플라즈마 스프레이 방법으로 코팅 된 $Al_2O_3$막의 구조적 특성

김좌연,유재근,설용태,Kim, Jwa-Yeon,Yu, Jae-Keun,Sul, Yong-Tae 한국결정성장학회 2006 韓國結晶成長學會誌 Vol.16 No.3

반도체 드라이 에처 시스템의 웨이퍼 정전기 척에 적용하기 위해 플라즈마 스프레이 방법으로 Al-60 계열 기판에 코팅한 $Al_2O_3$ 코팅 막의 특성을 조사하였다. 시편 뒷면에 냉각봉이 장착되었을 때와 없을 때, 용사거리와 분말공급량을 변형하면서 $Al_2O_3$ 막 코팅을 하여 시편을 제작 하였다. 시편 뒷면에 냉각봉이 없을 때는 크랙과 기공이 많이 발생하였다. 시편 뒷면에 냉각봉을 장착하고 분말공급량을 15g/min로 한 경우에 용사거리 60, 70, 80mm에 따른 $Al_2O_3$ 코팅에서는 크랙과 기공은 거의 찾아볼 수 없었다. 용사거리 변화에 따른 $Al_2O_3$ 막 코팅의 표면형태 변화는 없었다. 같은 공정조건에서 분말 공급량을 20g/min로 한 경우에도 크랙은 볼 수 없었으나 약간의 기공이 생겼고, 분말공급량을15g/min로 하였을 때 보다 작은 입자들이 많이 증착되었다. 시편 뒷면에 냉각봉이 없을 때가 시편 뒷면에 냉각봉이 장착된 경우에 비하여 증착 속도가 빨랐다. We have investigated plasma spray coated $Al_2O_3$ layers on Al-60 series substrates for development of wafer electrostatic chuck in semiconductor dry etching system. Samples were prepared without/with cooling bar on backside of samples, at various distances, and with different powder feed rates. There were many cracks and pores in the $Al_2O_3$ layers coated on Al-60 series substrates without cooling bar on the backside of samples. But the cracks and pores were almost disappeared in the $Al_2O_3$ layers on Al-60 series substrates coated with cooling bar on the back side of samples, 15 g/min. powder feed rate and various 60, 70, 80 mm working distances. Then the surface morphology was not changed with various working distances of 60, 70, 80 mm. When the powder feed rate was changed from 15 g/min to 20 g/min, the crack did not appear, but few pores appeared. Also the $Al_2O_3$ layer was coated with many small splats compared with $Al_2O_3$ layer coated with 15 g/min powder feed rate. The deposited rate of $Al_2O_3$ layer was higher when the process was done without cooling bar on the back side of sample than that with cooling bar on the back side of sample.

MOCVD방법으로 InP 기판 위에 성장시킨 InAs 박막에서의 부정합 전위 생성 연구

김좌연,윤의중,박경순,Kim, Jwa-Yeon,Yun, Eui-Jung,Park, Kyeong-Soon 한국현미경학회 1997 Applied microscopy Vol.27 No.4

A misfit dislocation generation in InAs epilayers grown on (001) InP substrates (oriented $2^{\circ}$ off (001) toward the [110] direction) using metalorganic chemical-vapor deposition was studied. The InAs film of 17 nm thickness grown at $405^{\circ}C$ showed the three different arrays of dislocations: a straight orthogonal array to the <110> direction, an array to the >100> direction, and an array tilted by a degree of $5\sim45^{\circ}$ from the [110] direction. All of the dislocations had a/2<101> Burgers vectors inclined $45^{\circ}$ to the interface. Upon annealing at $660^{\circ}C$ the InAs films with 60, 140 and 220 nm thicknesses, most of the misfit dislocations became the Lomer type $(\sim100%)$ oriented exactly along the >110> direction. These misfit dislocation spacings were decreased with increasing the InAs thickness up to 220 nm thickness. This phenomena was interpreted by the relationship between the dislocation interaction energy among parallel misfit dislocations and the opposite remnant InAs epilayer strain energy. The distance between misfit dislocations was measured by transmission electron microscopy.

RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H₂/(Ar + H₂) 가스 비율에 따른 특성

김좌연,한정수,Kim, Jwa-Yeon,Han, Jung-Su 한국결정성장학회 2012 한국결정성장학회지 Vol.22 No.3

$Al_2O_3$ 2 wt%가 도핑 된 ZnO(AZO) 타겟으로RF 스퍼터링 장비를 사용하여 $H_2/(Ar+H_2)$ 가스 비율에 따른 AZO 박막을 증착 후, 이들 박막의 특성을 조사하였다. AZO 박막은 $200^{\circ}C$, $2{\times}10^{-2}$ 공정조건에서 $H_2/(Ar+H_2)$ 가스 비율을 변화시키면서 증착하였다. AZO박막증착 중 수소가스의 첨가는 박막의 특성에 영향을 미쳤다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 %일 때 비 저항(${\sim}9.21{\times}10^{-4}\;{\Omega}cm$)과 전자 이동도(${\sim}17.8\;cm^2/Vs$)는 각각 최소값과 최대값을 나타내었다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 % 이상일 때는 $H_2/(Ar+H_2)$ 가스 비율이 증가할수록 비저항은 점차로 증가하였고 전자 이동도는 점차적으로 감소하였다. 전자 운반자 농도는 $H_2/(Ar+H_2)$ 가스 비율이 증가함에 따라 0 %에서 7.5 %까지 점차로 증가하였다. $H_2/(Ar+H_2)$ 가스 비율에 따라 증착된 박막의 가시광선 파장 범위에서 평균 광 투과도는 90 % 이상이었고 성장방향은 [002]이었다. The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

플라즈마 처리에 의한 마스크 특성 변화

김좌연,최상수,강병선,민동수,안영진,Kim, Jwa-Yeon,Choi, Sang-Su,Kang, Byung-Sun,Min, Dong-Soo,An, Young-Jin 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.2

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

상압화학기상 증착법에 의한 반도체탄소나노튜브의 성장과 $300^{\circ}C$ 대기에서의 산화열처리 효과

김좌연,Kim, Jwa-Yeon 한국결정성장학회 2005 한국결정성장학회지 Vol.15 No.2

[ $SiO_2$ ]로 산화된 웨이퍼 위에 상압화학기상증착 기술로 반도체 탄소나노튜브를 성장했으며, 이 나노튜브의 전기적 특성을 조사하였다. 전기적 특성은 반도체 탄소나노튜뷰를 $300^{\circ}C$, 대기 중에서 산화 열처리 시간을 변화시키면서 상온대기에서 측정하였다. 반도체 탄소나노튜브는 $300^{\circ}C$에서 산화 열처리 시간을 증가할수록 점차적으로 금속 탄소나노튜브로 변형되는 것을 보았다. 탄소나노튜브는 $300^{\circ}C$, 대기에서 6시간 동안 산화 열처리 후 표면의 일부가 없어지는 현상을 투과 전자현미경으로 확인하였다. Semiconductor carbon nanotube was grown on oxided silicon wafer with atmosphere pressure chemical vapor deposition (APCVD) method and investigated the electrical property after thermal oxidation at $300^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at $300^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at $300^{\circ}C$ in air. Some removed area of carbon nanotube surface was shown with transmission electron microscopy (TEM) after thermal oxidation for 6 hours at $300^{\circ}C$ in air.

Dependency of Long-range Order Parameter on the Ordered Structure of $Pb(Mg_{1/3}Nb_{2/3})O_3$ Solid Solutions

박경순,김좌연,이재원,김광배,Park, Kyeong-Soon,Kim, Jwa-Yeon,Lee, Jae-Won,Kim, Kwang-Bae Korean Society of Electron Microscopy 1998 Applied microscopy Vol.28 No.3

[ $Pb(Mg_{1/3}Nb_{2/3})O_3$ ] (PMN) 고용체의 고분해능 격자 이미지에 있어서 장거리 규칙도의 의존성을 컴퓨터 이미지 시뮬레이션을 이용하여 연구하였다. 컴퓨터 이미지 시뮬레이션은 multislice 방법으로 시편 두께, 초점 거리, 장거리 규칙도를 변화시켜 실시하였다. PMN에 있어서, 규칙격자 구조를 가지는 격자 이미지는 장거리 규칙도에 주로 의존하는 것을 발견하였다. 완전한 규칙격자 구조를 가지는 이미지는 유사 육방정 형태를 보였다 장거리 규칙도가 감소함에 따라, 유사 육방정 형태로부터 직사각형 형태로 변화되었고, 완전한 불규칙격자 구조를 가지는 이미지는 직사각형 형태를 보였다. 또한, 한 주어진 장거리 규칙도에서 시뮬레이션으로 얻은 이미지는 B-위치 양이온의 함량에 관계없이 거의 동일하였다. The dependency of long-range order parameter on the ordered structure of $Pb(Mg_{1/3}Nb_{2/3})O_3$ solid solutions has been investigated by means of computer simulations of high-resolution lattice images. The computer image simulations were performed by the multislice method in a wide range of sample thicknesses, defocusing values, and long-range order parameters. It was found that the lattice images of the ordered structures were predominantly dependent on the long-range order parameter, The lattice images in a complete ordered structure showed a pseudo-hexagonal pattern. As the order parameter decreases, the simulated images changed slowly from a pseudo-hexagonal pattern to a rectangular pattern. The lattice images in a complete disordered structure showed a rectangular pattern. Also, the simulated images of the $Pb(Mg_xNb_{1-x})O_3$ with different Mg:Nb ratios obtained at a given long-range order parameter were basically the same patterns, irrespective of Mg and Nb compositions.

병렬구조의 압력측정 시스템 개발

윤의중,김좌연,이강원,이석태,Yun, Eui-Jung,Kim, Jwa-Yeon,Lee, Kang-Won,Lee, Seok-Tae 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.4

In this paper, we developed a pressure measurement apparatus with the parallel structure to improve the measurement efficiency of pressure sensors by reducing the measurement time of pressure. The developed system has two parallel positions for loading Silicon pressure sensor and has a dual valve structure. The semiconductor pressure sensors prepared by Copal Electronics were used to confirm the performance of the developed measurement system. Two stage differential amplifier circuit was employed to amplify the weak output signal and the amplified output signal was improved utilizing a low-pass filter. New apparatus shows the measurement time of pressure two times shorter than that of conventional one with the serial structure, while both structures show the similar linear output versus pressure characteristics.

Cu 와 Si 사이에서 확산방지막으로 사용하기위한 ZrN 층의 연구

김창조(Chang Jo Kim),김좌연(Jwa Yeon Kim),윤의중(Eui Jung Yun),이재갑(Jae Gab Lee) 한국전기전자재료학회 1998 한국전기전자재료학회 추계학술대회논문집 Vol.1998 No.0

N/A N/A

분무열분해 공정에 의한 폐액으로부터 니켈 페라이트 나노 분말 제조

유재근,서상기,강성구,김좌연,박시현,김용수,최재하,손진군,Yu Jae-Keun,Suh Sang-Kee,Kang Seong-Gu,Kim Jwa-Yeon,Park Si-Hyun,Park Yaung-Soo,Choi Jae-Ha,Sohn Jin-Gun 한국자원리싸이클링학회 2003 資源 리싸이클링 Vol.12 No.4

In order to efficiently recycle the waste solution resulting from shadow mask processing, nano-sized Ni-ferrite powder was fab-ricated through spray pyrolysis process. The average particle size of the powder was below 100nm. In this study, the effects of the reaction temperature. the concentration of raw material solution and the injection speed of solution on the properties of powder were respectively investigated. As the reaction temperature increased from $800^{\circ}C$ to $1100^{\circ}C$, average particle size of the powder significantly Increased and power structure became more solid, whereat its specific surface area was greatly reduced. Formation rate and crystallization of($NiFe_2$$O_4$) phale increased along with the temperature rise. As the concentrations of iron and nickel components in wastere solution increased, particle size of the powder became larger, particle size distribution became more irregular, and specific surface area was reduced. Formation rate and crystallization of $NiFe_2$$O_4$ phase increased significantly along with the increase of the concentration of solution. As the inlet speed of solution increased, particle size of the powder became larger, particle size distribution became wider, specific surface area was reduced and powder structure became less solid. As the inlet speed of solution decreased, formation rate and crystallization of $NiFe_2$$O_4$ phase significantly increased. 본 연구에서는 새도우마스크 제조공정 중 발생되는 Fe-Ni 계 폐산용액을 효율적으로 재활용하기 위하여 폐산용액을 자체 제작한 분무열분해 system을 이용하여 분무열분해시킴에 의해 평균입도 100nm 이하의 니켈 페라이트($NiFe_2$$O_4$)나노 분발을 제조하였으며 반응온도, 용액의 농도 및 용액 유입속도의 반응인자들의 변화에 따른 생성된 분발의 특성변화를 파악하였다. 반응온도가 800∼$1100^{\circ}C$ 로 증가함에 따라 분무열분해 공정에 의해 생성된 분말의 평균입도가 현저히 증가하였고 점점 치밀한 조직을 나타내었으며 비표면적은 크게 감소하였다. 반응온도의 증가에 따라 니첼 페라이트 상의 생성비율 및 결정성이 증가하였다. 원료용액의 농도가 증가됨에 따라 분말의 평균입도는 점점 증가하고 비표면적은 감소하는 반면 입도분포는 더욱 불규칙하게 나타났다. 용액의 농도 증가에 따라 니켈 폐라이트 상의 생성비율 및 결정성은 현저히 증가하고 있었다. 용액의 유입속도 증가에 따라 분말들의 평균입도는 현저히 증가하고 비표면적은 감소하는 반면 입도분포는 불규칙하게 되며 조직의 치밀성도 감소하였다. 용액의 유입속도 감소에 따라 니켈 폐라이트 상의 결정성 및 생성비율이 현저히 증가하고 있었다.

압저항 압력센서 응용을 위한 TMAH/AP/IPA 용액의 실리콘 이방성 식각특성에 대한 연구

윤의중(Eui-Jung Yun),김좌연(Jwa-Yeon Kim),이태범(Tae-Bum Lee),이석태(Seok-Tae Lee) 大韓電子工學會 2004 電子工學會論文誌-SD (Semiconductor and devices) Vol.41 No.3