. Jung),안창환(C.H. Ahn) 한국조명·전기설비학회 2005 한국조명·전기설비학회 학술대회논문집 Vol.2005 No.11월
This paper describes the touch voltages and potential distributions according to the distance between distribution concrete pole and ground rod when the current is injected to a ground rod through overhead ground wire. Touch voltage is measured in four directions. The touch voltage and ground potential distribution per 1 A are analyzed. The touch voltage was the highest at the ground surface just above the ground rod.
이복희(B.H. Lee),정현욱(H.U.Jung),최종혁(C.H.Choi),조성철(S.C.Cho),백영환(Y.H.Baek),이규선(K.S.Lee),안창환(C.H.Ahn) 한국조명·전기설비학회 2006 한국조명·전기설비학회 학술대회논문집 Vol.2006 No.5월
This paper describes ground surface potential rises and touch voltage. The more soil resistivity of upper layer is lower, the more ground surface potential rise is increased. Ground surface potential rise is increased as the buried depth of ground rod in lowered. Ground surface potential rises were measured in the test site and compared with results by CDEGS program. Touch voltages according to the separation distance of ground rod were measured in four directions. Touch voltages were remarkably changed by separation distance and contact position.
전자식교환기 고장진단 전문가시스템의 지식베이스 모듈 구축
김영곤(Y.G. Kim),정현욱(H.U. Jung),김화수(Hwa-Soo Kim),이성근(Seong Keun Lee) 한국정보과학회 1994 한국정보과학회 학술발표논문집 Vol.21 No.2A
이 논문에서는 TDX-10 전자식교환기 고장진단을 위한 프로토타입 전문가시스템의 지식베이스 모듈의 개념을 기술하고 설계 및 구현시 특징, 절차, 지식표현 기법 및 기대효과를 기술하였다. TDX-10 교환기 고장진단 전문가시스템의 지식베이스 모듈은 규칙 및 객체지향기법을 혼합한 형태로 개발자로 하여금 지식을 효율적으로 표현할 수 있도록 제공되는 Smart Elements라는 전문가시스템 개발도구를 이용하여 PC-486상에서 설계 및 구현하였다.
차세대 레이더용 C-/X-/Ku-대역 GaN 집적회로 기술 동향
안호균,이상흥,김성일,노윤섭,장성재,정현욱,임종원,Ahn, H.K.,Lee, S.H.,Kim, S.I.,Noh, Y.S.,Chang, S.J.,Jung, H.U.,Lim, J.W. 한국전자통신연구원 2022 전자통신동향분석 Vol.37 No.5
GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.