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As<sub>2</sub>Se<sub>3</sub> 기반 Resistive Random Access Memory의 채널 직선화를 통한 신뢰성 향상
남기현,김충혁,Nam, Ki-Hyun,Kim, Chung-Hyeok 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.6
Resistive random access memory (ReRAM) of metallic conduction channel mechanism is based on the electrochemical control of metal in solid electrolyte thin film. Amorphous chalcogenide materials have the solid electrolyte characteristic and optical reactivity at the same time. The optical reactivity has been used to improve the memory switching characteristics of the amorphous $As_2Se_3$-based ReRAM. This study focuses on the formation of holographic lattices patterns in the amorphous $As_2Se_3$ thin film for straight conductive channel. The optical parameters of amorphous $As_2Se_3$ thin film which is a refractive index and extinction coefficient was taken by n&k thin film analyzer. He-Cd laser (wavelength: 325 nm) was selected based on these basic optical parameters. The straighten conduction channel was formed by holographic lithography method using He-Cd laser.$ Ag^+$ ions that photo-diffused periodically by holographic lithography method will be the role of straight channel patterns. The fabricated ReRAM operated more less voltage and indicated better reliability.
포토닉 크리스탈 응용을 위한 비정질 칼코게나이드 As-Ge-Se-S 박막의 특성 연구
남기현,구용운,최혁,정홍배,Nam, Ki-Hyun,Ju, Long-Yun,Choi, Hyuk,Chung, Hong-Bay 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.6
In this paper, we investigated the properties of chalcogenide glass thin films formed by photo-inducing for use in 1-dimensional photonic crystals. We used Ag-doped amorphous As-Ge-Se-S thin films which belongs in the chalcogenide materials having sensitive photoluminescence properties. The purpose of this experiment is to form the holographic lattice for 1-dimensional photonic crystals. The way in which photo-induce into the amorphous chalcogenide thin films is holographic lithography method. We confirmed the formation of diffraction lattice by sensing the existence of diffraction beam and measured the diffraction efficiency. The results suggest that there is an application possibility with photonic crystals.
남기현,문영식,Nam, Gi-Hyeon,Mun, Yeong-Sik 한국정보처리학회 2001 정보처리학회논문지B Vol.8 No.2
본 논문에서는 새로운 형태 특징값으로서 형태 correlogram을 제안하고 이를 기반으로 한 효과적인 내용기반 영삼검색(content-based image retrieval) 방법을 제시한다. 기존읜 색상 correlogram은 색상 정보에 공간적인 정보를 부여함으로써 영상검색 성능을 향상시켰다. 그러나 이 특징값은 형태 정보를 포함하고 있지 않아서 색상이 다르면서 비슷한 윤곽선 형태를 갖는 물체의 검색에는 좋은 효과를 보이지 못한다.이 문제를 해결하기 위해 예지(edge)들의 correlogram인 형태(shape) correlogram을 제안한다. 색상 correlogram이 색상들의 거리에 따른 상관관계를 나타내는데 반해 형태 correlogram은 에지 각도들의 상관관게를 나타낸다. 형태 correlogram은 gradient 축과 각도 축을 가지는 2차원 특징 벡터(feature vector)로 표현된다. 각 축은 24개 빈(bin)으로 나뉘어져서 총 576개의 원소를 가지게 된다. 또한 본 논문에서는 형태 correlogram의 데이터 크기를 줄이고, 회전에 대해 불변인 특성을 가지게 하기 위해 투영(projected) 형태 correlogram을 제안한다. 실험결과를 통하여 본 논문에서 제안한 형태 correlogram과 투영 형태 correlogram을 사용한 영상검색 방법이 기존의 방법보다 성능면에서 우수함을 입증한다.
Sb 광도핑에 의한 Ge<sub>1</sub>Se<sub>1</sub>Te<sub>2</sub> 박막의 상변화 메모리 특성
남기현,김장한,정홍배,Nam, Ki-Hyun,Kim, Jang-Han,Chung, Hong-Bay 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5
For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.
Holographic Lithography 방법을 적용한 Chalcogenide-based ReRAM(Resistance RAM) 소자의 개발에 관한 연구
남기현,정홍배,Nam, Ki-Hyun,Chung, Hong-Bay 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.12
In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.
남기현,한판암,양해술,Nam, Ki-Hyun,Han, Pan-Am,Yang, Hae-Sool 한국정보처리학회 2001 정보처리학회논문지D Vol.8 No.3
소프트웨어는 갈수록 대규모화, 다기능화되는 방향으로 발전하고 있다. 더불어 소프트웨어에 관한 사용자의 요구 수준도 높아지고 있으며 특히 소프트웨어의 품질에 대한 요구는 지속적으로 높아지고 있다. 이러한 사용자의 요구를 만족시킬 수 있는 방안들이 다양한 관점에서 연구되고 있다. 그 중에서도 소프트웨어의 품질평가를 통해 그 결과를 개발자에게 피드백함으로써 소프트웨어의 품질을 향상시키려는 관점에서 품질평가 체계 및 방법론에 대한 연구가 활발히 진행되고 있다. 본 논문에서는 소프트웨어의 품질에 관한 국제표준인 ISO/IEC 9126의 품질특성 중 신뢰성에 대한 품질특성, 부특성, 내부특성의 체계에 따른 메트릭과 품질측정표를 개발함으로써 관련 내부특성의 품질평가를 통해 신뢰성에 대한 평가 결과를 산출할 수 있는 체계를 확립하고 내부특성을 이용하여 개발산출물에 대해 평가한 결과를 제시하였다. Software is developing toward having more large scale and many functions day by day. Also, user’s requirements level for software is being high, especially, requirements for software quality is being high continuously. Methods which can satisfy such User’s requirements is being studied in various viewpoint. First of all, study about quality evaluation system and methodology is energetically in progress in viewpoint to improve quality of software by feed-back software quality evaluation result to developers. In this paper, we define metrics according to a system and developed quality measurement tables according to internal characteristics system of quality characteristics, subcharacteritics, internal characteristics for reliability between quality characteristics of international standard, ISO/IEC 9126 about software quality. And we propose evaluation results about development products using internal characteristics.
금속-절연층-실리콘 구조에서의 비정질 GeSe 기반 Resistive Random Access Memory의 동작 특성
남기현,김장한,정홍배,Nam, Ki-Hyun,Kim, Jang-Han,Chung, Hong-Bay 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.7
The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).