http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ce ion이 첨가된 황산 아노다이징의 온도 변화에 따른 내플라즈마 특성
소종호,윤주영,신재수,So, Jongho,Yun, Ju-Young,Shin, Jae-Soo 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.1
We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.
Atmospheric Plasma Spray코팅을 이용한 Yttrium계 소재의 내플라즈마성 및 세정 공정에 관한 연구
권혁성,김민중,소종호,신재수,정진욱,맹선정,윤주영,Kwon, Hyuksung,Kim, Minjoong,So, Jongho,Shin, Jae-Soo,Chung, Chin-Wook,Maeng, SeonJeong,Yun, Ju-Young 한국반도체디스플레이기술학회 2022 반도체디스플레이기술학회지 Vol.21 No.3
In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y<sub>2</sub>O<sub>3</sub> and Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF<sub>4</sub>, O<sub>2</sub>, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H<sub>2</sub>SO<sub>4</sub>(3):H<sub>2</sub>O<sub>2</sub>(1)) to remove the defect-causing surface fluorinated film. APS-Y<sub>2</sub>O<sub>3</sub> and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.