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레이저 에블레이션법으로 제작된 PLZT 박막의 구조 및 전기적 특성에 관한 연구
장낙원,마석범,백동수,최형욱,박창엽,Jang, Nak-Won,Mah, Suk-Bum,Paik, Dong-Soo,Choi, Hyung-Wook,Park, Chang-Yub 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.10
PLZT thin films were fabricated with different Zr/Ti ratios by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Si substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, $O_2$ pressure 200m Torr. 2/55/45 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$\ulcorner=1550 and dielectric loss was 0.03 at 10kHz. At 2/70/30 PLZT thin film, coercive field and remnant polarization was respectively 19[kV/cm], 8[$\mu$C/$\textrm{cm}^2$]. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.
발열 전극에 따른 상변화 메모리 소자의 전자장 및 열 해석
장낙원,마석범,김홍승,Jang, Nak-Won,Mah, Suk-Bum,Kim, Hong-Seung 한국마린엔지니어링학회 2007 한국마린엔지니어링학회지 Vol.31 No.4
PRAM (Phase change random access memory) is one of the most promising candidates for next generation non-volatile memories. However, the high reset current is one major obstacle to develop a high density PRAM. One way of the reset current reduction is to change the heater electrode material. In this paper, to reduce the reset current for phase transition, we have investigated the effect of heater electrode material parameters using finite element analysis. From the simulation. the reset current of PRAM cell is reduced from 2.0 mA to 0.72 mA as the electrical conductivity of heater is decreased from $1.0{\times}10^6\;(1/{\Omega}{\cdot}m$) to $1.0{\times}10^4\;(1/{\Omega}{\cdot}m$). As the thermal conductivity of heater is decreased, the reset current is slightly reduced. But the reset current of PRAM cell is not changed as the specific heat of heater is changed.
기판 열처리에 따른 (Pb, La)TiO₃박막의 유전 특성
박정흠,마석범,박창엽 연세대학교 산업기술연구소 2001 논문집 Vol.33 No.1
(Pb0.72 La0.28)TiO3 thin films were fabricated on the Pt/Ti/SiO2/Si substrated by sol-gel processing. The spin-coated PLT films were sintered at 750℃ for 5min by rapid thermal annealing(RTA). The structural and electrical properties of the PLT thin films deposited annealed and non-annealed substrate were discussed. (Pb0.72 La0.28)TiO3 thin films on substracte annealed at 650[℃], 30[min], had (111) prefer-orientation and high dielectric constant of 1400. We concluded that this (111) prefer-orientation was induced by intermetallic Pt3Ti seed on annealed substrate. Leakage current densities of PLT films thicker than 3300□ were less than 10-7 [A/㎠] order at electric field 150[kV/cm]