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영상처리 기법을 이용한 샥-하트만 파면 센서의 측정범위 확장에 대한 연구
김민석,김지연,엄태경,윤성기,이준호,Kim, Min-Seok,Kim, Ji-Yeon,Uhm, Tae-Kyung,Youn, Sung-Kie,Lee, Jun-Ho 한국광학회 2007 한국광학회지 Vol.18 No.6
샥-하트만 센서는 렌즐릿 배열을 이용하여 파면의 국부적인 기지를 계산하고 이로부터 파면의 왜곡된 정도를 측정하는 파면측정 센서이다. 일반적으로 하나의 점영상에 대한 중심점을 추출하여 기준 점영상의 중심점에 대한 상대적 이동량을 통해 파면의 국부 기울기를 계산, 전체 파면을 복원하는 원리이다. 따라서 하나의 점영상에 대한 정확한 중심점의 추출을 위하여 해당하는 하부개구 내에 점영상이 존재하여야 한다. 하지만 큰 기울기의 파면이 샥-하트만 센서에 입사하게 되면 측정범위를 벗어나게 되어 일반적인 방법으로는 파면의 국부적인 기울기를 계산할 수 없게 되는 문제점이 있다. 이를 해결하기 위해 특정 측정시스템에만 국한된 알고리즘이 아닌 모든 파면에 대해 측정 가능하면서도 추가적인 장비 없이 일반적인 샥-하트만 파면 센서가 지니고 있는 측정범위의 한계를 극복할 수 있는 알고리즘이 필요하다. 본 연구에서는 영상처리 기법을 이용하여 각 점영상에 대한 유동적인 탐색영역을 설정하고 이러한 탐색영역 내에서 중심점을 추출하는 방법을 제안하였다. 또 점영상 대응법을 적용하여 측정 점영상과 기준 점영상을 일대일 대응시킴으로써 전체 측정파면을 복원할 수 있는 알고리즘을 제안함으로써 측정범위에 제한 없이 파면왜곡을 측정할 수 있는 측정방법을 제시하였다. 이렇게 제안된 알고리즘을 샥-하트만 파면 센서 시스템을 이용한 초점벗어남 측정실험을 통하여 검증하였다. The Shack-Hartmann wavefront sensor is composed of a lenslet array generating the spot images from which local slope is calculated and overall wavefront is measured. Generally the principle of wavefront reconstruction is that the spot centroid of each lenslet array is calculated from pixel intensity values in its subaperture, and then overall wavefront is reconstructed by the local slope of the wavefront obtained by deviations from reference positions. Hence the spot image of each lenslet array has to remain in its subaperture for exact measurement of the wavefront. However the spot of each lenslet array deviates from its subaperture area when a wavefront with large local slopes enters the Shack-Hartmann sensor. In this research, we propose a spot image searching method that finds the area of each measured spot image flexibly and determines the centroid of each spot in its area Also the algorithms that match these centroids to their reference points unequivocally, even if some of them are situated off the allocated subaperture, are proposed. Finally we verify the proposed algorithm with the test of a defocus measurement through experimental setup for the Shack-Hartmann wavefront sensor. It has been shown that the proposed algorithm can expand the dynamic range without additional devices.
BTMSM/$O_2$ 고유량으로 증착된 low-k SiOCH 박막의 전기적인 특성
김민석,황창수,김홍배,Kim, Min-Seok,Hwang, Chang-Su,Kim, Hong-Bae 한국반도체디스플레이기술학회 2008 반도체디스플레이기술학회지 Vol.7 No.1
We studied the electrical characteristics of low-k SiOCR interlayer dielectric(ILD) films fabricated by plasma enhanced chemical vapor deposition (PECVD). The precursor bis-trimethylsilylmethane (BTMSM) was introduced into the reaction chamber with the various flow rates. The absorption intensities of Si-O-$CH_x$, bonding group and Si-$CH_x$, bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$, combined bonds. The SiOCH films revealed ultra low dielectric constant around 2.1(1) and reduced further below 2.0 by heat treatments.
요추추간판탈출증에 대한 일반침 치료와 간접구 병행치료의 임상적 효과비교
김민석,박재연,최유진,윤경진,전재천,이태호,이은용,노정두,Kim, Min-Seok,Park, Jae-Yeon,Choi, You-Jin,Yoon, Kyoung-Jin,Jeon, Jae-Cheon,Lee, Tae-Ho,Lee, Eun-Yong,Roh, Jeong-Du 대한침구의학회 2011 대한침구의학회지 Vol.28 No.1
Objectives : The purpose of this study was to evaluate the clinical effect of indirect moxibustion treatment for HIVD patients. Methods : From March 2010 to December 2010, 32 HIVD patients who admitted to Semyung oriental medical hospital were divided into two groups. Group I was treated by indirect moxibustion and general acupuncture, group II by general acupuncture. We evaluated the treatment effect of each group with the visual analog scale(VAS) and Oswestry disability index(ODI) by dividing three period(from admission day to third day after admission, from third day to sixth day after admission and from sixth day to ninth day after admission). Results : 1. Group I was more effective than group II in VAS score reducing rate at sixth day after admission and ninth day after admission but there was no statistical significance between two groups at third day after admission 2. Group I was more effective than group II in VAS improvement rate from third day to sixth day after admission but there was no statistical significance between two groups from admission day to third day after admission and sixth day to ninth day after admission. 3. Group I was more effective than group II in ODI score reducing rate at sixth day after admission and ninth day after admission but there was no statistical significance between two groups at third day after admission. 4. In ODI improvement rate group I was higher than group II, but there was no statistical significance. Conclusions : Through this research, Indirect moxibustion treatment is considered to be effective reducing pain for HIVD(Herniated intervertebral disc) patients.
BTMSM/O<sub>2</sub> 고유량으로 증착된 SiOCH 박막의 2차원 상관관계 분석을 통한 유전특성 연구
김민석,황창수,김홍배,Kim, Min-Seok,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.6
We have studied the dielectric characteristics of low-k interlayer dielectric materials fabricated by PECVD for various precursor's flow rates. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. The absorption intensities of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group changed synchronously for the variation of precursor flow rate, but the intensity of Si-O-Si(C) responded asynchronously with the $CH_x$ combined bonds. The heat treatment reduced the FTIR absorption intensity of Si-O-$CH_x$ bonding group and Si-$CH_x$ bonding group but increased the intensity of Si-O-Si(C). The nanopore and free space formed by the increasement of caged link mode and cross link mode of Si-O-Si(C) group implied the origin of low-k SiOCH films.
집중호우의 시·공간적 특성과 유역특성을 고려한 강우분석 연구
김민석,최지혁,문영일,Kim, Min-Seok,Choi, Ji-Hyeok,Moon, Young-Il 한국수자원학회 2018 한국수자원학회논문집 Vol.51 No.8
최근 집중호우의 발생빈도가 증가하고 있으며, 이를 고려한 강우분석을 실시하여야 한다. 현재 수문설계를 위한 강우분석은 한반도 조밀도 36 km인 기상청 관할 종관기상관측지점(Automated Surface Observing System, ASOS)의 시 단위 강우를 이용하고 있다. 이로 인해 같은 강우지점의 티센망에 포함되는 중소규모 유역은 동일한 확률강우량과 강우시간분포로 분석하게 됨으로 유역특성을 고려하지 못하는 문제가 발생한다. 또한, 10~20 km 범위 내에서 발생하는 집중호우의 시 공간적 변화를 고려하지 못하는 문제점이 발생한다. 따라서 본 연구에서는 종관기상관측지점에 비해 상대적으로 조밀도가 우수한 방재기상관측지점(Automatic Weather System, AWS)의 분 단위 강우자료를 이용하여 집중호우를 고려한 확률강우량을 산정하였다. 또한, 유역에 적합한 Huff의 4분위 방법 산정을 위해 Case별 시간분포 산정과 유출분석을 실시하였다. 이는 집중호우와 유역특성을 반영한 설계수문량 산정에 크게 기여할 것으로 판단된다. Recently, the incidence of heavy rainfall is increasing. Therefore, a rainfall analysis should be performed considering increasing frequency. The current rainfall analysis for hydrologic design use the hourly rainfall data of ASOS with a density of 36 km on the Korean Peninsula. Therefore, medium and small scale watershed included Thiessen network at the same rainfall point are analyzed with the same design rainfall and time distribution. This causes problem that the watershed characteristics can not be considered. In addition, there is a problem that the temporal-spatial change of the heavy rainfall occurring in the range of 10~20 km can not be considered. In this study, Author estimated design rainfall considering heavy rainfall using minutely rainfall data of AWS, which are relatively dense than ASOS. Also, author analyzed the time distribution and runoff of each case to estimate the huff's method suitable for the watershed. The research result will contribute to the estimation of the design hydrologic data considering the heavy rainfall and watershed characteristics.
김민석,황창수,김홍배,Kim, Min-Seok,Hwang, Chang-Su,Kim, Hong-Bae 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.12
The SiOCH films that low dielectric interlayer dielectric materials were deposited on p-type Si(100) substrates through the dissociation of BTMSM precursors with oxygen gas by using PECVD method. BTMSM precursor was introduced with the flow rates from 42 sccm to 60 sccm by 2 sccm step in the constant flow rate of 60 sccm $O_2$. SiOCH thin films were annealed at $450^{\circ}C$ for 30 minutes. The electrical property of SiOCH thin films was studied by MIS, Al/SiOCH/p-Si(100), structure. Annealed samples showed even greater reductions of the maximum capacitance and the dielectric constant of the SiOCH samples, owing to reductions of surface charge density. we confirmed this result with derivative of C-V characteristic, leakage current density. The maximum capacitance and leakage current density were respectively decreased about 4 pF, 60% after annealing. The average of low-k value is approximatly 2.07 after annealing.