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RISS 인기검색어
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- 저자 : ( Yuheng Huang ) (검색결과 4 건)
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Selective Demodulation Scheme Based on Log-Likelihood Ratio Threshold
( Yuheng Huang ),( Yan Dong ),( Minho Jo ),( Yingzhuang Liu ) 한국인터넷정보학회 2013 KSII Transactions on Internet and Information Syst Vol.7 No.4
This paper aims at designing a selective demodulation scheme based on Log-likelihood Ratio threshold (SDLT) instead of the conventional adaptive demodulation (ADM) scheme, by using rateless codes. The major difference is that the Log-likelihood ratio (LLR) threshold is identified as a key factor to control the demodulation rate, while the ADM uses decision region set (DRS) to adjust the bit rate. In the 16-QAM SDLT scheme, we deduce the decision regions over an additive white Gaussian channel, corresponding to the variation of LLR threshold and channel states. We also derived the equations to calculate demodulation rate and bit error rate (BER), which could be proven by simulation results. We present an adaptation strategy for SDLT, and compare it with ADM and adaptive modulation (AM). The simulation results show that our scheme not only significantly outperforms the ADM in terms of BER, but also achieves a performance as good as the AM scheme. Moreover, the proposed scheme can support much more rate patterns over a wide range of channel states.
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Xueqi Guo,Yuheng Zeng,Zhi Zhang,Yuqing Huang,Mingdun Liao,Qing Yang,Zhixue Wang,Minyong Du,Denggao Guan,Baojie Yan,Jichun Ye 한국물리학회 2019 Current Applied Physics Vol.19 No.7
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ∼0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (Vbi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiOx layer. The C of depleting layer deviates from the normal linear curve in the 1/C2-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the Vbi can still be estimated. We find that the Vbi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.
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Xiufeng Liu,Wei Wei,JinChun Yuan,Yuxuan Tao,Yuheng Li,Yu Huang 한국정밀공학회 2021 International Journal of Precision Engineering and Vol.22 No.11
For the ultra-precision turning machine, the spindle system is a core component and plays a decisive role in precise machining. The unbalancing state in the spindle can degrade the quality of the machining surface. Therefore, the spindle system must be exceptionally well balanced before processing. In this paper, we proposed a high accuracy spindle balance method, which adopts the real-time data in the CNC system and combines with disturbance observer (DOB) to estimate the unbalancing vector without any extra sensors. Moreover, this method takes full advantage of the ultra-precision machine structure, the high precision grating, and the high-performance motor servo system to achieve high accuracy measurement for the spindle unbalancing. According to the experimental results, the proposed method accuracy is up to G0.0073, which is at least three levels greater than the highest official ISO balancing quality grade G0.16. In the cutting experiments, the PV value reduce to 0.207 μm from 0.528 μm with upgrading the spindle balance grade to G0.01024 from G0.16, verifies the accuracy of the spindle dynamic balancing method from the practice side.
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Zheng, Ping,Pu, Bei,Yu, Bing,He, Jun,Yu, Jie,Mao, Xiangbing,Luo, Yuheng,Luo, Junqiu,Huang, Zhiqing,Luo, Chenggui,Wang, Shaohui,Chen, Daiwen Asian Australasian Association of Animal Productio 2018 Animal Bioscience Vol.31 No.6
Objective: The objective of this experiment was to compare the effects of adding 130 mg/kg Cu from either copper sulfate (CS) or tribasic copper chloride (TBCC) on growth performance, mineral deposition in tissues, and the excretion in feces of pigs as well as changes in the mineral contents in tissues and feces when the supplemental Cu level was decreased from 130 mg/kg to 10 mg/kg. Methods: A total of 72 pigs ($32.6{\pm}1.2kg$) were randomly assigned to a CS diet or a TBCC diet with 6 pens per treatment. The trial lasted 102 d and included 3 phases (phase 1, 1 to 30 d; phase 2, 31 to 81 d; and phase 3, 82 to 102 d). The supplemental levels of Cu in the 2 treatments were 130 mg/kg in phase 1 and 2 and 10 mg/kg in phase 3. Results: The results showed that pigs fed the CS diet tended to have higher average daily gain than pigs fed the TBCC diet during d 1 to 81 (p<0.10). Compared with CS, TBCC increased the activities of aspartate transaminase (AST), ceruloplasmin, and superoxide dismutase in serum on d 30 (p<0.05). The TBCC decreased the Cu level in the liver on d 81 (p<0.05) and increased the Mn level in the liver on d 102 (p<0.05). The concentration of Cu in feces sharply decreased when the supplemental Cu level in diet changed from 130 mg/kg to 10 mg/kg in both diets (p<0.05). Conclusion: The result suggested that TBCC and CS had no significant difference on growth performance but TBCC had higher activities of AST and antioxidant enzymes and lower liver Cu than CS when pigs fed diets with 130 mg Cu /kg diet.
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