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드레인오프셋트 다결정실리콘 박막트랜지스터의 누설전력 해석
이인찬,김정규,마대영 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.2
Poly-Si TFT's(Polysilicon thin filmtransistors) have been actively studied due to their applications in active matrix liquid crystal displays and active pull-up devices of CMOS SRAM's. For such applications, the leakage current has to be in the range of sub-picoampere. However, poly-Si TFT's suffer from anomalous high leakage currents, which is attributed to the emission of the traps present at gain boundaries in the drain junction. The leakage current has been analyzed by the field emission via grain-boundary traps and thermionic field emission over potential barrier located at the grain boundary. We found that the models proposed before are not consistent with the experimental results at far as drain-offset poly-Si TFT's we fabricated concern. In this paper, leakage current of drain-offset poly-Si TFT's with different offset lengths was studied. A conduction model based on the thermionic emission of the tunneling electrons is developed to identify the leakage mechanism. It was found that the effective grain size of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.
Oxide-Nitride-Oxide막을 게이트 절연막으로 사용하여 제조한 다결정실리콘 박막트랜지스티의 특성
이인찬,마대영 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.12
HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.
공기 차단막과 청정 공기 공급을 통한 가림막 없는 미세먼지 차단 마스크 설계 및 IoT 앱
이인찬,심민수,이준우,정윤현,최원국,신승원,임덕신 대한기계학회 2020 기술과 교육 Vol.8 No.1
미세먼지가 점점 심각해짐에 따라 마스크는 우리 생활에 필수적인 요소가 되었다. 하지만 코와 입을 덮는 전형적인 마스크는 야외에서 근무하는 경찰관들에게는 적합하지 않다. 이 연구에서는 Air-shield와 Air-clean zone을 만들어줌으로써 새로운 컨셉의 마스크를 만드는 것을 목표로 하였다. 난류제트 이론을 기반으로 하고, 인체 치수를 고려하여 슬릿을 설계하였다. CFD 분석과 실험을 통해서 새로 설계한 마스크의 효과를 검증하였다. 또한, 사용자를 고려하여 인체공학적인 제품을 제작하였고, IoT 어플리케이션에 대한 콘셉트를 제안하였다. Because fine dust is getting worse, the mask becomes essential in our daily life. However, typical mask which completely covers the nose and mouth is not comfortable, especially for the police officer who works outside for a long time. In this research, we are planning to make a new concept mask by forming Air-shield and Air-clean zone. The slit is designed based on turbulence jet theory and considering anthropometric dimensions. We also tried to provide effectiveness of the mask using CFD analysis and experiment. Additionally, we design ideal product and IoT app concept by considering the actual users.