RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제
      • 좁혀본 항목 보기순서

        • 원문유무
        • 원문제공처
        • 등재정보
        • 학술지명
        • 주제분류
        • 발행연도
        • 작성언어
        • 저자
          펼치기

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재

        Femtosecond Laser Surface Structuring of Amorphous and Crystalline Silicon

        이건준,오차환,윤종승,김은규,정현식,장진,손용덕,이영백 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6

        The surface structuring of amorphous and crystalline silicon was performed by using femtosecondlaser- induced phase transformations: i) amorphous-to-crystalline and ii) crystalline-to-amorphous. The amorphous silicon (a-Si) films were prepared on glass substrates by using plasma-enhanced chemical-vapor deposition. Two kinds of micropatterns were produced in the a-Si films: i) a twodimensional (2D) pattern (a word ‘q-Psi’) was produced by using the inverse Fourier transform of a computer-generated hologram, and ii) laser-induced gratings (LIGs) were made by means of two-beam interference of near-infrared femtosecond-laser pulses. By using micro-Raman spectroscopy, optical microscopy, scanning electron microscopy, and transmission electron microscopy, the femtosecond-laser pulses were found to induce a localized phase transformation from the amorphous to the crystalline phase, and the spatially-selected crystallization of a-Si was found to be responsible for the formation of patterns such as the LIG and the 2D pattern. Crystalline silicon (c-Si) with a SiO2 capping layer was also periodically modified by femtosecond holography. A micro- Raman study indicated that the LIG formation in c-Si could be ascribed to the spatially-selected amorphization of c-Si. The surface structuring of amorphous and crystalline silicon was performed by using femtosecondlaser-induced phase transformations: i) amorphous-to-crystalline and ii) crystalline-to-amorphous. The amorphous silicon (a-Si) films were prepared on glass substrates by using plasma-enhanced chemical-vapor deposition. Two kinds of micropatterns were produced in the a-Si films: i) a twodimensional (2D) pattern (a word ‘q-Psi’) was produced by using the inverse Fourier transform of a computer-generated hologram, and ii) laser-induced gratings (LIGs) were made by means of two-beam interference of near-infrared femtosecond-laser pulses. By using micro-Raman spectroscopy, optical microscopy, scanning electron microscopy, and transmission electron microscopy, the femtosecond-laser pulses were found to induce a localized phase transformation from the amorphous to the crystalline phase, and the spatially-selected crystallization of a-Si was found to be responsible for the formation of patterns such as the LIG and the 2D pattern. Crystalline silicon (c-Si) with a SiO2 capping layer was also periodically modified by femtosecond holography. A microRaman study indicated that the LIG formation in c-Si could be ascribed to the spatially-selected amorphization of c-Si.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼