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이온 샤우어 도핑을 이용한 자기정렬방식의 APCVD 비정질 실리콘 박막 트랜지스터의 제작
문병연,이경하,정유찬,유재호,이승민,장진,Moon, Byeong-Yeon,Lee, Kyung-Ha,Jung, You-Chan,Yoo, Jae-Ho,Lee, Seung-Min,Jang, Jin 대한전자공학회 1995 전자공학회논문지-A Vol.32 No.1
We have studied the fabrication self aligned atmospheric pressure(AP) CVD a-Si thin film transistor with source-drain ohmic contact by using ion shower doping method. The conductivity is 6*10$^{-2}$S/cm when the acceleration voltage, doping time and doping temperature are 6kV, 90s and 350.deg. C, respectively. We obtained the field effect mobility of 1.3cm$^{2}$/Vs and the threshold voltage of 7V.
Si(111)표면 위에서 Si의 동종층상성장에 관한 연구
곽호원(Ho-Weon Kwak),문병연(Byung-yeon moon) 한국산업융합학회 2004 한국산업융합학회 논문집 Vol.7 No.4
The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At 450℃, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at 450℃ was changed from 7×7 structure into √3×√3 structures. Since the √3×√3 structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the 7×7 structure to a √3×√3 one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.<br/>