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Sn3.5Ag와 Sn0.7Cu 무연솔더에 대한 고온 진동 신뢰성 연구
고용호,김택수,이영규,유세훈,이창우,Ko, Yong-Ho,Kim, Taek-Soo,Lee, Young-Kyu,Yoo, Sehoo,Lee, Chang-Woo 한국마이크로전자및패키징학회 2012 마이크로전자 및 패키징학회지 Vol.19 No.3
본 연구에서는 고 융점을 지니는 Sn-3.5Ag, Sn-0.7Cu 솔더의 복합 진동 신뢰성을 고찰하였다. 테스트 샘플은 ENIG (Electroless Nikel Immersion Gold) 표면처리 된 BGA (Ball Grid Array)칩에 Sn-3.5Ag, Sn-0.7Cu 솔더볼을 접합 후, 솔더볼이 장착된 BGA부품을 OSP (Organic Solderability Preservative) 표면처리 된 PCB에 리플로우 공정을 통하여 실장 하였다. 복합 진동 신뢰성 시험 중에 부품의 저항 변화를 측정하기 위하여 BGA칩과 PCB는 데이지 체인을 구성하여 제작하였다. 이를 통한 저항의 변화와 시험 전후의 부품에 대한 전단 강도 시험을 통하여 두 종류의 솔더에 대한 복합환경에서의 신뢰성을 비교, 평가하였다. 120시간 복합 진동 동안 전기저항 증가와 접합강도 저하를 고려할 때 Sn-0.7Cu 솔더가 복합 환경에서 높은 안정성을 나타내었다. In this study, the complex vibration reliability of Sn-3.5Ag and Sn-0.7Cu having a high melting temperature was investigated. For manufacturing of BGA test samples, Sn-3.5Ag and Sn-0.7Cu balls were joined on BGA chips finished by ENIG and the chips were mounted on PCB finished OSP by using reflow process. For measuring of resistance change during complex vibration test, daisy chain was formed in the test board. From the results of resistance change and shear strength change, the reliability of two solder balls was compared and evaluated. During complex vibration for 120 hours, Sn-0.7Cu solder was more stable than Sn-3.5Ag solder in complex vibration test.
용융 금속 TSV 충전을 위한 저열팽창계수 SiC 복합 충전 솔더의 개발
고영기,고용호,방정환,이창우,Ko, Young-Ki,Ko, Yong-Ho,Bang, Jung-Hwan,Lee, Chang-Woo 대한용접접합학회 2014 대한용접·접합학회지 Vol.32 No.3
Among through silicon via (TSV) technologies, for replacing Cu filling method, the method of molten solder filling has been proposed to reduce filling cost and filling time. However, because Sn alloy which has a high coefficient of thermal expansion (CTE) than Cu, CTE mismatch between Si and molten solder induced higher thermal stress than Cu filling method. This thermal stress can deteriorate reliability of TSV by forming defects like void, crack and so on. Therefore, we fabricated SiC composite filling material which had a low CTE for reducing thermal stress in TSV. To add SiC nano particles to molten solder, ball-typed SiC clusters, which were formed with Sn powders and SiC nano particles by ball mill process, put into molten Sn and then, nano particle-dispersed SiC composite filling material was produced. In the case of 1 wt.% of SiC particle, the CTE showed a lowest value which was a $14.8ppm/^{\circ}C$ and this value was lower than CTE of Cu. Up to 1 wt.% of SiC particle, Young's modulus increased as wt.% of SiC particle increased. And also, we observed cross-sectioned TSV which was filled with 1 wt.% of SiC particle and we confirmed a possibility of SiC composite material as a TSV filling material.
3D 웨이퍼 전자접합을 위한 관통 비아홀의 충전 기술 동향
고영기,고용호,방정환,이창우,Ko, Young-Ki,Ko, Yong-Ho,Bang, Jung-Hwan,Lee, Chang-Woo 대한용접접합학회 2014 대한용접·접합학회지 Vol.32 No.3
Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.
Au 스터드 범프와 Sn-3.5Ag 솔더범프로 플립칩 본딩된 접합부의 미세조직 및 기계적 특성
이영규,고용호,유세훈,이창우,Lee, Young-Kyu,Ko, Yong-Ho,Yoo, Se-Hoon,Lee, Chang-Woo 대한용접접합학회 2011 대한용접·접합학회지 Vol.29 No.6
The effect of flip chip bonding parameters on formation of intermetallic compounds (IMCs) between Au stud bumps and Sn-3.5Ag solder was investigated. In this study, flip chip bonding temperature was performed at $260^{\circ}C$ and $300^{\circ}C$ with various bonding times of 5, 10, and 20 sec. AuSn, $AuSn_2$ and $AuSn_4$ IMCs were formed at the interface of joints and (Au, Cu)$_6Sn_5$ IMC was observed near Cu pad side in the joint. At bonding temperature of $260^{\circ}C$, $AuSn_4$ IMC was dominant in the joint compared to other Au-Sn IMCs as bonding time increased. At bonding temperature of $300^{\circ}C$, $AuSn_2$ IMC clusters, which were surrounded by $AuSn_4$ IMC, were observed in the solder joint due to fast diffusivity of Au to molten solder with increased bonding temperature. Bond strength of Au stud bump joined with Sn-3.5Ag solder was about 23 gf/bump and fracture mode of the joint was intergranular fracture between $AuSn_2$ and $AuSn_4$ IMCs regardless bonding conditions.