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RF UBM Sputtering에 의해 증착된 hBN 박막의 미세구조가 cBN 상의 핵형성에 미치는 영향
이은옥,박종극,임대순,백영준,Lee Eun-Ok,Park Jong-Keuk,Lim Dae-Soon,Baik Young-Joon 한국진공학회 2004 Applied Science and Convergence Technology Vol.13 No.4
Si(100) 기판 위에 RF UBM 스퍼터링 (Unbalanced Magnetron Sputtering) 방법을 이용하여 BN 박막을 증착하였다. 이온 충돌 에너지에 영향을 주는 증착 압력과 기판 바이어스 전압을 변화시켜, 증착된 BN박막의 미세구조와 압축응력의 변화를 살펴보았다. 높은 증착 압력에서는 hBN laminate의 정렬도가 기판 바이어스 전압이 증가함에 따라 선형적으로 증가한 반면, 낮은 증착 압력에서는 낮은 기판 바이어스 전압에서 hBN laminate의 정렬도가 높게 나타났다. hBN 박막의 응력 변화와 표면 형상은 hBN laminate의 정렬도와 밀접한 관계가 있는 것으로 관찰되었는데, 이의 적절한 조절에 의해 압축응력의 증가 없이도 hBN 박막 위에 cBN 상의 핵 형성이 일어날 수 있었다. Boron nitride thin films were deposited on Si(100) substrate by RF (Radio-frequency) UBM (Unbalanced Magnetron) sputtering system. The effect of working pressure and substrate bias voltage on microstructure and compressive stress of boron nitride thin films has been investigated. In high working pressure, the alignment of hBN laminates increased with substrate bias voltage, in low working pressure, however, it was high in low substrate bias voltage. Compressive stress evolution and surface morphology of deposited BN films are closely related with the alignment of hBN laminates. The cBN phase without high compressive stress could be nucleated on hBN thin film by controlling the alignment of hBN laminates.
입방정 질화붕소 박막의 잔류응력 형성에 미치는 산소 첨가 효과
장희연(Hee-yeon Jang),박종극(Jong-Keuk Park),이욱성(Wook-Seong Lee),백영준(Young-Joon Baik),임대순(Dae-Soon Lim),정증현(Jeung-hyun Jeong) 한국표면공학회 2007 한국표면공학회지 Vol.40 No.2
In this study, we investigated the oxygen effect on the nucleation and its residual stress during unbalanced magnetron sputtering. Up to 0.5% in oxygen flow rate, cubic phase (c-BN) was dominated with extremely small fraction of hexagonal phase (h-BN) of increasing trend with oxygen concentration, whereas hexagonal phase is dominated beyond 0.75% flow rate. Interestingly, the residual stress in cubic-phase-dominated films was substantially reduced with small amount of oxygen (~0.5%) down to a low value comparable to the h-BN case. This may be because oxygen atoms break B-N sp³ bonds and make B-O bonds more favorably, increasing sp² bonds preference, as revealed by FTIR and NEXAFS. It was confirmed by experimental facts that the threshold bias voltage for nucleation and growth of cubic phase were increased from ?55 V to ?70 V and from ?50 V to ?60 V, respectively. The reduction of residual stress in O-added c-BN films is seemingly resulting from the microstructure of the films. The oxygen tends to increase slightly the amount of h-BN phase in the grain boundary of c-BN and the soft h-BN phase of 3D network including surrounding nano grains of cubic phase may relax the residual stress of cubic phase.
비대칭 마그네트론 스퍼터링 방법에 의한 탄화붕소박막의 증착거동
배경은 ( Kyung Eun Bae ),박종극 ( Jong Keuk Park ),이욱성 ( Wook Seong Lee ),배영준 ( Young Joon Baik ) 대한금속재료학회(구 대한금속학회) 2014 대한금속·재료학회지 Vol.52 No.12
The effect of temperature and substrate bias on the deposition behavior of boron carbide (BC) thin film was studied. BC thin films were deposited by an unbalanced magnetron sputtering (UBM sputtering) method. The B4C target was connected to a DC power supply at 200 W and sputtered by ionized argon gas. The distance between the substrate and target was 7.5 cm and the deposition pressure was 3 mTorr with argon gas. Silicon substrates were heated by halogen lamps from room temperature to 450 ℃. DC bias voltage applied to substrates up to .100 V. The deposited films showed no diffraction peak on either X-ray diffraction and transmission electron microscopy analysis, which indicated an amorphous nature of the films irrespective of deposition temperature and substrate bias in this study. Only a 1280 cm.1 absorption peak of Fourier transform infrared spectroscopy was observed. The hardness of the BC films was about 40 GPa regardless of deposition temperature.
WC-Co 인써트의 절삭 성능에 미치는 TiAlN계 나노 다층막 코팅의 영향
임희열(Hee-Youl Lim),박종극(Jong-Keuk Park),김경배(Kyung-Bae Kim),최두진(Doo-Jin Choi),백영준(Young-Joon Baik) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.1
본 연구에서는 나노 두께를 갖는 두 층을 반복적으로 증착하여 나노 다층 구조를 갖는 질화물이 코팅된 절삭공구의 기계적 성능과 절삭성능의 향상에 대해 고찰하였다. 이러한 질화물계 나노 다층막에 대한 재료는 격자상수와 결정구조에 따라 Ti0.54Al0.46N-CrN계와 Ti0.84Al0.16N-AlN계를 선택하여, UBM sputtering 증착법을 이용하여 초경(WC-Co) 인서트(insert)위에 증착하였다. 공정 변수들인 증착온도, 압력, 기판 바이어스 전압, 기판회전 속도 등을 조절하여 다른 주기 값을 갖는 일정한 두께의 다층막들을 증착 시켰고, 주기에 따른 초격자 형성, 경도값과 절삭성능을 관찰 하였다. 증착된 다층막들은 그 주기 값에 따라 경도 값이 다르게 나타났으며, 경도 값이 상대적으로 높았던 특정 주기의 다층막이 코팅된 절삭 공구의 경우, 기존의 상용화된 제품에 비해 frank wear로 비교한 절삭 성능이 20 % 이상 향상됨을 관찰하였다. The mechanical property and cutting performance of the cutting tools coated with nanoscale multilayered nitride film have been investigated. Ti0.54Al0.46N-CrN and Ti0.84Al0.16N-AlN systems, which showed superlattice in nanoscale multilayered coating, were deposited on WC-Co insert by UBM sputtering. The superlattice coatings with different bilayer periods were manufactured by controlling deposition parameters. The superlattice formation and hardness of the nanoscale multilayered nitride film and the cutting performance of the insert coated with the film were examined. The hardness and cutting performance were dependent on the bilayer periods of the coatings. The flank wear of the inserts with superlattice coatings were decreased over 20 %, compared to those of commonly used cutting tools coated with TiAlN single phase.
권도현 ( Do Hyun Kwon ),박종극 ( Jong Keuk Park ),이욱성 ( Wook Seong Lee ),백영준 ( Young Joon Baik ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.2
The microstructure of carbon film, deposited using hot-filament chemical vapor deposition, was investigated in relation to deposition pressure and methane concentration as deposition variables. Methane concentration in hydrogen gas was varied from 0.5 to 5% in volume. Deposition pressures were 5, 15, 45 and 75 Torr. Filament temperature and deposition temperature were fixed at 2100 ℃ and 950 ℃, respectively. With increasing methane concentration, the surface morphology changed its microstructure from microcrystalline diamond, to nanocrystalline diamond, to graphite. Raman spectroscopic analysis and X-ray diffraction analysis confirmed the bonding structures corresponding to each microstructure. At 5 Torr, the surface showed a fine grained morphology, different from the microstructures in the other pressure cases; however, the bonding nature also changed from diamond to graphite with increasing methane concentration.
KF 후열처리 공정시 CIGS 박막의 Na 원소 존재가태양전지 셀성능에 미치는 영향
손유승(Yu-Seung Son),김원목(Won Mok Kim),박종극(Jong-Keuk Park),정증현(Jeung-hyun Jeong) 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.4
The high efficiency cell research processes through the KF post deposition treatment (PDT) of the Cu(In,Ga)Se₂(CIGS) thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, 400°C changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, 350°C) in the greatly reduced, and in 400°C tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.
비대칭 마그네트론 스퍼터링 방법으로 증착한 초경도 탄화규소 박막
배경은 ( Kyung Eun Bae ),채기웅 ( Ki Woong Chae ),박종극 ( Jong Keuk Park ),이욱성 ( Wook Seong Lee ),백영준 ( Young Joon Baik ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.8
The effect of sputter target power and substrate bias voltage on the deposition of silicon carbide thin film was investigated. Films were deposited using unbalanced magnetron sputtering method with sintered silicon carbide target connected to a direct current electric power from 50 to 200 W. Ar gas was used as a sputtering gas. The distance between the target and the substrate was 7.5 cm and the deposition pressure was 3 m Torr. We used a Si single crystal wafer as a substrate, which was heated at 450℃. The substrate bias voltage was varied between 0 and -100V. Deposited films consisted of columnar grains with several nm width, which formed a texture whose orientation was influenced by the bias voltage. Most of the grains were crystalline which was confirmed by transmission electron microscopy. The hardness measured by a nano-indentation method showed a super-hardness of about 50 GPa. (Received September 17, 2014)
초격자 고경도 나노 다층막 소재의 복합경도 해석을 통한 계면 강화 효과 분석
김성훈,이윤희,박종극,백영준,권동일 대한금속재료학회 2003 대한금속·재료학회지 Vol.41 No.12
Multilayer coatings consisting of very thin layers of nitride materials deposited by magnetron sputtering (sometimes called superlattices) exhibit hardnesses over 50 GPa, much higher than that of single layers. Several explanations for this hardness increase have been proposed, including dislocation blocking by layer interfaces, Hall- Petch strengthening, strain effects at layer interfaces, and the supermodulus effect. Among these, dislocation blocking has been generally accepted as a dominant factor in large hardness enhancement. However, the interface between two materials consisting of multilayers is broadened due to interdiffusion. The magnitude of hardness enhancement by the interface has not yet been quantified for real systems. In this study, the concept of composite hardness is introduced to quantify the interface-related hardness enhancement. We suggest a composite hardness equation and quantifythe magnitude of hardness increase by using an equation based on the interface hardness and the interface thickness derived by comparing results derived from this equation and those determined in nanoindentation tests. Three multilayer systems, such as TiN/VN, TiN/NbN and CrN/NbN were used in the equation.