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- 저자 : 이상욱 ( Sang Wuk Lee ) (검색결과 3 건)
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고온, 고전압 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드의 제작 및 전기적 특성 연구
이호승,이상욱,신동혁,박현창,정웅,Lee, Ho-Seung,Lee, Sang-Wuk,Shin, Dong-Hyuk,Park, Hyun-Chang,Jung, Woong 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.11
본 논문에서는 nickel/silicon carbide(Ni/SiC) 접합에 의한 Schottky 다이오드를 제작하고, 그 전기적 특성을 조사하였다. Ni/4H-SiC의 경우, 산화막 모서리 단락을 하였을 때 상온에서 973V의 역방향 항복전압이 측정되었으며 이는 모서리 단락되지 않은 Schottky 다이오드의 역방향 항복전압 430V에 비해 매우 높았다. Ni/6H-SiC Schottky 다이오드의 경우, 산화막으로 모서리 단락시켰을 때와 시키지 않았을 때의 역방향 항복전압은 각각, 920V와 160V 였다. 고온에서의 소자 특성도 매우 좋아서 Ni/4H-SiC Schottky 다이오드와 Ni/6H-SiC Schottky 다이오드 모두 300℃까지 전류 특성의 변화가 거의 없었으며 550℃에서도 양호한 정류 특성을 보였다. 상온에서의 Schottky barrier height와 이상인자(ideality factor) 및 specific on-resistance는 Ni/4H-SiC의 경우는 1.55eV, 1.3, 3.6×10/sup -2/Ω·㎠이었으며 Ni/6H-SiC Schottky 다이오드의 경우에 1.24eV, 1.2, 2.6×10/sup -2Ω·㎠/로 나타났다. 실험 결과 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드 모두 고온, 고전압 소자로서 우수한 특성을 나타냄이 입증되었다. Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..
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간세포암 환자의 발생원인에 따른 말초혈액의 T 세포 아형과 자연살해세포능의 비교
허진욱,최바울,임현정,김수홍,김은석,윤병철,한병훈,이상욱 고신대학교 의학부 2003 高神大學校 醫學部 論文集 Vol.18 No.1
Backgrounds : Many cancer patients, such as Hepatocellular carcinoma(HCC), have a compromised cellular immune system. Several lympocytes subpopulations are involved in immunosurveillance against tumors. We try to evaluate on alteration of peripheral T cell subsets, NK cell and NK cell activity in patients with HCC. Materials and Method : Our study contain 257 patients with chronic liver disease. Of the 257 patients, 147 patients were chronic hepatitis, 44 patients were liver cirrhosis, 66 patients were Hepatocellular carcinoma. We distributed these patients to 3 groups due to cause, chronic hepatitis B (1st group, n=183), chronic hepatitis C (2nd group, n=52), alcoholic liver disease(3rd group, n=22). This study analysis ratio of CD3+, CD4+ CD8+, CD56+ T cell and NK cell activity. Results : The percentage of CD3+ and CD8+ cells were significantly decreased in LC and HCC groups. The activity of NK cells was significantly decreased in HCC than hepatitis group in HBV group. But not different in HCV and alcohol groups. NK cell and NK cell activity were significant decreased in HCC of younger patients (below 40 years) than older patients (above 60 years). Conclusions : Our study showed HCC was altered cellular immune system and decreased activity of NK cells. On the basis of this results, it can be suggested that decreased activity of NK cells according to age may be related to differnce of common age, prognosis and response of immune therapy.
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