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옥외 관측을 통한 EVA, POE PV모듈의 열화 연구
김제하,Kim, Jeha 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.12
Using both EVA and POE encapsulants, we fabricated polycrystalline Si PV modules and performed a set of reliability tests of PID, DH, TC, and Complex prior to outdoor installation. The power output with temperatures and insolation as well as I-V characteristics had been monitored under outdoor environments for 18 months. In the entire period, the total power of 3,576 kWh from POE PV modules was observed larger than 3,449 kWh from EVA PV modules by 3.5%. All the PV modules showed a 5.6~9.2% drop in the conversion efficiency. As for the solar power generation, the PV modules performed through PID, TC test revealed distinct difference in between EVA and POE for which the POE PV module produced more power by +11.4% and +6.6%, respectively, as measured in the 18th month. In addition, POE was proved to protect better the solar cells under PID influence.
황화급속열처리를 이용한 SnS 박막성장 및 온도의존성 연구
심지현,김제하,Shim, Ji-Hyun,Kim, Jeha 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.2
We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.
플렉서블 CIGS 태양전지의 굽힘 응력에 의한 셀 특성 변화 연구
김성준,김제하,Kim, Sungjun,Kim, Jeha 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.3
We studied the change of photovoltaic properties of a flexible CuIn<sub>x</sub>Ga(<sub>1-x</sub>)Se<sub>2</sub> (CIGS) solar cell fabricated on polyimide by mechanical bending with curvature radii of 75 mm (75R) and 20 mm (20R). The flexible CIGS cells were flattened on a PET film, then placed and forced against the surface of a curved block fabricated with pre-designed curvatures. Both up (compressive) and down (tensile) bending were applied to a specimen of CIGS on PET with curvatures of 75R and 20R for 10,000 times and 2,000 times, respectively. From J-V measurements, we found that the conversion efficiency (Eff.) was reduced by 3% and 4% for up-and down-bending, respectively, at curvature 75R; it was greatly reduced by 15% for curvature 20R in the up-bending. However, the open circuit voltage (V<sub>oc</sub>) and short-circuit current density (J<sub>sc</sub>) seemed to change little, within 3%, for the applied mechanical stresses. The degradation in Eff. resulted from the deterioration of the series (R<sub>s</sub>) and shunt (R<sub>sh</sub>) resistances of the solar cell.
E-빔 증착된 Sn 전구체의 황화 열처리 온도 및 시간에 따른 SnS<sub>x</sub> 박막 성장 효과
황팅지엔,김제하,Huang, Tingjian,Kim, Jeha 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.11
We prepared $SnS_x$ thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures ($Ts=200^{\circ}C$, $230^{\circ}C$, $250^{\circ}C$, and $300^{\circ}C$) and annealing times ($t_s=10min$ and 30 min). The single SnS phase was dominant for $200^{\circ}C{\leq}T_s$<$250^{\circ}C$, while an additional phase of $SnS_2$ was appeared at $T_s{\geq}250^{\circ}C$ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy ($E_g$) of the films was estimated to be 1.24 eV.
측면입사광에 대한 SiOx 무반사 회절격자 결합 c-Si PV 서브-모듈의 광전변환효율 향상
심지현,김제하,Shim, Ji-Hyun,Kim, Jeha 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.5
We fabricated 1-D and 2-D diffraction gratings of SiOx anti-reflection (AR) film grown on a quartz substrate and integrated them into a c-Si photovoltaic (PV) submodule. The light-trapping effect of the resulting submodules was studied in terms of the oblique optical incident angle, ${\theta}_i$. As the ${\theta}_i$ increased, solar conversion efficiency, ${\eta}$, was improved as expected by the increased optical transmission caused by the grating. For ${\theta}_i{\leq}30^{\circ}$, the relative solar conversion efficiency, ${\Delta}{\eta}$, of a 1-D SiOx (t=300 nm) grating, compared to that of a flat SiOx AR-coated integrated PV submodule, was improved very little, with a small variation of within 2%, but increased markedly for ${\theta}_i{\geq}40^{\circ}$. We observed a change of ${\Delta}{\eta}$ as large as 10.7% and 9.5% for the SiOx grating of period t=800 nm and 1200 nm, respectively. For a 2-D SiOx (t=300 nm) grating integrated PV submodule, however, the optical trapping behavior was similar in terms of ${\theta}_i$ but its variation was small, within ${\pm}1.0%$.
이차란,김제하,Lee, Cha Ran,Kim, Jeha 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.3
We prepared ZnS thin films via chemical bath deposition (CBD) in an aqueous solution of ammonia ($NH_3$) and hydrazine ($N_2H_4$). The composition ratio of hydrazine used was 0%, 17%, 22%, 29%, or 50%. We investigated the effects of hydrazine and ammonia on the growth, and the structural and optical properties of ZnS in terms of surface uniformity, voids, and grain size. We found that during the growth of ZnS films, hydrazine was very effective for improving the surface morphology and layer uniformity with fast layer formation, while it had no effect on the bandgap energy, $E_g$.
투명 전극 ITO/Ag/ITO 박막의 광학적 및 전기적 특성 향상 연구
신연배,강동원,김제하,Shin, Yeon Bae,Kang, Dong-Won,Kim, Jeha 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.11
Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).
RF/DC 스퍼터 성장한 ITO/Ag/ITO 투명전극 박막의 특성 연구
이영재(Youngjae Lee),김제하(Jeha Kim) 한국태양광발전학회 2022 Current Photovoltaic Research Vol.10 No.1
We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t0)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t0 = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R□=7.24 Ω/□.