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배기덕(Ki Deok Bae),백석순(Seog Soon Baek),신종우(Jong-Woo Shin),임형태(Hyung-Taek Lim),신수호(Su Ho Shin),오용수(Yongsoo Oh) 대한기계학회 2003 대한기계학회 춘추학술대회 Vol.2003 No.11
A new thermal inkjet printer head on SOI wafer with virtual valve was proposed. It was composed of two<br/> rectangular heaters with same size. So we could call it T-jet(Twin jet). T-jet has a lot of merits. It has the<br/> advantage of being fabricated with one wafer and is easy to change the size of chamber, nozzle, restrictor and<br/> so on. However, above all, It is the best point that T-jet has a virtual valve. And it was manufactured on SOI<br/> wafer. The chamber was formed in its upper silicon whose thickness was 40um. The chamber’s bottom layer<br/> was silicon dioxide of SOI wafer and two heaters were located underneath the chamber’s ceiling. And the<br/> restirctor was made beside the chamber. Nozzle was molded by process of Ni plating. Ni was 30um thick.<br/> Nozzle ejection test was performed by printer head having 56 nozzles in 2 columns with 600NPI(nozzle per<br/> inch) and black ink. It measured a drop velocity of 12m/s, a drop volume of 30pl, and a maximum firing<br/> frequency of 12KHz for single nozzle ejection. Throwing out the ink drop in whole nozzles at the same time,<br/> it was observed that the uniformity of the drop velocity and volume was less than 4%.
정사각뿔의 면적비를 이용한 로봇의 자기위치인식에 관한 연구
배기덕(Gi Deok Bae),김동환(Dong Hwan Kim) 대한기계학회 2014 대한기계학회 춘추학술대회 Vol.2014 No.11
In this study, we suggested a position recognition method for a robot by introducing the area ratio formed by a regular fourside pyramid image captured by a camera. The pyramid is suspended from the center of ceiling. Whenever the position of the robot is changed, the area ratio must change, which determines the robot location. Using image process technique, the area ratio was captured, later being adopted to the proposed equations to determine the current robot location. The proposed method was applied to the real robot using experiments, yielding the desirable performance.
陳甲德,裵基哲,李正秀,金英姬 嶺南大學校 環境問題硏究所 1989 環境硏究 Vol.9 No.1
It was investigated Cadmium eliminating capacty of Quartz Porphyry(Q.P.) during washing, swelling, and cooking process in rice contaminated artificially. 1. After washing the rice four times with water, the eliminating rate of Cadmium from artificially contaminated sample were 16% in control group, 28% and 42% in 25g/kg and 50g/kg Q.P. treated group, respectively. 2. Swelling of rice in water about 20 minutes didn't change the Cadmium level in Q.P. treated group. 3. Cadmium eliminating efficiency by cooking was significantly increased in Q.P. treated group (43~54%) compared to control group(31%). 4. These results suggest that treatment of rice with Q.P. is very effective to remove the Cadmium contamination in rice.
Hollow Structure에서의 희생층 평탄화 제작 공정
윤용섭,배기덕,최형,전찬봉,노광춘 대한전기학회 2004 전기학회논문지C Vol.53 No.10-C
Two fabrication approaches are proposed to planarize the sacrificial layer over hollow structures. One is the photoresist filling method that makes use of photolithography, thermal curing and plasma ashing. The other is the lamination method that is applying pressure and temperature to the organic film over the hollow structures. The fabrication results are compared with those of CMP process. Trenches and cavities with various dimensions have been made for the porposed process. Upon measuring the planarization levels, they are dependent on planarization methods and the geometrical size of hollow structures. The photoresist filling method is so strongly dependent on the width and depth of trenches that we have problems to use it for large dimensional trenches. To the contrary, the flatness of sacrificial layer over the trenches was found to be almost independent of trench dimensions for the lamination method. A CMP process shows the most excellent results, but the fabrication is complicated and the access to it is not so easy. It is important to choose the proper planarization method by considering the required flatness levels, materials to be planarized, and connection between the planarization step and the previous or the following process of it.