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Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화
원창섭,이명수,류세환,한득영,안형근,Sub, Won-Chang,Lee, Myung-Soo,Ryu, Se-Hwan,Han, Deuk-Young,Ahn, Hyung-Keun 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.
GaAs MESFET의 최대 트랜스컨덕턴스를 위한 고온특성
원창섭,김영태,한득영,안형근 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.4
This paper presents transconductance (g$\_$m/( characteristics of GaAs MESFET's at high temperatures ranging from room temperature to 350$\^{C}$. GaAs MESFET of 0.3x750[㎛] gate dimension has been used to obtain the experimental data. Gate to source voltage(V$\_$GS/) has been controlled to obtain the temperature dependent characteristics for maximum transconductance g$\_$mmax/ of the device. Furthermore g$\_$mmax/ and expected g$\_$m/ have been traced with temperatures ranging from room temperature to 350$\^{C}$ also by compensating for C$\_$GS/ to maintain the optimum operation of the device. From the results, V$\_$GS/decreases as the operating temperature increases for optimum operation of the transconductance. Finally V$\_$GS/ has been optimized to trace g$\_$mmax/ and enhances the decreased g$\_$m/ with different temperatures.
GaAs MESFET의 채널전하에 의한 전위장벽 강하특성
원창섭,안형근,한득영 건국대학교 산업기술연구원 2003 건국기술연구논문지 Vol.28 No.-
The gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. Next, the gate to drain current has been obtained with a ground source. The difference of two current has been tested and provide that the electric field that generated by channel charge effect to Schottky barrier height against the image force lowering effect.