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김공원(K.W. Kim),곽규석(K.S. Kwak),김근섭(G.S. Kim) 한국항해항만학회 2002 한국항해항만학회 학술대회논문집 Vol.1 No.-
Busan Port which is the representative social overhead capital facilities for international trade of goods has been the driving force for economic development in Korea. Therefore, the central government should play the major role in building a rear road to Busan Port in order that it may function as a mojor port of Northeastern Asia through the systemization of mutual assistance among connected facilities, completely equipped with port-related facilities befitting to the principal port of imports and exports. In this study, the validity of container tax is being examined, analyzing container tax which is considered as an obstacle to the development of Busan Port and its purpose, and grasping the present conditions by the realistic speculation on container tax issues and its abolition. First, the port rear road as a social overhead capital facilities, which connects port and expressway, should be considered as part of port, and port is social overhead capital invested by government. Second, the Busan City imposes on container tax. As a result, a shipper and a ship-ping company are paying a double charge by paying container tax with port dues. Third, someone argues that port rear road is constructed as container truck generates much traffic, but it is unreasonable to conclude that container truck is seed of traffic jam because according to traffic survey of Busan City, container truck occupies only 1.45% of total traffic. Forth, it has bad influence upon the competitiveness of Busan Port as Northeastern logistics base, as other ports who are competing with Busan Port like Singapore, Hong kong, Kobe make their competitiveness strong by decreasing the cost of port dues.
실리콘 직접 접합 / 전기화학적 식각정지를 이용한 실리콘 다이아프램의 형성과 실리콘 압력센서 제조에의 응용
주병권,하병주,김근섭,송만호,김성환,김철주,차균현,오명환 ( B . K . Ju,B . J . Ha,K . S . Kim,M . H . Song,S . H . Kim,C . J . Kim,K . H . Tchah,M . H . Oh ) 한국센서학회 1994 센서학회지 Vol.3 No.3
A new type of Si diaphragm was fabricated using Si-wafer direct bonding and two-step electrochemical etch-stopping methods. Using the new diaphragm structure in mechanical sensors, more precise control of cavity depth and diaphragm thickness was achievable. Also, the propagation of the stress, which was generated near the bonding interface, to the surface can be avoided. Finally, a piezoresistive-type Si pressure sensor was fabricated utilizing the diaphragm and a digital pressure gauge, which can display units of pressure, was realized.