http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
박재현,김영진,최병진,정재문,박경빈,김기완 경북대학교 센서기술연구소 1995 센서技術學術大會論文集 Vol.6 No.1
The PLT thin films on (001) cleaved MgO single crystal substrate have been fabricated by RF magnetron sputtering using PbO-rich target and the dependence of physical and electrical properties on fabrication conditions have been studied. The optimum fabrication conditions of the PLT thin films were such that substrate temperature, working pressure, Ar/O_(2) ratio, and rf power density was 640 ℃, 10 mTorr, 10/1, and 1.7 W/cm^(2), respectively. In these conditions, the PLT thin film showed the Pb/Ti ratio of 1/2, the resistivity of 8x10^(11) Ω·cm, and dielectric constant of 110. The PLT thin film showed good c-axis orientation and crystallinity according to XRD analysis.