http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Zn가 확산된 p-n In Ga P 다이오드의 전기적 특성
문동찬 光云大學校 1989 論文集 Vol.18 No.-
The electrical properties of Zn-diffused p-n In�?? diodes which is made from the n type ?? crystals grown by the temperature gradient solution (TGS) method were investigated. The p-n In�?? diodes were shows extremely good rectifying characteristics and the forward currents at 300K were composed of the components of initial resistance (??), recombination current of proportion to exp(qV/2KT), diffusion current of proportion to exp(qV/1KT) and series resistance (??) with increasing of the forward bias voltage. The relative electroluminescence intensity with forward bias voltage was proportion to exp (qV/1.55KT) by the radiative recombination of the carriers which participate in the diffusion and recombination current, and the non-radiative recombination was predominant at the recombination current region. The forward current-voltage characteristics with the composition and temperature were affected by the variation of the energy band structure and the mobility with it, and the type of the p-n junction formed by the Zn-diffusion were found to be gradient type which the carrier concentration in the p-n junction region were linealy varied with the depletion region width. The concentration gradient and the depletion region width were found to be ??, respectively.
문동찬 光云大學校 1987 論文集 Vol.16 No.-
SSD법으로 성장한 n-InP기판에 건식 산화방법으로 자연산화막을 형성하여 산화막의 형성 조건에 따른 산화막의 구성성분을 적외선 흡수 분광기, FTIR 및 분말 X선 회절법으로 분석하였다. 건식산화방법으로 제작된 InP의 자연산화막은 산화온도가 650℃이하에서는 InPO₄와 ??가 약간 존재하는 In₂O₃의 혼합물로 나타났으며, 650℃이상에서는 산화막의 표면이 불균형해지며, 주로 InPO₄를 형성하며 일부는 InPO₄와 P₂O?의 복합적인 산화물 형태를 이루었다. 또한 산화온도가 증가함에 따라 산화막의 두께는 지수함수적으로 증가하였다. Natural oxide films have been prepared on the n-Inp substrates grown from SSD method by the dry oxication method, and analyzed chermical compositions of oxide film dependent on formation condition of natural oxide by IR, FTIR and x-ray's diffraction methods. The characteristics of natural oxide films were as follow : It was predominantly composed of In₂O₃with some mixture of InPO₄and P₂O? at temperature below 650℃, and above 650℃, the surface of oxide film was unevenly, formed most of InPO₄with some mixture of In₂O₃and P₂O?. And as the temperature increases, the thickness of oxide film increased exponentially.