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이재철,전상국,Lee, Jae Chul,Chun, Sang Kook 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.6
The Hall factor in a quantum well structure with X or L-type indirect conduction valleys is calculated for various strain conditions. The two-dimensional constant energy surfaces of occupied valleys are proven to be identical. As a result, the Hall factor depends on the relative direction of occupied valleys to the growth direction, regardless of the number of occupied valleys. This work is widely applicable to the two-dimensional structure with indirect conduction minima for any growth direction and under different strain conditions.
비 중심 Si δ-doping 층을 갖는 GaAs-Al<sub>x</sub>Ga<sub>1-x</sub> 양자우물에서 전계에 따른 전자 분포
최준영,전상국,Choi, Jun-Young,Chun, Sang-Kook 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.1
The electric property in the $GaAs-Al_{x}Ga_{1-x}$ quantum well with the Si ${\delta}-doping$ layer in a non-central position is studied through the effect of the electric field intensity on the electron distribution. The finite difference method is used for the calculation of the subband energy level and its wavefunction. In order to account for the change of the potential energy due to the charged particles, the self consistent method is employed. As the Si ${\delta}-doping$ layer becomes closer to the heterojunction interface, the electrons less affected by Coulomb scattering are greatly increased under the external electric field. Therefore, the high speed device is suggested due to the fact that the high mobility electrons can be increased by positioning the ${\delta}-doping$ layer in the quantum well and by applying the electric field intensity.
간접천이대를 갖는 2차원 소자에서 성장방향에 따른 Hall 인수의 이방성 연구
김종구,이재철,전상국,Kim, Jong Gu,Lee, Jae Chul,Chun, Sang Kook 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.7
The Hall factor in a two-dimensional device with indirect conduction valleys is calculated for several growth on various strain conditions. In the [001] or [111] growth direction, the two-dimensional constant energy surfaces of occupied valleys are shown to be isotropically distributed. However, in the [110] growth direction, the distribution of occupied valleys on the plane is not isotropic. This fact is the reason for the anisotropic Hall factor on the sample plane.
혼합물반도체에서 단위격자 크기 설정에 따른 비극성 Optical 포논산란에 대한 연구
천대명,김태현,전상국,Chun, Dae-Myung,Kim, Tae-Hyun,Chun, Sang-Kook 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.10
A linear spring model, where the interactions among atoms are assumed to be isotropic and elastic, is employed for the study of non-polar optical phonon scattering in the valence band of alloy semiconductors. The force equations of n atoms are used in the spring model for the consideration of the random distribution of constituent atoms in an alloy semiconductor. When the number of atoms in a unit cell is assumed to be two based on the experimental result, the optical deformation potent is valid for compound semiconductors as well as alloy semiconductors.
Al<sub>2</sub>Ga<sub>x-1</sub>A<sub>3</sub>-GaA<sub>s</sub> 양자우물에서 시도함수에 따른 결합에너지
이건영,이무상,전상국,Lee, Kun-Young,Lee, Mu-Sang,Chun, Sang-Kook 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.9
The binding energy in the n-type $GaAs/Al_xGa_{1-x}As$ quantum well is calculated. The shooting method, modified from the finite difference method, is used for the calculation of the subband energy level and its wave function. In order to account tot the change of the potential energy due to the charged particles, impurities and electrons, the self consistent method is employed. The wave function used for the calculation of the binding energy is assumed to be composed of the envelope function and hydrogenic 1s function. Then, the binding energies calculated by taking into account lot two different types of the hydrogenic 1s function are compared.