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김광호,김제덕,이상우 청주대학교 산업과학연구소 1997 産業科學硏究 Vol.15 No.-
A prototype MFSFET using ferroelectric fluoride BaMgF_(4) as a gate insulator has been successfully fabricated with the help of 2 sheets of metal mask. The fluoride film was deposited in an ultra-high vacuum system at a substrate temperature of below 300 ℃ and an in-situ post-deposition annealing was conducted for 10 seconds at 600 ℃ in the same chamber The interface state density of the BaMgF_(4)/S_(1)(100) interface calculated by an MFS capacitor fabncated on the same wafer was about 8×10^(10) /㎠ ·eV. The I_(D)-V_(G) characteristics of the MFSFET shows a hysteresis loop due to the ferroelectric nature of the BaMgF_(4) film.
Al-2.5wt% Li 합금의 시효특성에 미치는 Mg 첨가효과
박중근,김제덕 대한금속재료학회(대한금속학회) 1991 대한금속·재료학회지 Vol.29 No.1
The effects of Mg addition on the aging characteristics of Al-2.5wt%Li alloys have been studied using transmission electron microscopy and differential scanning calorimetry. Results of lattice parameter measurement suggested that the Mg atoms tend to dissolve in the δ' particles. The coarsening of δ' particles generally obeys the LSW kinetics and its rate constant appears not to be much affected by the Mg addition. The kinetics of the precipitation of b phase could be best described by a kinetic law of Avrami type with n=1.5. The addition of 1wt% Mg results in a decrease of the activation energy for the formation of the 8 phase from 141KJ/mole to 137KJ/mole.