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곽용수,송종현,김지환,김진희 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.8
A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electronic properties of the 2-dimensional electron gas at the LAO/STO hetero-interface were not changed by covering LAO with PMMA following the Au top gate electrode. A split gate device was also fabricated to construct depletion mode by using a narrow constriction between the LAO/STO conduction interface. The depletion mode, as well as superconducting critical current, could be controlled by applying a split gate voltage. Noticeably, the superconducting critical current tended to decrease with decreasing the split gate voltage and finally became zero. These results indicate that a weak-linked Josephson junction can be constructed and destroyed by split gating. This observation opens the possibility of gate-voltage-adjustable quantum devices.
유리섬유 강화 플라스틱 노트북 커버의 전사성에 관한 연구
곽용수,한성렬,Kwak, Yong-Soo,Han, Seong-Ryeol 한국금형공학회 2016 한국금형공학회지 Vol.10 No.3
The purpose of this study is to build effective cooling circuit design in injection mold to improve glass fiber reinforced laptop computer cover plastics' transcription and gloss. Moldflow Insight and Ansys CFD CAE program used to verify efficiency and the experiment mold is precision machined and brazing soldered to make three-dimension cooling channel. The temperature of mold in injection test are fixed to $80^{\circ}C$ and $160^{\circ}C$. The result of this experiment is the improved surface quality of plastics with 85% improvement of transcription in high temperature mold.
TbMn₂O<SUB>5</SUB> 박막의 합성과 증착 온도에 따른 결정 구조 및 자성 특성 변화
곽용수(Yongsu Kwak),송종현(Jonghyun Song),이두표(Doopyo Lee) 한국자기학회 2020 韓國磁氣學會誌 Vol.30 No.1
We grew TbMn₂O<SUB>5</SUB> thin films on Nb doped TiO₂(110) substrates at different temperatures and studied the influence of growth temperature on their physical properties. When the growth temperature was 700℃, the preferred crystal orientation perpendicular to the film surface was TbMn₂O<SUB>5</SUB>(002) whereas it was turned to (211) with increasing the growth temperature to 950℃. For the sample with the growth temperature of 750℃, the domains with the crystal orientations of TbMn₂O<SUB>5</SUB>(002) and TbMn₂O<SUB>5</SUB>(211) were mixed. For magnetic properties, the phase transition from paramagnetic to ferromagnetic was observed at about 43K for all samples studied. However, the larger the coercive field and magnetic hysteresis were observed with decreasing the growth temperature. These observations indicate that the growth temperature is an important parameter in determining the crystal orientation and magnetic property of TbMn₂O<SUB>5</SUB> thin film.