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Zhixue Li,Zhun Ma,Yuting Xu,Xiaomeng Wang,Yongchao Sun,Rong Wang,Jian Wang,Xueli Gao,Jun Gao 한국화학공학회 2018 Korean Journal of Chemical Engineering Vol.35 No.8
Ion exchange membranes (IEMs) composed of sulfonated poly (ether sulfone) (SPES) and N-phthaloyl chitosan (NPHCs) were synthesized. NPHCs was employed in membrane fabrication to improve the porosity and hydrophilicity of membranes. The effect of blend ratio of sulfonation (DS) and NPHCs content on physico-chemical characteristics of home-made membranes was investigated. The morphology of prepared membranes was investigated by Fourier transform infrared spectroscopy (FTIR), X-ray diffractometer (XRD) and scanning electron microscopy (SEM). SEM images revealed the formation of a more porous membrane structure and smoother surface. The electrochemical and physical properties of CEMs were characterized comprising water content, contact angle, ion exchange capacity (IEC) and thermal stability. Membrane water content, surface hydrophilicity and IEC were enhanced with increase of DS and NPHCs blend ratios in casting solution. Furthermore, the diffusion coefficient was also improved slightly with increase of DS and NPHCs blend ratios in prepared membranes. Membrane potential, permselectivity, transport number and areal membrane resistance all showed decreasing trends by the increase in NPHCs blend ratio in casting solution. These results indicated that the prepared membrane has good prospective and great potential for desalination in electrodialysis applications.
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Xueqi Guo,Yuheng Zeng,Zhi Zhang,Yuqing Huang,Mingdun Liao,Qing Yang,Zhixue Wang,Minyong Du,Denggao Guan,Baojie Yan,Jichun Ye 한국물리학회 2019 Current Applied Physics Vol.19 No.7
The junction properties of tunnel silicon oxide (SiOx) passivated contact (TOPCon) with n-type poly-Si on p-type c-Si wafer are characterized using current-voltage (J-V) and capacitance-voltage (C-V) measurements. The dark J-V curves show a standard diode characteristic with a turn-on voltage of ∼0.63 V, indicating a p-n junction is formed. While the C-V curve displays an irregular shape with features of 1) a slow C increase with the decrease of the magnitude of reverse bias voltage, being used to estimate the built-in potential (Vbi), 2) a significant increase at a given positive bias voltage, corresponding to the geometric capacitance crossing the ultrathin SiOx, and 3) a sharp decrease to negative values, resulting from the charge tunneling through the SiOx layer. The C of depleting layer deviates from the normal linear curve in the 1/C2-V plot, which is caused by the diffusion of P dopants from the n-type poly-Si into the p-type c-Si wafer as confirmed by the electrochemical capacitance-voltage measurements. However, the 1/C2+γ-V plots with γ > 0 leads to linear curves with a proper γ and the Vbi can still be estimated. We find that the Vbi is the range of 0.75–0.85 V, increases with the increase of the doping ratio during the poly-Si fabrication process, and correlates with the passivation quality as measured by the reverse saturated current and implied open circuit voltage extracted from transient photoconductivity decay.
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