상 변화 메모리 재료 내의 Ga 주입에 미치는 GaGe 스퍼터링 전력의 영향

정순원,이승윤,Jung, Soon-Won,Lee, Seung-Yun 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.5

The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

Pt/LiNbO₃/AlN/Si(100) 구조를 이용한 MFIS 커패시터의 전기적 특성

정순원,김광호,Jung, Soon-Won,Kim, Kwang-Ho 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.12

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

유전 알고리즘을 이용한 퍼지 패턴 매칭 분류기의 설계와 응용

정순원,박귀태,Jung, Soon-Won,Park, Gwi-Tae 대한전자공학회 1996 전자공학회논문지-B Vol.b33 No.1

본 논문에서는 새로운 퍼지 패턴 매칭 분류기(fuzzy pattern matching classifier) 설계 방법을 제안하였다. 기존의 퍼지 패턴 매칭 분류기를 설계함에 있어 분류기의 성능에 결정적인 영향을 미치는 소속 함수 (membership functions)의 모양과 개수에 대한 정확한 정보를 알 수 없었다. 따라서 소속 함수를 구하기 위하여 시행 착오(trial-error)법 혹은 경험에 의존하는(heuristic) 방법이 사용되어 왔다. 그러나 이러한 방법은 다양한 종류의 패턴에 대하여 적용하기에는 한계가 있다. 본 논문에서는 유전 알고리즘을 사용하여 분류 에러를 최소로 줄이는 소속 함수의 적절한 모양과 개수를 찾기 위한 새로운 방법을 제안한다. 유전 알고리즘(genetic algorithms)은 진화라는 생물학적 모델을 기초로한 통계적 알고리즘의 한 부류이다. 이는 여러 함수 최적화 문제에 적용되어 최적 혹은 최적 근처의 해를 찾아 준다. 본 논문에서 유전 알고리즘은 분류 에러에 반비례하는 적합도 함수(fitness function)를 기본으로 소속 함수의 모양과 개수를 결정하는데 쓰인다. 유전 알고리즘에 있어서의 스트링은 소속 함수를 결정하게 되며 인식 결과는 다음 세대의 재생(reproduction) 연산에 영향을 미치게 된다. 제안되는 방법을 타이어 접지면 패턴과 필기체 영문자 인식에 적용하여 보았다. 실험 결과는 본 방법이 유용함을 보여준다. A new design scheme for the fuzzy pattern matching classifier (FPMC) is proposed. in conventional design of FPMC, there are no exact information about the membership function of which shape and number critically affect the performance of classifier. So far, a trial and error or heuristic method is used to find membership functions for the input patterns. But each of them have limits in its application to the various types of pattern recognition problem. In this paper, a new method to find the appropriate shape and number of membership functions for the input patterns which minimize classification error is proposed using genetic algorithms(GAs). Genetic algorithms belong to a class of stochastic algorithms based on biological models of evolution. They have been applied to many function optimization problems and shown to find optimal or near optimal solutions. In this paper, GAs are used to find the appropriate shape and number of membership functions based on fitness function which is inversely proportional to classification error. The strings in GAs determine the membership functions and recognition results using these membership functions affect reproduction of next generation in GAs. The proposed design scheme is applied to the several patterns such as tire tread patterns and handwritten alphabetic characters. Experimental results show the usefulness of the proposed scheme.

Local min/max 연산을 이용한 필기체 숫자의 방향특징 추출

정순원,박중조,Jung, Soon-Won,Park, Joong-Jo 한국융합신호처리학회 2009 융합신호처리학회 논문지 (JISPS) Vol.10 No.1

본 논문에서는 local min/max 연산을 이용한 필기체 숫자의 방향특징 추출 기법을 제안한다. 숫자의 방향특징은 숫자를 이루는 선에서 수평, 수직 및 두 대각방향인 4개 방향의 선들로 구성된 방향선분 영상으로부터 구해진다. Kirsch 마스크를 사용하는 기존의 방향특징 추출기법은 에지형태인 두 겹으로 된 방향선분 영상을 생성하는데 반해 본 논문에서 제시하는 방법은 방향성 수축연산을 사용하여 한 겹으로 된 방향선분 영상을 생성한다. 본 방향성 수축연산을 숫자영상에 적용하기 위해서는 먼저 세선화, 영상 팽창 등의 전처리가 필요하지만 이 방법은 숫자를 이루는 선 자체와 더욱 유사한 형태를 갖는 방향선분을 제공한다. 우리가 구하고자 하는 [$4{\times}4$] 크기인 4개의 방향특징은 4개의 방향선분 영상으로부터 조닝방법을 통해 구해진다. 보다 높은 필기체 숫자인식을 얻기 위해, 본 연구에서는 우리가 제안한 방향특징에 기존의 Kirsch 방향특징과 오목특징을 결합한 다중특징을 사용하였다. 본 숫자 특징에 의한 인식률을 테스트를 위해 오류역전파 알고리즘으로 학습되는 다층퍼셉트론 신경회로망을 인식기로 사용하였으며, Concordia 대학의 CENPARMI 숫자 데이터베이스를 사용하여 실험한 결과 98.35%의 인식률을 얻을 수 있었다. In this paper, we propose a directional feature extraction method for off-line handwritten numerals by using the morphological operations. Direction features are obtained from four directional line images, each of which contains horizontal, vertical, right-diagonal and left-diagonal lines in entire numeral lines. Conventional method for extracting directional features uses Kirsch masks which generate edge-shaped double line images for each direction, whereas our method uses directional erosion operations and generate single line images for each direction. To apply these directional erosion operations to the numeral image, preprocessing steps such as thinning and dilation are required, but resultant directional lines are more similar to numeral lines themselves. Our four [$4{\times}4$] directional features of a numeral are obtained from four directional line images through a zoning method. For obtaining the higher recognition rates of the handwrittern numerals, we use the multiple feature which is comprised of our proposed feature and the conventional features of a kirsch directional feature and a concavity feature. For recognition test with given features, we use a multi-layer perceptron neural network classifier which is trained with the back propagation algorithm. Through the experiments with the CENPARMI numeral database of Concordia University, we have achieved a recognition rate of 98.35%.

UV 센서 응용을 위한 SiC MIS 소자에 관한 연구

구경완(Kyung一Wan Koo),정순원(Soon一Won Jung) 호서대학교 공업기술연구소 2006 공업기술연구 논문집 Vol.25 No.1

In this paper, we propose aluminum nitride(AlN) thin film as gate insulating material instead of SiC )2 on 6H~SiC MIS devices. For quite a low lattice misfit with SiC, AIN is as attractive as new gate insulating material in SiC devices. The fabrication of aluminium nitride (AIN) films directly on 6 H-S 1 ᄂ(0001) substrates by reactive magnetron sputtering method has been performed with rapid thermal annealing at a temperature range 01 ZOO 1000 °C in nitrogen ambient for enhancement of crystallization of films. The structural properties of AIN films on 6H-SiC(0001) by RTA analysed by XRD(X-Ray diffraction). The A1N(0002) peaks was clearly found. The dielectric constant of deposited films was obtained as around 8.4 from the accumulation region of capacitance-voltage curve. It is almost the same value with the bulk AIN. Also, the gate leakage current density of the MIS capacitor was 10 9 A/cm2 order within the electric field of 2 MV/cm. The amount of Djt was evaluated as about 5X1010 eV_1cm at a location of 0.5 eV from the midgap.

탄소섬유 제직기술을 이용한 에너지 절감형 자동차용 시트 발열체 개발

정순원(Soon-Won Jung),김도우(Do-Woo Kim),박동수(Dong Soo Park),한승보(Seung Bo Han),김일중(Il Joong Kim),변승환(Seung Hwan Byun),구경완(Kyung-Wan Koo) 대한전기학회 2017 대한전기학회 학술대회 논문집 Vol.2017 No.7

화학기상증착법으로 성장시킨 산화티타늄 박막의 특성

정순원(Soon-Won Jung),조민재(Min Jea Jho),김광호(Kwang-Ho Kim) 대한전기학회 2019 대한전기학회 학술대회 논문집 Vol.2019 No.7

가요성 알루미늄피 케이블을 이용한 인플렉스 시스템의 개발

정순원(Soon-Won Jung),구경완(Kyung-Wan Koo) 대한전기학회 2009 전기학회논문지 P Vol.58 No.2

The developed in-flex system completed the wiring work with the plug-in connection. To maintain electrical and mechanical stability, and an insulation between the conductors was strengthened by forming a partition. Moreover, the error according to a bad connection was prevented by separating the inlet from the outlet of the electric trace and thus the quick construction become possible. The metal reinforcing material was added outside the upper case and lower case. The fire-resistance efficiency was maximized in order to minimize a damage by the fire. As to the developed system, we found that it takes shorter time to complete installation than the rigid steel conduit wiring work, and that about 25 % of construction cost was saved because the labor costs decrease due to the shorter construction period of time.

조립과 확장이 가능한 반도체 제조용 기판 가열 장치

정순원(Soon-Won Jung),구경완(Kyung-Wan Koo) 대한전기학회 2009 전기학회논문지 P Vol.58 No.1

This research is a new structure of the semiconductor substrate heating apparatus in which the assembly and expansion are possible. The fast thermo-responsive according to the direct heating structure of the heating plate layer adhering closely to the floor side of a substrate and the fast heat loss minimization can be accomplished. Moreover, the contact area of the sheath heater, which is the heating plate layer built-in heating apparatus, is increased, so that it has more heating valid area. There is no problem with the deformation interpreted in the state where it assembles the block of a several of the simulation result structure, the safety, and the stress. In addition, it is confirmed that building a large-size heating block is possible since the temperature deflection of the manufactured plate is lower than the standard value.

엘라스토머 기판상에 제작한 신축성 박막 트랜지스터

정순원(Soon-Won Jung),구재본(Jae Bon Koo),구경완(Kyung-Wan Koo) 대한전기학회 2015 대한전기학회 학술대회 논문집 Vol.2015 No.11