Antimicrobial resistance of zoonotic in food animals and their products

문동찬 한국예방수의학회 2019 한국예방수의학회 학술대회자료집 Vol.2018 No.-

n-CdS/p-InP 이종접합의 광기전력효과

문동찬 光云大學校 1988 論文集 Vol.17 No.-

SSD법으로 성장한 Cd-doped p-InP 기판에 n-CdS를 진공증착시켜 n-CdS/p-InP 이종접합 태양전지를 제작하고 이것의 전기적, 광학적 특성을 조사하였다. n-CdS를 Ar분위기에서 200℃로 30분 동안 열처리 하였을 때 비저항, 이동도 및 전자 농도는 각각 0.16Ω-㎝, 92.82㎠/V·sec, ?? 이었다. n-CdS/p-InP 이종접합 태양전지의 분광특성은 CdS와 InP의 금지대폭에 해당하는 5200∼9200Å 파장범위에서 나타났으며, 제작된 태양전지의 개방회로전압 ??, 단락회로전류밀도 ??와 효율 η는 각각 85mV, ??와 3.5%이었다. n-CdS/p-InP heterojunction solar cells were fabricated by vacuum evaporation of n-CdS onto the SSD grown Cd doped p-InP substrates and their electrical and optical characteristics were investigated. The evaporated n-CdS were annealed in Ar atmosphere at 200℃ for 30min. The resistivity, mobility and electron concentration of annealed n-CdS were 0.16Ω-㎝, 92.82㎠/V·sec and ??, respectively. The spectral responses of fabricated solar cells were obtained between 5200 and 9200Å which correspond to the band gaps of CdS and InP, respectively. The open circuit voltage ??, short circuit current density ?? and efficiency ηof the fabricated solar cell were 85mV, ?? and 3.5%, respectively.

熱處理된 InP의 깊은 광루미네센스

文東纘 光云大學校 1983 論文集 Vol.12 No.-

Fe-doped S.I. Cr-doped n-type and undoped n-type and undoped n-type InP substrate materials heat treated under temperature range from 400 to 900℃ have studied emission intensity which was dependent on etching depth of samples by photoluminescence method at 4.2°K. Observation of the 0.35eV emission due to ?? intracenter transition show the accumulation of Fe at the near surface regions. The ratio of emission intensities of Fe-, Cr-, and un-doped materials at 800℃ is 23:1:1.1; the accumulation of Fe is primarily due to the out-diffusion of unintentionally doped Fe present in the Cr-doped, undoped substrate. The 0.5eV emission band of Fe-doped materials proved that this peak is related to Fe. The 1.1 eV emission peak in samples heat treated at 400℃ increase and shift to high energy.

n+ -p InP 동종접합 다이오드의 제작과 특성

문동찬 光云大學校 1992 論文集 Vol.21 No.-

n+ -p homojunction InP diodes were fabricated using thermal diffusion of Sulfur into p-type InP substrates(Zn doped, LEC grown) and their electrical and optical chractreistics were investigated. The Sulfur diffusion was carried out at 550℃, 600℃, 650℃, 700℃, for 4 hours in a sealed quartz ampoule(∼2ml in volume) containing 5mg In₂S₃and 1mg of red phosphorus. The InP substrates(in the form of 5 ×5 ×0.3mm³)had a carrier concentration of 2.3 ×10?cm -³and (100) orientation. The formed junction depth was below 0.5㎛. After the removal of diffused layer on the rear surface of the wafer, the back ohmic contacts to the p-side were made with a vacuum evaporation of Au-Zu(2%) followed by an annealing at 450℃ for 5 minutes in flowing by an annealing at 500℃ for 3 minutes in flowing Ar gas. The front contacts were made with a vacuum evaporation of Au-Ge(12%) followed by an annealing at 500℃, for 3 minutes in flowing Ar gas. The remarkable spectra response of the cells obtained at the region of 6000-8000 A. The open circuit voltage V?, short circuit current density J?, fill factor and conversion efficiency ηof the fabricated diodes(diffusion condition: at 700℃ for 4 hours) were 0.492 V, 9.77mA/cm², 0.607 and 4.86%, respectively. The open circuit voltage V?, short circuit current density J?, fill factor and conversion efficiency ηof the fabricated pattern solar cells (diffusion condition; at 700℃ for 4 hours) were 0.660V, 11.56mA/cm², 0.6536 and 8.3%, respectively.

Cd 이 擴散된 InP 의 特性에 關한 硏究

文東纘 光云大學校 1984 論文集 Vol.13 No.-

Cd diffusion into n-InP which grown by the SSD method in our lab. was performed in a vacuum evacuated and sealed quartz ampoule. The diffusion depth was proportional to the square roots of diffusion time and decreased with increasing amount of P, surface hole concentration was ?? and it was not affected by the diffusion time but it was decreased with increasing amount of P. The activation energy and diffusion coefficient for Cd diffusion in InP was found to be 1.7eV, ??=0.11 exp(-1.7eV/??·T), respectively. The Cd diffused ??-n InP homojunction diodes revealed good rectifing characteristics and the ideality factor was approximated to 1 in the diffusion current dominant region. An abrupt junction can be formed by diffusion at temperature lower than 650℃ and diffusion time shorter than 9 hours, while a graded junction can be formed by higher temperature and higher diffusion time.

Zn가 확산된 p-n In Ga P 다이오드의 전기적 특성

문동찬 光云大學校 1989 論文集 Vol.18 No.-

The electrical properties of Zn-diffused p-n In�?? diodes which is made from the n type ?? crystals grown by the temperature gradient solution (TGS) method were investigated. The p-n In�?? diodes were shows extremely good rectifying characteristics and the forward currents at 300K were composed of the components of initial resistance (??), recombination current of proportion to exp(qV/2KT), diffusion current of proportion to exp(qV/1KT) and series resistance (??) with increasing of the forward bias voltage. The relative electroluminescence intensity with forward bias voltage was proportion to exp (qV/1.55KT) by the radiative recombination of the carriers which participate in the diffusion and recombination current, and the non-radiative recombination was predominant at the recombination current region. The forward current-voltage characteristics with the composition and temperature were affected by the variation of the energy band structure and the mobility with it, and the type of the p-n junction formed by the Zn-diffusion were found to be gradient type which the carrier concentration in the p-n junction region were linealy varied with the depletion region width. The concentration gradient and the depletion region width were found to be ??, respectively.

학술 2 - 양돈유래 MRSA 전파 및 감염 관리

문동찬,Mun, Dong-Chan 대한수의사회 2014 대한수의사회지 Vol.50 No.7

磁場內에서의 原子스펙트럼 : Zeeman 效果의 理論을 中心으로

文東纘 광운대학교 1972 論文集 Vol.2 No.-

In 1892, P. Zeeman was discovered a fact that the spectrum in the magnetic field separated as doublet and triplet line. In this paper, it is summary on the theory of normal Zeeman effect by classical theory, atomic vector model and quantum theory, and the theory of anomalous effect in weak and strong magnetic field.

수직 Bridgman 법으로 성장된 비화학량론적 CdTe 결정의 특성

문동찬 光云大學校 1995 論文集 Vol.24 No.-

Nonstoichiometric CdTe crystals were grown by a vertcal Bridgman method. Te-rich CdTe crystal was grown with Te: Cd=1.001: 1, Cd-rich CdTe was Te:Cd=1:1 by atomic weight percent. Lattice constants of Te-rich CeTe and Cd-rkch CdTe by XRD were 6.4919Å, 6.4709Å respectively. The difference of lattice constant compared with stoichiometric CdTe, is due to the deviation of elements from stoichimetric composition. EPD were 3×10³-1.07×10⁴㎝-² for Te-rich CdTe and 2×3.43×10⁴㎝-²for Cd-rkch CdTe using by E-Ag solution for (111) plane. The carrier cincentration, the resistivity, and the Hall mobility were measured by the Ban der Pauw method. For Te-rich CdTe, p=5.78×10?㎝-³,p=5.78×10?㎝-³, ρ=20.197Ω㎝, μ?=75.64㎝²ν-¹sec-¹, and Cd-rkch CdTe CdTe had values of n=2.98×10?㎝-³, ρ=0.214Ω㎝, μ?=979.93㎝²ν-¹sec-¹, respectively. Conduction type conversion was occurred in Te-rich CdTe after 2 hours under Cd-atmosphere annealing at 600℃. The reason of type conversion was considered by the annihilation of Cd vacancy. But Cd-fich CdTe had not showed type conversion nuder Te-atmosphere annealing. This results was considered difference in vapor pressure between Cd and Te. Transmittance of Te-rich CdTe was 60% and that of Cd-rich CdTe was 65% nearly exact to the theorectical value of 65.3%. The difference in Transmittance of the Te-rich CdTe was considered due to Cd interstitials in that samples.

일반원고 4 - 동물사육 및 관련종사자에서 메티실린내성황색포도알균(MRSA)의 감염 관리 방안

문동찬,Mun, Dong-Chan 대한수의사회 2015 대한수의사회지 Vol.51 No.7