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논문 : 고효율 질화갈륨계 발광 다이오드용 전자선 증착 ITO 투명 전도 전극 연구
서재원 ( Jae Won Seo ),오화섭 ( Hwa Sub Oh ),강기만 ( Ki Man Kang ),문성민 ( Seong Min Moon ),곽준섭 ( Joon Seop Kwak ),이국회 ( Kuk Hwe Lee ),이우현 ( Woo Hyun Lee ),박영호 ( Young Ho Park ),박해성 ( Hae Sung Park ) 대한금속재료학회 ( 구 대한금속학회 ) 2008 대한금속·재료학회지 Vol.46 No.10
In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from 140℃ to 220℃, the resistivity of the ITO films decreases slightly from 4.0×10-4 Ωcm to 3.3×10-4 Ωcm, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from 3.6×10-4 Ωcm to 7.4×10-4 Ωcm, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at 200℃ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.