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n-표면 거칠기가 형성된 AlGaInP 수직형 적색 발광다이오드의 광추출효율 증가
서재원,오화섭,송현돈,박경욱,유성욱,박영호,박해성,곽준섭,Seo, Jae-Won,Oh, Hwa-Sub,Song, Hyun-Don,Park, Kyung-Wook,Ryu, Seong-Wook,Park, Yung-Ho,Park, Hae-Sung,Kwak, Joon-Seop 한국진공학회 2008 Applied Science and Convergence Technology Vol.17 No.4
AlGaInP 기반 수직형 적색 LED (Light Emitting Diode)의 광추출효율을 증가시키기 위하여 화학적 etching 기술을 이용하여 n-AlGaInP 표면에 삼각꼴 모양의 거칠기를 형성하였다. Etching은 $H_3PO_4$계의 용액을 이용하여 화학적 etching을 진행 하였다. AlGaInP etching은 광추출효율의 증가와 밀접한 관련을 갖고 있으며 AFM (Atomic Force Microscope)을 이용하여 AlGaInP 표면을 분석하여 약 44 nm의 RMS (root-mean-square) 거칠기가 형성됨을 알 수 있었다. 광추출효율은 기존 수직형 적색 LED보다 거칠기가 형성된 수직형 적색 LED에서 41%의 높은 발광 효율을 보임으로써 고효율 수직형 적색 LED의 가능성을 보였다. In order to increase extraction efficiency of AlGaInP-based vertical RED LEDs, chemical wet etching technique was produced by using a roughened surface with triangle-like morphology. A commonly used $H_3PO_4$-based solution was applied for chemical wet etching. The light extraction of AlGaInP LED was related to the n-side roughed surface morphology. The morphology of roughed surface is analyzed by the atomic force microscope (AFM). As a result, the roughed surface AlGaInP LED has a root-mean-square (RMS) roughness of 44 nm. The brightness shows 41% increase after roughening n-side surface, as compared to the ordinary flat surface LED.
논문 : 고효율 질화갈륨계 발광 다이오드용 전자선 증착 ITO 투명 전도 전극 연구
서재원 ( Jae Won Seo ),오화섭 ( Hwa Sub Oh ),강기만 ( Ki Man Kang ),문성민 ( Seong Min Moon ),곽준섭 ( Joon Seop Kwak ),이국회 ( Kuk Hwe Lee ),이우현 ( Woo Hyun Lee ),박영호 ( Young Ho Park ),박해성 ( Hae Sung Park ) 대한금속재료학회 ( 구 대한금속학회 ) 2008 대한금속·재료학회지 Vol.46 No.10
In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from 140℃ to 220℃, the resistivity of the ITO films decreases slightly from 4.0×10-4 Ωcm to 3.3×10-4 Ωcm, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from 3.6×10-4 Ωcm to 7.4×10-4 Ωcm, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at 200℃ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.