고휘도 녹색 인광 OLED 제작에서 전자수송층 처리

장지근,김원기,신상배,신현관,Jang, Ji-Geun,Kim, Won-Ki,Shin, Sang-Baie,Shin, Hyun-Kwan 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.3

New devices with structure of ITO/2TNATA/NPB/TCTA/CBP:7%Ir(ppy)$_3$/BCP/ETL/LiF/Al were proposed to develop high luminous green phosphorescent organic light emitting diodes and their electroluminescent properties were evaluated. The experimental devices were divided into two kinds according to the material ($Alq_3$ or SFC137) used as an electron transport layer (ETL). Luminous intensities of the devices using $Alq_3$ and SFC137 as electron transport layers were 27,500 cd/$m^2$ and 51,500 cd/$m^2$ at an applied voltage of 9V, respectively. The current efficiencies of both devices were similar as 12.6 cd/A under a luminance of 10,000 cd/$m^2$, while showed slower decay in the device with SFC137 as an ETL according to the further increase of luminance. Current density and luminance of the device with SFC137 as an electron transport layer were higher at the same voltage than those of the device with $Alq_3$ as an ETL.

고효율 $CBP:Ir(ppy)_3$-PhOLEDs의 제작과 특성 연구

장지근,신상배,신현관,안종명,장호정,유상욱,Jang, Ji-Geun,Shin, Sang-Baie,Shin, Hyun-Kwan,Ahn, Jong-Myoung,Chang, Ho-Jung,Ryu, Sang-Ouk 한국마이크로전자및패키징학회 2008 마이크로전자 및 패키징학회지 Vol.15 No.2

고효율 녹색 인광 유기발광다이오드를 개발하기 위해 소자 구조를 ITO/2-TNATA/NPB/TCTA/CBP:$7%Ir(ppy)_3$/BCP/SFC-137/LiF/Al로 설계 제작하고 그 전계발광 특성을 평가하였다. 소자 제작에서 발광 호스트의 두께를 $150{\AA}{\sim}350{\AA}$ 범위로 변화시켜, 전계발광 특성을 비교해 본 결과, CBP두께가 약 $300{\AA}$ 부근일 때 가장 우수한 휘도 특성이 얻어졌다 전류 효율은 CBP두께가 $300{\AA}{\sim}350{\AA}$범위일 때 거의 포화되어 최대로 나타났다. $CBP(300{\AA}):7%Ir(ppy)_3-EML$ 층을 갖는 PhOLED(phosphorescent organic light emitting diode)의 전류 밀도, 휘도, 그리고 전류 효율은 10V의 인가전압에서 각각 $40mA/cm^2,\;10000cd/m^2$, 25cd/A로 나타났다. 또한 이 소자의 최대 전류효율은 $160cd/m^2$의 휘도 상태에서 40.5cd/A로 나타났다. 발광 스펙트럼은 512nm의 중심 파장과 약 60nm의 FWHM(Full Width Half Maximum)을 나타내었으며, CIE (Commission Internationale de I'Eclairage)도표 상에서 색 좌표는 (0.28,0.63)으로 나타났다. New devices with the structure of ITO/2-TNATA/NPB/TCTA/CBP:$7%Ir(ppy)_3$/BCP/SFC-137/LiF/Al were designed and fabricated to develop high efficiency green phosphorescent organic light emitting diodes and their electroluminescence properties were evaluated. Among the devices with different thicknesses of CBP in a range of $150{\AA}{\sim}350{\AA}$, the best luminance was obtained in the device with $300{\AA}$-thick CBP host. Nearly saturated current efficiencies indicates that the maximum efficiency value can be obtained with CBP thicknesses of $300{\AA}{\sim}350{\AA}$. The current density, luminance, and current efficiency of the PhOLED(phosphorescent organic light emitting diode) with $CBP(300{\AA}):7%Ir(ppy)_3-emissive$ layer at an applied voltage of 10V were $40mA/cm^2,\;10000cd/m^2$, and 25 cd/A, respectively. The maximum current efficiency was 40.5cd/A under the luminance of $160cd/m^2$. The peak wavelength and FWHM(full width at half maximum) in the electroluminescence spectral were 512nm and 60nm, respectively. The color coordinate was (0.28, 0.63) on the CIE (Commission Internationale de I'Eclairage) chart.

PVP-기반 유기 절연막 형성과 OTFT 제작

장지근,서동균,임용규,Jang, Ji-Geun,Seo, Dong-Gyoon,Lim, Yong-Gyu 한국재료학회 2006 한국재료학회지 Vol.16 No.5

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

Web-패턴 Si 광다이오드의 감도특성 개선

장지근,이상열,김장기,Jang, Ji-Geun,Lee, Sang-Yeol,Kim, Jang-Gi 한국재료학회 2001 한국재료학회지 Vol.11 No.4

광이 입사되는 수광면에 그물망(web)모양의 얕은 $P^{+}$ -diffusion 영역을 갖는 새로운 구조의 적색광 검출 Si pin photodiode를 제작하고 그 특성을 분석하였다. 제작된 소자의 전기.광학적 특성을 -5V의 동작전압에서 측정한 결과, 접합 커패시턴스와 암전류는 각각 4pF와 235pA로 나타났으며 670nm의 중심파장을 갖는 1.6㎼의 입사광 전력 아래에서 광신호 전류와 감도특성은 각각 0.48$\mu\textrm{A}$와 0.30A/W로 나타났다. 제작된 소자는 종래의 circular type photodiode에 비해 개선된 감도 특성을 나타내었으며 670~700nm의 파장영역에서 최대 spectral response를 보였다. 본 연구에서의 web-patterned Si photodiode는 red light optics 응용에서 디지털 신호처리시 우수한 신호분리 능력을 나타낼 것으로 기대된다. We have fabricated and evaluated a new Si pin photodiode for red light detection with the web patterned $p^{+}$ -shallow diffused region in the light absorbing area. From the measurements of electro-optical characteristics under the bias of -5V, the junction capacitance of 4pF and the dark current of 235pA were obtained. When the 1.6㎼ optical power with peak wavelength of 670nm was incident on the device, the optical signal current of 0.48$\mu\textrm{A}$ and the responsivity of 0.30A/W were obtained. The fabricated device showed the improved sensitivity compared to the conventional circular type device and the maximum spectral response in a spectrum of 670~700nm. The web-patterned Si photodiode can be expected to have the good discrimination characteristics between digital signals in the application of red light optics.

$Alq_3$-C545T시스템을 이용한 고성능 녹색 유기발광다이오드의 제작과 특성 평가

장지근,김희원,신세진,강의정,안종명,임용규,Jang Ji-Geun,Kim Hee-Won,Shin Se-Jin,Kang Eui-Jung,Ahn Jong-Myong,Lim Yong-Gyu 한국마이크로전자및패키징학회 2006 마이크로전자 및 패키징학회지 Vol.13 No.1

[ $Alq_3$ ]-C545T 형광 시스템을 이용하여 녹색 발광 고성능 OLED를 제작하고 그 특성을 평가하였다. 소자 제작에서 ITO(Indium Tin Oxide)/glass 위에 정공 주입층으로 2-TNATA [4,4',4'-tris(2-naphthyl-phenyl-phenylamino)-triphenylamine]를, 정공수송층으로 NPB [N,N-bis(1-naphthyl)- N,N'-diphenyl-1,1'-biphenyl-4,4-diamine]를 진공 증착하였다. 녹색 발광층으로는 $Ahq_3$를 호스트로, 545T [10-(2-benzo-thiazolyl)-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]/benzopyrano[6,7,8-ij]-quinolizin-11-one]를 도펀트로 사용하였다. 또한, 전자 수송층으로는 $Alq_3$를 전자 주입층으로는 LiF를 사용하여 ITO/2-TNATA/NPB/$Alq_3$:C-545T/$Alq_3$/LiF/Al 구조의 저분자 OLED를 제작하였다. 본 실험에서 제작된 녹색 OLED는 521 nm의 중심 발광 파장을 가지며, CIE(0.29, 0.65)의 색순도, 그리고 12V의 동작전압에서 7.3 lm/W의 최대 전력효율을 나타내었다. The green emitting high performance OLEDs using the $Alq_3$-C545T fluorescent system have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, green color emission layer was deposited using $Alq_3$ as a host material and C-545T[10-(2-benzothiazolyl)-1,1,7,7- tetramethyl-2,3,6,7-tetrahydro-1H,5H,11H-[1]/benzopyrano[6,7,8-ij]-quinolizin-11-one] as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/$Alq_3$:C545T/$Alq_3$/LiF/Al were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Green OLEDs fabricated in our experiments showed the color coordinate of CIE(0.29, 0.65) and the maximum power efficiency of 7.3 lm/W at 12 V with the peak emission wavelength of 521 nm.

Stacked GDI602(691)/GDI602(Rubrene) 형광층을 갖는 2-파장 유기발광소자

장지근,장호정,오명환,강정원,이준영,공명선,이영관,김희원,Jang, Ji-Geun,Chang, Ho-Jung,Oh, Myung-Hwan,Kang, Jung-Won,Lee, Jun-Young,Gong, Myoung-Seon,Lee, Young-Kwan,Kim, Hee-Won 한국재료학회 2007 한국재료학회지 Vol.17 No.4

A new organic light emitting device(OLED) with two peak wavelength(blue and yellow) emission was fabricated using the selective doping in a single fluorescent host , and its electrical and optical characteristics were investigated. The fabricated device showed the luminance and efficiency of 1600 $Cd/m^2$ and 2.4 Im/W under the applied voltage of 10V, respectively. And its electroluminescent spectra had two peak wavelengths of 470nm and 560nm emitting bluish white light. The OLED with dual wavelength emission in this experiment is likely to be developed as a white OLED with simpler fluorescent system than conventional devices.

GDI 602/Rubrene을 이용한 황색 OLED의 제작과 특성 분석

장지근,김희원,Jang, Ji-Geun,Kim, Hee-Won 한국마이크로전자및패키징학회 2006 마이크로전자 및 패키징학회지 Vol.13 No.4

The yellow emitting OLED using GDI602:Rubrene(10%) material has been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)-triphenyl-amine] as a hole injection material and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl -4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, yellow emission material was deposited using GDI602 as a host material and Rubrene(10%) as a dopant. Finally, small molecular OLED with the structure of $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ was obtained by in-situ successive deposition of $Alq_{3}$, LiF and Al as the electron transport material, electron injection material and cathode. The yellow OLED fabricated in our experiments showed the color coordinate of CIE(0.50, 0.49), the luminance of $2300\;Cd/m^{2}$ and the power efficiency of 0.7 lm/W at 10 V with the peak emission wavelength of 562 nm. GDI602:Rubrene(10%) 형광 시스템을 이용하여 황색 발광 OLED를 제작하고 그 특성을 평가하였다. 소자 제작에서 ITO/glass 위에 정공 주입층으로 2-TNATA[4,4',4'-tris(2-naphthylphenyl-phenyl-amino)-triphenylamine]를, 정공 수송층으로 NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4-diamine]를 진공 증착하였다. 황색 발광층으로는 GDI602를 호스트로, Rubrene를 도펀트로 사용하였다. 또한, 전자 수송층으로는 $Alq_{3}$를, 전자 주입층으로는 LiF를 사용하여 $ITO/2-TNATA/NPB/GDI602:Rubrene(10%)/Alq_{3}/LiF/Al$ 구조의 저분자 OLED를 제작하였다. 본 실험에서 제작된 황색 OLED는 562nm의 중심 발광 파장을 가지며, CIE(0.50, 0.49) 색순도, 그리고 10V의 동작전압에서 $2300\;Cd/m^{2}$ 휘도와 0.7 lm/W의 전력 효율을 나타내었다.

유기 태양전지의 개발 현황과 기술 과제

장지근,박병민,임성규,장호정,Jang, Ji Geun,Park, Byung Min,Lim, Sungkyoo,Chang, Ho Jung 한국재료학회 2014 한국재료학회지 Vol.24 No.8

Serious environmental problems have been caused by the greenhouse effect due to carbon dioxide($CO_2$) or nitrogen oxides($NO_x$) generated by the use of fossil fuels, including oil and liquefied natural gas. Many countries, including our own, the United States, those of the European Union and other developed countries around the world; have shown growing interest in clean energy, and have been concentrating on the development of new energy-saving materials and devices. Typical non-fossil-fuel sources include solar cells, wind power, tidal power, nuclear power, and fuel cells. In particular, organic solar cells(OSCs) have relatively low power-conversion efficiency(PCE) in comparison with inorganic(silicon) based solar cells, compound semiconductor solar cells and the CIGS [$Cu(In_{1-x}Ga_x)Se_2$] thin film solar cells. Recently, organic cell efficiencies greater than 10 % have been obtained by means of the development of new organic semiconducting materials, which feature improvements in crystalline properties, as well as in the quantum-dot nano-structure of the active layers. In this paper, a brief overview of solar cells in general is presented. In particular, the current development status of the next-generation OSCs including their operation principle, device-manufacturing processes, and improvements in the PCE are described.

Si 기판상에 DC 마그네트론 스퍼터링방식에 의한 Pt(200) 박막의 배향성장

장지근,김민영,박용익,장호정,Jang, Ji-Geun,Kim, Min-Yeong,Park, Yong-Ik,Jang, Ho-Jeong 한국재료학회 1999 한국재료학회지 Vol.9 No.3

DC마그네트론 스퍼터링 방식으로 $Ti/SiO_2$/Si 구조 위에 Pt(200) 박막을 배향 성장시키기 위해 증착조건(스퍼터링 가스의 종류와 압력, 기판의 온도)과 후속열처리(RTA, Furnace annealing)에 따른 Pt 박막의 전기, 결정학적 특성을 조사하였다. 실험결과, 20mTorr의 Ar+O$_2$(20%)의 혼합가스 분위기에서 기판온도를 $500^{\circ}C$로 유지하여 Pt박막을 증착하고$ 600^{\circ}C$에서 30초간 급속 열처리를 실시한 경우, 90% 이상의 결정 배항도를 갖는 Pt(200) 박막을 제작할 수 있었다. 제작된 Pt(200) 박막은 $30~40\mu$Ω.cm의 낮은 전기저항율과 우수한 열적 안정성을 나타내었으며$ 600^{\circ}C$의 고온에서 장시간 열처리를 실시하여도 전기저항율이나 우선 배향성의 변화, 박막내 미세 결함 및 열적응집현상 등이 발생되지 않았다.

GDI 호스트-도펀트 형광체를 이용한 청색 OLED의 제작과 특성 평가

장지근,신세진,강의정,김희원,장호정,오명환,김영섭,이준영,공명선,이영관,Jang, Ji-Geun,Shin, Se-Jin,Kang, Eui-Jung,Kim, Hee-Won,Chang, Ho-Jung,Oh, Myung-Hwan,Kim, Young-Seop,Lee, Jun-Young,Gong, Myoung-Seon,Lee, Young-Kwan 한국재료학회 2006 한국재료학회지 Vol.16 No.4

The blue emitting OLEDs using GDI host-dopant phosphors have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4'-tris(2-naphthylphenyl-phenylamino)- triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium thin oxide)/glass substrate by vacuum evaporation. And then, blue color emission layer was deposited using GDI602 as a host material and GDI691 as a dopant. Finally, small molecule OLEDs with structure of ITO/2-TNATA/NPB/GDI602:GDI691/Alq3/LiF/Al were obtained by in-situ deposition of Alq3, LiF and Al as the electron transport material, electron injection material and cathode, respectively. Blue OLEDs fabricated in our experiments showed the color coordinate of CIE(0.14, 0.16) and the maximum power efficiency of 1.1 lm/W at 11 V with the peak emission wavelength of 464 nm.