CVD로 제작된 SiO₂ 산화막의 투습특성

이붕주,신현용,Lee, Boong-Joo,Shin, Hyun-Yong 한국전자통신학회 2010 한국전자통신학회 논문지 Vol.5 No.1

본 논문에서는 유기발광다이오드 적용을 위한 보호막 혹은 barrier 적용을 위하여 화학증착방법(CVD)를 이용한 실리콘 산화막을 형성하고, 산화막의 특성에 영향을 미치는 공정조건을 변화시켰다. 이로부터 HDP-CVD를 활용한 $SiO_2$박막 증착을 위한 최적의 공정조건은 $SiH_4:O_2$=30:60[sccm]유량, 소스와 기판과의 거리가 70 [mm], 기판에 Bias를 가하지 않은 조건인 경우 8~10[mtorr] 공정압력에서 매우 안정된 플라즈마 형성이 가능한 최적의 공정조건을 얻었다. 얻어진 공정조건으로 제작된 $SiO_2$산화막의 모콘테스트를 통한 투습율(WVTR)을 조사한 결과 2.2 [$g/m^2$_day]값으로 HDP-CVD로 제작된 $SiO_2$산화막은 유기발광다이오드용 보호막으로의 적용이 어려울 것으로 생각된다. In this paper, we have fabricated $SiO_2$ oxidation thin films by HDP-CVD(high density plasma-chemical vapor deposition) method for passivation layer or barrier layer of OLED(organic light emitting diode). We have control and estimate the deposition rate and relative index characteristics with process parameters and get optimized conditions. They are gas flow rate($SiH_4:O_2$=30:60[sccm]), 70 [mm] distance from source to substrate and no-bias. The WVTR(water vapor transmission rate) is 2.2 [$g/m^2$_day]. Therefore fabricated thin film can not be applied as passivation layer or barrier layer of OLED.

Ni-Cr-Al-Cu계 박막저항의 전기적 특성

이붕주,차성익,김철수,한정인,김종택,이덕출 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.4

In this work, we made the precision thin film resistors of NiCr alloy (74wt%Ni-f18wt%Cr-4wt%Al-4wt%Cu) using DC/RF magnetron sputtering method and studied the sheet resistance and TCR(Temperature Coefficient of Resistance) etc... of the Ni-Cr-Al-Cu alloy thin film according to the change by annealing treatment to 400$\^{C}$ in air and nitrogen atmosphere and the change(power, pressure, substrate temperature) of sputtering process.

낮은 저항온도계수를 갖는 박막 저항체 제작 및 신뢰성 특성 평가

이붕주,Lee, Boong-Joo 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.4

The Ni/Cr/Al/Cu (51/41/4/4 wt%) thin films were deposited by using DC magnetron sputtering method for the application of the resistors having low TCR (temperature coefficients of resistance) and high resistivity from the former printed-results[3]. The TCR values measured on the as-deposited thin film resistors were less than ${\pm}10\;ppm/^{\circ}C$ and $-6{\sim}+1\;ppm/^{\circ}C$ after annealing and packaging process. The TCR values were $-3{\sim}1\;ppm/^{\circ}C$ (ratio of variation : about 0.02 %) and $-30{\sim}20\;ppm/^{\circ}C$ (ratio of variation : about $0.5{\sim}1\;%$) for the thermal cycling and PCT (pressure cooker test), respectively. It was confirmed that the reliability properties of the thin film resistor were good for electronic components.

전극 구조에 따른 유기 트랜지스터 특성

이붕주,Lee, Boong-Joo 한국전자통신학회 2013 한국전자통신학회 논문지 Vol.8 No.1

본 논문에서는 유기박막트랜지스터용 절연막에 활용코자 플라즈마 중합방법을 이용하여 PMMA 절연막을 제작하였다. 유기트랜지스터 성능향상을 위해 전극구조에 따른 특성을 파악하고자 트랜지스터의 이동도 및 출력특성을 본결과, 상부전극구조의 경우 최대 이동도는 $8{\times}10^{-3}[cm^2V^{-1}s^{-1}]$을 보이고 하부전극구조의 경우 $2{\times}10^{-4}[cm^2V^{-1}s^{-1}]$의 낮은 이동도 값을 얻었으며, 하부전극구조의 경우 off current값이 증가되는 특성을 볼 수 있다. 그러므로 유기트랜지스터의 전극구조는 상부전극 방식이 좋은 것 알 수 있었다. In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. For improving the characteristics of organic transistor, we tested transistor's mobility and output values with organic transistor's electrode structures. As a results, the mobility of top contact was $8{\times}10^{-3}[cm^2V^{-1}s^{-1}]$, that of bottom contact was $2{\times}10^{-4}[cm^2V^{-1}s^{-1}]$. Also, off current of bottom contact was increased. Therefore, we recommend the top contact electrode structure of organic transistor.

감지물질의 저항감소를 위한 후막형 가스센서 개발

이붕주 남서울대학교 2008 남서울대학교 논문집 Vol.14 No.-

For practical application as a low-resistivity gas sensor, SnO2 thick films semiconductor type gas sensor has studied and fabricated using screen printing technology. As a function of Sb2O3 and Sb2O5 addition in SnO2, the grain size was increases, while the porosity and initial resistance of thick film were rapidly decreased. In this time, resistivity decreasing effect with Sb2O3 doping was bigger than that of Sb2O5 doping. The fabricated gas sensor cured at 850 [℃] and doped 5 [mole %] Sb2O3 had a best gas sensing characteristic and low-resistivity properties. From these results, it is conformed that SnO2 gas sensing properties with low-resistivity could be approved by Sb2O3 doping. Key Words : Gas sensor, Sb2O3, SnO2

고분자 습도센서의 내수성 결함 원인분석에 대한 연구

이붕주,Lee, Boong-Joo 한국전자통신학회 2011 한국전자통신학회 논문지 Vol.6 No.1

본 논문에서는 현재 사용되어지고 있는 고분자 습도센서의 내수성 특성 결함현상을 파악하고, 불량의 원인규명을 목적으로 한다. 또한, 유추된 불량의 원인에 대한 진행과정을 구현하고자 불량시료와 개선된 고분자습도센서를 제작하여 불량시편과 개선시편에 대해 고온고습($60^{\circ}C/95%$) 시험조건을 기준으로 하여 모의시험을 행하였다. 그 결과를 통해 내수성 결함 및 그에 대한 원인을 파악 하였고, 결함 메커니즘을 제시하였다. In this paper, We have investigated the weak waterproofing defection characteristic of polymer humidity sensor and identified the cause of failure. In high temperature and high humidity conditions(($60^{\circ}C/95%$), the defecting process is simulated about defective and improved samples which are modified for the crosslinking polymer structure's aspect. It is aimed at the defecting reason and suggestion of defection process mechanism.

고정밀급 박막저항을 위한 NiCr/NiCrSi박막의 제조 및 전기적 특성

이붕주,Lee, Boong-Joo 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.6

In order to acquire fundamental informations to fabricate high precision thin film resistors, NiCr/NiCrSi alloy films were prepared using Ni and Cr targets. Effect of composition on the electrical properties of the NiCr/NiCrSi alloy film were then investigated. Considering the effect of Si doping on the electrical and material characteristics, the lower TCR (temperature coefficient of resistance) values could be achieved for samples with Ni/Cr ratio of $0.8{\sim}1.5$ (in a range of relative higher specific resistivity and Cr composition of $40\;wt%{\sim}55\;wt%$) and with Si doping. Consequently, the sample prepared using a DC power showed a good TCR of $-25\;ppm/^{\circ}C$, which implies that increase of specific resistivity and decrease of TCR would be achieved more efficiently not for Ni-Cr binary material but for Si doped Ni-Cr ternary material, and not using RF power but using DC power in the sputtering process.

진공증착중합법에 의해 제조된 폴리이미드박막의 절연파괴특성

이붕주,김형권,김종석,한상옥,박강식,김영봉,이덕출 ( Boong Joo Lee,Hyeong Gweon Kim,Jong Suk Kim,San Ok Han,Kang Sik Park,Young Bong Kim,Duck Chool Lee ) 한국전기전자재료학회 1997 한국전기전자재료학회 춘계학술대회논문집 Vol.1997 No.0

공정압력 및 기판바이어스 인가유무에 따른 PMMA 플라즈마중합박막의 전기적 특성

이붕주,Lee, Boong-Joo 한국전자통신학회 2011 한국전자통신학회 논문지 Vol.6 No.5

본 논문에서는 유기박막트랜지스터용 절연막에 활용코자 플라즈마중합방법을 이용하여 PMMA 절연막을 제작하였다. 기판의 바이어스인가 및 증착중 압력변화에 따른 전기적특성을 파악한 결과, 플라즈마중합법에 의한 MMA절연막의 증착조건 RF100[W], Ar20[sccm], 5[mtorr], RF bias 20[W] 에서 3.4의 유전율, 8.6[nm/min]의 높은 증착율 및 높은 절연특성을 얻을수 있다. 이처럼 얻어진 플라즈마 중합막은 유기트랜지스터 및 유기메모리의 절연막으로 충분히 활용가능함을 알 수 있다. In this paper, We have fabricated PMMA thin films by plasma polymerization method for organic thin film transistor's insulator layer. In the electrical characteristic results with deposition pressures and substrate RF bias power in thin film deposition process, we have got dielectric constant of 3.4, high deposition rate of 8.6 [nm/min] and high insulation characteristics in condition of RF100 [W], Ar20 [sccm], 5 [mtorr], RF bias 20 [W]. Therefore, the fabricated thin films are possible as insulation layer of OTFT and organic memory.

건식법에 의해 제작된 습도센서 개발

이붕주 남서울대학교 2007 남서울대학교 논문집 Vol.13 No.4

The purpose of this paper is to establish the optimum fabricating conditionof sensors using vapor deposition polymerization method(VDPM) whichbelongs to a mode of preparation of functional organic thin films with dryprocess and to develop thin film type humidity sensor which has goodhumidity sensitive characteristics. The sysnthesis of PMDA(pyromelliticdianhydride) and 4,4′- diaminodiphenyl ether(DDE) was carried out byVDP. The deposited thin films are the polyamic acid(PAA) thin films whichwere changed to polyimide(PI) by thermal curing. The basic structure of thehumidity sensor is a parallel capacitor which consists of three layers ofAl/PI/Al. As a results of those, the characteristics of fabricated sampleswere measured under various conditions, and obtained linear characteristicsand low hysteresis characteristic(±2%RH). Key Words : Polyimide(PI), Humidity sensor, VDPM